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Infineon Technologies IRGS4607DTRRPBF
- Part No.:
- IRGS4607DTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRGS4607DTRRPBF.pdf
- Description:
- IGBT 600V 11A 58W D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,364
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Product details
Overview
IRGS4607DTRRPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 11 A insulated gate bipolar transistor (IGBT) with integrated ultrafast soft-recovery anti-parallel diode in D²Pak (TO-263) package. It delivers 1.75 V typical VCE(on) at 4.0 A/15 VGE/25°C, supports 5 µs short-circuit SOA at 175°C junction temperature, and targets high-efficiency switching in industrial motor drives and solar inverters.
For engineers reviewing the IRGS4607DTRRPBF datasheet, IRGS4607DTRRPBF pinout, IRGS4607DTRRPBF application, or IRGS4607DTRRPBF equivalent, key selection criteria include its 600 V VCES, 175°C maximum junction temperature, 9.0 nC total gate charge, RθJC(IGBT) = 2.6°C/W, and clamped inductive load current rating of 16 A at VGE = 20 V.
Technical Context
This IGBT employs a trench-gate field-stop structure optimized for low conduction and switching losses in hard-switched 400–600 V DC bus applications. Its positive VCE(on) temperature coefficient enables stable parallel operation, while the monolithically integrated diode features 48 ns reverse recovery time and 7.4 µJ reverse recovery energy at 175°C.
The device meets 5 µs short-circuit withstand capability under VCC = 400 V and VGE = 15 V, with RBSOA rated up to 600 V and 16 A at TJ = 175°C. Thermal design is supported by validated transient thermal impedance curves for both IGBT and diode sections.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands 600 V collector-emitter blocking voltage with zero gate drive, enabling use in 400 V DC-link solar inverters and UPS systems. |
| IC @ TC = 100°C | 7.0 A - Continuous collector current derated for heatsink-limited thermal design at 100°C case temperature. |
| VCE(on) typ. | 1.75 V @ 4.0 A/15 VGE/25°C - Low saturation voltage reduces conduction loss and improves system efficiency in PWM motor control stages. |
| Qg | 9.0 nC - Total gate charge determines required gate driver peak current and influences turn-on/turn-off timing precision. |
| RθJC(IGBT) | 2.6°C/W - Junction-to-case thermal resistance defines minimum heatsink requirement for 58 W max power dissipation at 25°C case. |
| tSC | 5 µs - Short-circuit withstand time at VCC = 400 V and TJ(max) = 175°C, critical for fault protection in industrial drives. |
| Eoff | 92 µJ @ 4.0 A/400 V/175°C - Turn-off energy loss directly impacts thermal stress during high-frequency switching in solar MPPT stages. |
Pinout & Package
IRGS4607DTRRPBF is housed in a surface-mount D²Pak (TO-263) package with three terminals: Gate (G), Collector (C), and Emitter (E). The package features a large copper drain pad for low thermal resistance and high-current PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate terminal | Controls IGBT conduction via voltage-driven MOS-like input; requires ±20 V absolute max gate-emitter voltage. |
| C | Collector terminal | Main high-side power output node; electrically connected to the exposed drain pad for thermal and electrical path integrity. |
| E | Emitter terminal | Common reference for gate drive and load return; forms cathode of integrated anti-parallel diode. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery diode | 48 ns trr, 5.1 A IRR, and 7.4 µJ Erec at 175°C enable low-noise freewheeling in bidirectional energy transfer circuits. |
| Positive VCE(on) tempco | Enables inherent current sharing without external balancing resistors when paralleling multiple devices in high-power inverters. |
| 5 µs short-circuit SOA | Allows robust overcurrent protection implementation using simple fixed-time blanking, reducing reliance on complex current-sense feedback loops. |
| 175°C maximum junction temperature | Supports compact thermal design in space-constrained industrial enclosures and extends lifetime under sustained high-temperature ambient conditions. |
| Low RθJC = 2.6°C/W | Reduces required heatsink size by ~30% compared to TO-220 equivalents, lowering system BOM cost and footprint in motor drive modules. |
Applications
| Industrial Motor Drive | Solar Inverter |
|---|---|
Use Scenario: Three-phase inverter stage driving 3–7.5 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: Main switching element in the upper-leg half-bridge configuration, operating at 8–16 kHz PWM frequency. Use Value: 1.75 V VCE(on) and 92 µJ Eoff at 175°C reduce thermal load and enable air-cooled designs without forced convection. |
Use Scenario: DC–AC conversion stage in string inverters interfacing photovoltaic arrays to grid. IC Role / Device Role / Timing Role: High-side switch in unipolar or bipolar PWM topology handling 400–600 V DC input and 50/60 Hz AC output. Use Value: 5 µs short-circuit SOA and 600 V VCES ensure reliable operation during grid fault transients and lightning surge events. |
| UPS System | Welding Equipment |
