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Infineon Technologies IRGS4630DPBF

Part No.:
IRGS4630DPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRGS4630DPBF.pdf
Description:
IGBT 600V 47A 206W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,080

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Product details

Overview

IRGS4630DPBF from Infineon Technologies is a 600 V, 30 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in D2Pak (TO-263) package. It delivers 1.65 V typical VCE(on) at 18 A/15 VGE/25°C, supports 5 µs short-circuit SOA, and operates up to 175°C junction temperature-designed for high-efficiency industrial motor drives and UPS inverters.

For engineers reviewing the IRGS4630DPBF datasheet, IRGS4630DPBF pinout, IRGS4630DPBF application, or IRGS4630DPBF equivalent, this device is selected for rugged hard-switching performance, parallel-current-sharing capability via positive VCE(on) temperature coefficient, and low switching losses (Etotal = 445 µJ @ 25°C, 855 µJ @ 175°C) in medium-power 400 V DC bus systems.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling low conduction loss and fast switching with soft diode recovery. Its square RBSOA at 175°C and 5 µs short-circuit withstand time support robust protection schemes in unidirectional power conversion stages.

The integrated diode exhibits 2.3 V typical VF at 18 A/25°C and 100 ns trr, with Erec = 260 µJ at 175°C-optimized for reduced voltage overshoot and EMI in clamped-inductive loads like motor phase legs and welder output stages.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands full 400 V DC bus with 50% safety margin for surge and commutation spikes.
IC @ TC = 100°C 30 A - Sustains continuous motor-phase current in forced-air-cooled 3–5 kW inverters.
VCE(on) typ. 1.65 V @ 18 A/15 VGE/25°C - Enables <1.2 W conduction loss per device at rated load, reducing heatsink requirements.
tSC ≥5 µs - Allows reliable detection and shutdown during fault events without desaturation circuit complexity.
RθJC (IGBT) 0.73 °C/W - Supports 103 W power dissipation at TC = 100°C, matching standard D2Pak thermal interface practices.
Eoff @ 175°C 570 µJ - Defines turn-off energy budget for gate driver sizing and snubber design in high-temp operation.
Qg 35 nC - Determines minimum gate driver peak current (≥1.6 A @ 22 Ω, 15 V) for 100 ns switching transitions.

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated mounting tab; thermally optimized for PCB copper pour attachment and mechanical stability in high-vibration environments.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls IGBT conduction; requires ±20 V absolute max rating and 35 nC total charge for full enhancement.
2 (C) Collector Main high-side power terminal; electrically tied to heatsink tab; carries full load current and switching transients.
3 (E) Emitter Low-side reference for gate drive and current sensing; shared emitter node enables single-shunt feedback in 3-phase bridges.

Key Features

Feature Design Value
Ultrafast soft-recovery diode 100 ns trr, 23 A Irr, 260 µJ Erec - Minimizes voltage spike and ringing during freewheeling in motor drives.
Square RBSOA at 175°C Rated for 72 A clamped inductive load at VCC = 480 V - Enables reliable operation under overcurrent and transient overload conditions.
Positive VCE(on) tempco +0.4 mV/°C shift - Ensures natural current sharing when paralleling multiple devices without external ballasting resistors.
5 µs short-circuit SOA Validated at VCC = 400 V, VGE = +15 V → 0 V - Permits deterministic fault response using simple RC timing or digital comparator circuits.

Applications

Industrial Motor Drive Inverter Systems

Use Scenario: 3-phase variable-frequency drive for HVAC compressors and conveyor belts operating at 4 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switch in 600 V DC-link half-bridge leg, handling 18 A RMS motor phase current with 5 µs fault tolerance.

Use Value: Low VCE(on) reduces conduction loss by 18% vs. legacy 650 V IGBTs, enabling smaller heatsinks and lower system cost.

Use Scenario: Grid-tied solar inverter DC/AC stage with unidirectional power flow and active anti-islanding protection.

IC Role / Device Role / Timing Role: Main switching element in NPC or T-type inverter topology, leveraging integrated diode for bidirectional freewheeling paths.

Use Value: Soft diode recovery limits dv/dt stress on PV-side capacitors and reduces EMI filter size by 30%.

Uninterruptible Power Supply Industrial Welding Equipment

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 380–400 V DC bus with 10 ms transfer time.

IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-to-AC conversion under dynamic load steps up to 200% rated current.

Use Value: 175°C max junction temperature allows derating-free operation in sealed enclosures with ambient up to 70°C.

Use Scenario: IGBT-based inverter welder output stage delivering 200–300 A DC welding current with rapid arc re-ignition.

IC Role / Device Role / Timing Role: Primary power switch in resonant or hard-switched DC output stage, handling pulsed 72 A clamped inductive loads.

Use Value: Square RBSOA ensures no second-breakdown failure during repeated short-circuit events during arc striking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP30NC60WD 600 V/30 A TO-247; VCE(on) = 1.8 V @ 15 A; tSC = 10 µs; integrated diode trr = 120 ns Higher VCE(on) increases conduction loss by ~9%; longer tSC eases protection design but requires larger gate driver due to 65 nC Qg Preferred where extended short-circuit immunity outweighs efficiency loss and board space is not constrained.
IXYS IXGN30N60B3 600 V/30 A TO-247; VCE(on) = 1.7 V @ 15 A; tSC = 3 µs; no integrated diode Lacks monolithic diode-requires external ultrafast diode; tighter tSC demands faster fault detection; lower Qg = 28 nC eases gate drive Selected when discrete diode selection is needed for custom recovery tuning or when gate drive power budget is critical.

Compared with STGP30NC60WD and IXGN30N60B3, IRGS4630DPBF offers the lowest conduction loss and integrated soft diode in D2Pak form factor-ideal for space-constrained, thermally demanding motor drive PCBs where thermal resistance and layout simplicity are prioritized over maximum short-circuit margin or gate drive efficiency.

Availability

IRGS4630DPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply across multi-year production cycles.

Supply support for IRGS4630DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's StrongIRFET™ IGBT family, engineered for high-reliability medium-power switching in harsh thermal and electrical environments-targeting motor control, UPS, and welding applications demanding ruggedness and predictable safe-operating-area behavior.

FAQ

What is the maximum gate-emitter voltage rating for IRGS4630DPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks oxide degradation and threshold voltage shift; gate drivers must clamp to this limit using Zener diodes or active regulation.

Can IRGS4630DPBF be paralleled for higher current capacity?

Yes-its positive VCE(on) temperature coefficient (−18 mV/°C) ensures natural current sharing across devices. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and common-source emitter routing to minimize loop inductance imbalance.

What thermal interface material is recommended for D2Pak mounting?

A thermally conductive, electrically insulating grease (e.g., Dow Corning TC-5623) or phase-change pad (e.g., Laird TPCM 600) is recommended. Minimum thermal resistance target is 0.5 °C/W case-to-sink, verified using 1.1 N·m mounting torque on M3 screws per JEDEC standards.

Does the integrated diode support reverse conduction in bidirectional topologies?

No-the diode is unidirectional and optimized for forward freewheeling only. It lacks reverse conduction capability required for true bidirectional switching (e.g., matrix converters); use in H-bridge configurations requires external anti-parallel diodes for regenerative braking paths.

IRGS4630DPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
47 A
Current - Collector Pulsed (Icm):
54 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 18A
Power - Max:
206 W
Switching Energy:
95µJ (on), 350µJ (off)
Input Type:
Standard
Gate Charge:
35 nC
Td (on/off) @ 25°C:
40ns/105ns
Test Condition:
400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr):
100 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRGS4630DPBF FAQ

1.How can I place an order for IRGS4630DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS4630DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS4630DPBF reliable?

The price and inventory of IRGS4630DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS4630DPBF is usually 5 days.

3.What payment methods are accepted for IRGS4630DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS4630DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS4630DPBF?

IRGS4630DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS4630DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS4630DPBF?

For technical support, including IRGS4630DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS4630DPBF requirements.

6.How does Aetrix verify that IRGS4630DPBF is sourced from the original manufacturer or authorized distributors?

All IRGS4630DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS4630DPBF meets industry standards.

7.What is the process for return or replacement of IRGS4630DPBF?

All IRGS4630DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS4630DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS4630DPBF part is unused and in its original packaging.

Return procedure for IRGS4630DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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