Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRGS4630DTRLPBF

Part No.:
IRGS4630DTRLPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRGS4630DTRLPBF.pdf
Description:
IGBT 600V 47A 206W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,678

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRGS4630DTRLPBF from Infineon Technologies is a 600 V, 30 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in D2Pak (TO-263) package, rated for tSC ≥ 5 µs short-circuit withstand time and maximum junction temperature of 175°C; used in industrial motor drives, UPS inverters, and welding power stages.

For engineers reviewing the IRGS4630DTRLPBF datasheet, IRGS4630DTRLPBF pinout, IRGS4630DTRLPBF application, or IRGS4630DTRLPBF equivalent, key selection criteria include VCE(on) = 1.65 V @ 18 A, RθJC(IGBT) = 0.73 °C/W, square RBSOA at 175°C, 5 µs SC-SOA compliance, and integrated diode reverse recovery energy Erec = 260 µJ @ TJ = 175°C.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for hard-switching applications up to 20 kHz, featuring positive VCE(on) temperature coefficient and tight parameter distribution to support parallel operation without current-sharing resistors. Its integrated diode exhibits soft reverse recovery with trr = 100 ns and Irr = 23 A under specified test conditions.

The device is characterized across -40°C to +175°C junction temperature range, with validated RBSOA up to 72 A at VCC = 480 V and SCSOA confirmed for 5.0 µs at VCC = 400 V, RG = 22 Ω, and VGE = +15 V to 0 V transition.

Key Specifications

Parameter Value and Actual Design Meaning
VCES 600 V - Withstands DC bus voltages up to 480 V in 3-phase inverter topologies with 20% margin.
IC @ TC = 100°C 30 A - Continuous output current capability at heatsink temperature of 100°C, defining thermal design envelope.
VCE(on) 1.65 V typ. @ 18 A - Low conduction loss enabling >98% efficiency in 10–20 kHz motor drive stages.
tSC ≥5 µs - Enables robust hardware-based short-circuit protection using fixed-time blanking without external sensing.
RθJC (IGBT) 0.73 °C/W - Junction-to-case thermal resistance for D2Pak package, directly determining heatsink sizing for 103 W dissipation at TC = 100°C.
Erec 260 µJ @ TJ = 175°C - Diode reverse recovery energy limiting snubber design and EMI filtering requirements.
Qg 35 nC - Total gate charge defining driver peak current requirement (≥1.6 A for 22 Ω gate resistor, 15 V swing).

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated mounting tab; thermally enhanced copper leadframe and molded epoxy body compliant with IPC/JEDEC J-STD-020 moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal requiring ±20 V absolute max rating; 35 nC total charge necessitates low-impedance driver path.
2 (C) Collector Main high-side power terminal; electrically connected to exposed tab-requires isolation from heatsink unless system ground referenced.
3 (E) Emitter Power return and gate reference node; low-inductance layout critical to suppress Miller-induced turn-on during switching.

Key Features

Feature Design Value
Square RBSOA at 175°C Supports 72 A clamped inductive load at VCC = 480 V without secondary breakdown, enabling rugged hard-switching in welder primary stages.
Integrated ultrafast soft-recovery diode trr = 100 ns, Erec = 260 µJ @ TJ = 175°C - Reduces diode-related switching losses and EMI vs. discrete diode solutions.
Positive VCE(on) tempco Enables stable current sharing in paralleled configurations without external emitter resistors or active balancing circuits.
5 µs short-circuit SOA Allows implementation of fixed-timing fault response in microcontroller-based gate drivers without current-sense feedback loop latency.
Lead-free, RoHS-compliant construction Meets JEDEC J-STD-020 MSL Level 1 reflow profile; compatible with standard Pb-free PCB assembly processes.

Applications

Industrial Motor Drive Uninterruptible Power Supply (UPS)

Use Scenario: 3-phase inverter stage in 5–15 kW HVAC compressors and pump drives operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch with integrated freewheeling diode in six-pack topology; handles 30 A RMS motor phase current.

Use Value: Low VCE(on) and soft diode recovery reduce conduction and switching losses, improving system efficiency by ≥1.2% versus prior-generation 600 V IGBTs.

Use Scenario: DC-AC inverter stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave output under battery backup.

IC Role / Device Role / Timing Role: Output bridge switch managing bidirectional power flow between battery bank and AC grid interface.

Use Value: 5 µs SCSOA enables deterministic overcurrent shutdown during islanding events, meeting UL 1741 SA anti-islanding timing requirements.

Induction Welding Equipment Renewable Energy Inverters

Use Scenario: Primary-side switching in medium-frequency (20–50 kHz) resonant inverter for resistance spot welding power supplies.

IC Role / Device Role / Timing Role: Hard-switched main switch handling pulsed 72 A clamped inductive loads with <100 ns switching transitions.