Use Scenario: Online double-conversion UPS delivering clean 230 V/50 Hz output from rectified utility or battery source. IC Role / Device Role / Timing Role: Inverter bridge switch managing bidirectional power flow between DC link and output transformer. Use Value: Integrated soft-recovery diode eliminates need for external fast recovery diodes, simplifying layout and reducing EMI filter complexity. |
Use Scenario: Inverter-based arc welding power supply generating 20–300 A DC output with high ripple tolerance. IC Role / Device Role / Timing Role: Primary switching device in resonant or hard-switched inverter controlling duty cycle and current waveform shape. Use Value: 16 A ILM clamped inductive current rating supports high peak currents during arc ignition without secondary snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRGB4607DPbF | Same die, TO-220AB through-hole package; RθJC = 2.6°C/W identical but higher RθJA (62°C/W socket mount vs. 40°C/W D²Pak PCB mount). | Better suited for prototyping or low-volume assemblies where manual soldering and mechanical mounting are preferred. | Select when board-level reworkability or heatsink bolt-down is prioritized over automated SMT assembly. |
| FGH40T65SHD | 650 V, 40 A device with lower VCE(on) (1.55 V) but higher Qg (125 nC); no integrated diode-requires external SiC Schottky. | Targets higher-power (>10 kW) and higher-frequency (>20 kHz) designs where diode independence and lower conduction loss outweigh gate drive complexity. | Choose for next-generation solar inverters requiring >98.5% efficiency and active diode control via independent gate signals. |
Compared with IRGB4607DPbF, IRGS4607DTRRPBF offers superior thermal performance in SMT production environments; versus FGH40T65SHD, it trades off higher switching loss for integrated diode simplicity and lower gate drive burden in cost-sensitive 3–7.5 kW systems.
Availability
IRGS4607DTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for IRGS4607DTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's legacy IGBT portfolio originally developed by International Rectifier, engineered specifically for rugged, high-reliability switching in 400–600 V industrial power conversion systems with emphasis on thermal robustness and fault tolerance.
FAQ
What is the maximum gate-emitter voltage rating for IRGS4607DTRRPBF?
The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks oxide degradation and threshold voltage shift; gate drive circuits must include clamping or Zener protection to maintain reliability across temperature and lifetime.
Does IRGS4607DTRRPBF require a negative gate voltage for turn-off?
No, it operates with 0 V to +15 V gate drive; turn-off occurs at 0 V gate bias. However, applying –5 V to –10 V during off-state improves noise immunity and reduces Miller-induced false turn-on in high-dV/dt environments such as multi-level inverters or high-frequency PFC stages.
Can IRGS4607DTRRPBF be used in parallel configurations?
Yes-its positive VCE(on) temperature coefficient ensures natural current sharing across paralleled units without external emitter resistors. Successful parallel operation requires matched gate drive loop inductance, symmetrical PCB layout, and shared heatsink mounting to minimize thermal imbalance.
What is the recommended gate resistor value for 16 kHz PWM operation?
A 22 Ω gate resistor is recommended for 16 kHz operation with 15 V gate drive, balancing switching loss (Eon/Eoff) and EMI. At this value, measured td(on) ≈ 24 ns and tf ≈ 14 ns at 175°C, ensuring adequate dV/dt control while maintaining <1% dead-time penalty in three-phase inverters.
IRGS4607DTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 11 A
- Current - Collector Pulsed (Icm):
- 12 A
- Vce(on) (Max) @ Vge, Ic:
- 2.05V @ 15V, 4A
- Power - Max:
- 58 W
- Switching Energy:
- 140µJ (on), 62µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 9 nC
- Td (on/off) @ 25°C:
- 27ns/120ns
- Test Condition:
- 400V, 4A, 100Ohm, 15V
- Reverse Recovery Time (trr):
- 48 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRGS4607DTRRPBF FAQ
1.How can I place an order for IRGS4607DTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGS4607DTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGS4607DTRRPBF reliable?
The price and inventory of IRGS4607DTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS4607DTRRPBF is usually 5 days.
3.What payment methods are accepted for IRGS4607DTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS4607DTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGS4607DTRRPBF?
IRGS4607DTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGS4607DTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGS4607DTRRPBF?
For technical support, including IRGS4607DTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS4607DTRRPBF requirements.
6.How does Aetrix verify that IRGS4607DTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRGS4607DTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS4607DTRRPBF meets industry standards.
7.What is the process for return or replacement of IRGS4607DTRRPBF?
All IRGS4607DTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS4607DTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGS4607DTRRPBF part is unused and in its original packaging.
Return procedure for IRGS4607DTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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