Use Value: Square RBSOA and 175°C max junction temperature allow sustained 100% duty-cycle operation during weld cycles without derating.

Use Scenario: String-level DC-AC conversion in commercial solar PV inverters with MPPT tracking and reactive power support.

IC Role / Device Role / Timing Role: IGBT in three-level NPC or T-type inverter leg, switching at 12–18 kHz with 600 V DC link.

Use Value: Tight VGE(th) distribution (4.0–6.5 V) ensures consistent turn-on timing across parallel devices, minimizing circulating currents in multi-string designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN60N60B3 Higher VCE(on) = 2.2 V @ 30 A; lower Qg = 28 nC; TO-247 package only. Requires larger heatsink due to higher conduction loss; unsuitable for D2Pak footprint-limited designs. Select when gate drive power budget is constrained and board space allows TO-247 mounting.
STMicroelectronics STGW40H65DFB Same D2Pak package; lower IC = 20 A @ TC = 100°C; tSC = 3 µs; integrated diode trr = 120 ns. Limited to ≤7.5 kW motor drives; requires tighter short-circuit detection timing. Select when cost sensitivity outweighs power density requirements and thermal margin is available.

Compared with IXGN60N60B3 and STGW40H65DFB, IRGS4630DTRLPBF delivers optimal balance of low conduction loss, D2Pak form factor, and 5 µs short-circuit ruggedness-making it preferred for space-constrained industrial inverters requiring both efficiency and fault tolerance.

Availability

IRGS4630DTRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and induction welding equipment requiring stable component supply and long-term production continuity.

Supply support for IRGS4630DTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's "High Voltage IGBTs" product line, engineered specifically for industrial switching applications demanding high ruggedness, thermal stability, and integrated diode performance in compact packages.

FAQ

What is the maximum gate-emitter voltage rating for IRGS4630DTRLPBF?

The absolute maximum continuous gate-to-emitter voltage is ±20 V, with transient rating up to ±30 V for ≤100 ns pulses. Exceeding ±20 V continuously risks oxide degradation and threshold voltage shift; gate driver designs must include clamping or Zener protection to maintain reliability over lifetime.

Does IRGS4630DTRLPBF require an external freewheeling diode?

No. It integrates an ultrafast soft-recovery diode rated for IF = 30 A @ TC = 25°C and IF = 18 A @ TC = 100°C. The diode's trr = 100 ns and Erec = 260 µJ @ TJ = 175°C are fully characterized and validated for use in standard inverter freewheeling paths without supplemental diodes.

How is thermal resistance defined for the D2Pak package?

RθJC(IGBT) = 0.73 °C/W is measured from junction to case (exposed tab) under standardized conditions per JESD51-1, with case temperature monitored at the center of the tab. This value applies only when the tab is mounted to a flat, greased heatsink-no additional thermal interface material thickness or contact resistance is included.

Can IRGS4630DTRLPBF be paralleled for higher current capacity?

Yes. Its positive VCE(on) temperature coefficient and tight VGE(th) distribution (4.0–6.5 V) enable stable current sharing across parallel devices without emitter resistors. Layout symmetry, matched gate drive impedance, and shared heatsink mounting are required to achieve ≤10% current imbalance at full load.

IRGS4630DTRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
47 A
Current - Collector Pulsed (Icm):
54 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 18A
Power - Max:
206 W
Switching Energy:
95µJ (on), 350µJ (off)
Input Type:
Standard
Gate Charge:
35 nC
Td (on/off) @ 25°C:
40ns/105ns
Test Condition:
400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr):
100 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRGS4630DTRLPBF FAQ

1.How can I place an order for IRGS4630DTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS4630DTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS4630DTRLPBF reliable?

The price and inventory of IRGS4630DTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS4630DTRLPBF is usually 5 days.

3.What payment methods are accepted for IRGS4630DTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS4630DTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS4630DTRLPBF?

IRGS4630DTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS4630DTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS4630DTRLPBF?

For technical support, including IRGS4630DTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS4630DTRLPBF requirements.

6.How does Aetrix verify that IRGS4630DTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRGS4630DTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS4630DTRLPBF meets industry standards.

7.What is the process for return or replacement of IRGS4630DTRLPBF?

All IRGS4630DTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS4630DTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS4630DTRLPBF part is unused and in its original packaging.

Return procedure for IRGS4630DTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGS4630DTRLPBF Tags

  • IRGS4630DTRLPBF
  • IRGS4630DTRLPBF PDF
  • IRGS4630DTRLPBF Datasheet
  • IRGS4630DTRLPBF Specifications
  • IRGS4630DTRLPBF Images
  • Infineon Technologies
  • Infineon Technologies IRGS4630DTRLPBF
  • Buy IRGS4630DTRLPBF
  • IRGS4630DTRLPBF Price
  • IRGS4630DTRLPBF Distributor
  • IRGS4630DTRLPBF Supplier
  • IRGS4630DTRLPBF Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER