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Infineon Technologies IRGS4630DTRRPBF

Part No.:
IRGS4630DTRRPBF
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRGS4630DTRRPBF.pdf
Description:
IGBT 600V 47A 206W D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,488

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Product details

Overview

IRGS4630DTRRPBF from Infineon Technologies is a 600 V, 30 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery diode in D2Pak (TO-263) package, rated for tSC ≥ 5 µs short-circuit withstand time and maximum junction temperature of 175°C; used in industrial motor drives, UPS inverters, and welding power stages.

For engineers reviewing the IRGS4630DTRRPBF datasheet, IRGS4630DTRRPBF pinout, IRGS4630DTRRPBF application, or IRGS4630DTRRPBF equivalent, key selection criteria include VCE(on) = 1.65 V (typ.) at 18 A/15 V, RθJC(IGBT) = 0.73 °C/W, square RBSOA up to 72 A, 35 nC total gate charge, and integrated diode with 100 ns reverse recovery time at 175°C.

Technical Context

This IGBT employs a trench-gate field-stop structure enabling low conduction loss and robust switching performance under hard-switching conditions. Its positive VCE(on) temperature coefficient ensures stable current sharing in parallel configurations, while the monolithically integrated diode features soft recovery with Erec = 260 µJ and IRR = 23 A at 175°C.

The device supports gate drive voltages from ±20 V, exhibits tight VGE(th) distribution (4.0–6.5 V), and delivers full square RBSOA up to 72 A at VCC = 480 V with VGE = +20 V to 0 V. Short-circuit capability is validated for 5.0 µs at VCC = 400 V and VGE = +15 V to 0 V.

Key Specifications

Parameter Value and Actual Design Meaning
VCES600 V - Withstands DC bus voltage up to 600 V without breakdown.
IC @ TC = 100°C30 A - Continuous output current capability at practical heatsink temperatures.
VCE(on) typ.1.65 V @ 18 A/15 V - Low saturation voltage reduces conduction loss and thermal stress.
tSC≥ 5 µs - Enables reliable hardware-based short-circuit protection in inverter legs.
RθJC (IGBT)0.73 °C/W - Enables high-power operation with moderate case-to-heatsink thermal interface resistance.
Qg35 nC - Determines gate driver peak current requirement (e.g., ~1.6 A for 22 Ω, 15 V drive).
Eoff @ 175°C570 µJ - Critical for thermal design of high-frequency switching applications above 10 kHz.

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated mounting tab; thermally optimized for PCB heatsinking via copper pour and soldered tab area.

Pin/Terminal Circuit Role Design Meaning
1 (G)GateControls IGBT turn-on/turn-off; requires ±20 V absolute max rating and 35 nC total charge.
2 (C)CollectorMain high-side power terminal; connects to DC bus (+) in half-bridge configuration.
3 (E)EmitterPower return path and gate drive reference; low-inductance layout critical for dV/dt immunity.

Key Features

Feature Design Value
Ultrafast soft-recovery diodeIntegrated anti-parallel diode with trr = 100 ns and Erec = 260 µJ at 175°C enables low EMI in freewheeling paths.
Square RBSOARated for 72 A clamped inductive load at VCC = 480 V, supporting rugged hard-switching in motor control.
Positive VCE(on) tempcoEnables stable current sharing in parallel IGBT configurations without external ballasting resistors.
175°C max junction temperatureExtends usable thermal margin in compact enclosures and high-ambient industrial environments.
Lead-free / RoHS compliantMeets global environmental regulations; compatible with standard Pb-free reflow profiles (peak 260°C).

Applications

Industrial Motor Drive Uninterruptible Power Supply (UPS)

Use Scenario: Three-phase inverter stage in 5–15 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Main switching device in each leg of a 6-pulse inverter bridge; operates at 2–8 kHz PWM frequency.

Use Value: Low VCE(on) and 5 µs short-circuit rating enable high efficiency and fault tolerance during motor stall or overload events.

Use Scenario: DC-AC inverter stage in online double-conversion UPS systems delivering clean sine-wave output.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; handles bidirectional energy flow during battery backup mode.

Use Value: Integrated soft diode eliminates need for discrete antiparallel diodes, reducing component count and reverse recovery losses by >30%.

Welding Power Source Inverter-Based Solar Charge Controller

Use Scenario: Primary switching element in IGBT-based inverter welders operating with high-current pulsed DC output.

IC Role / Device Role / Timing Role: High-current switching device in resonant or hard-switched DC link; subjected to repetitive 50–200 A peak currents.

Use Value: Square RBSOA and 175°C junction rating allow sustained operation under high thermal cycling and transient overloads.

Use Scenario: DC-DC boost stage in photovoltaic string inverters converting 200–1000 V PV input to regulated DC bus.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved boost converter; switches at 10–20 kHz with 600 V blocking requirement.

Use Value: 600 V VCES and low Qg/Eoff balance efficiency and switching speed for MPPT tracking accuracy and thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN60N60A4600 V / 60 A, TO-247, RθJC = 0.35 °C/W, tSC = 10 µs, no integrated diodeRequires external ultrafast diode; higher current rating suits larger invertersSelect when higher current headroom and superior thermal resistance are needed, and discrete diode integration is acceptable.
STMicroelectronics STGW40H65DFB650 V / 40 A, TO-247, RθJC = 0.45 °C/W, tSC = 6 µs, integrated diode with trr = 120 nsHigher voltage rating and slower diode recovery; slightly higher VCE(on) (1.85 V)Prefer for 650 V bus designs or where extended short-circuit margin outweighs conduction loss sensitivity.

Compared with IXGN60N60A4 and STGW40H65DFB, IRGS4630DTRRPBF offers optimal trade-off of low conduction loss (1.65 V), integrated soft diode, and D2Pak surface-mount compatibility-making it ideal for space-constrained, medium-power industrial inverters requiring simplified layout and proven short-circuit robustness.

Availability

IRGS4630DTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, welding equipment, and solar charge controllers requiring stable component supply across multi-year production cycles.

Supply support for IRGS4630DTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's "High Voltage IGBT" product line, engineered for rugged, high-efficiency switching in industrial inverters and power conversion systems operating up to 600 V DC bus.

FAQ

What is the recommended gate resistor value for IRGS4630DTRRPBF in a 5 kHz motor drive inverter?

A 22 Ω gate resistor is specified in the datasheet for switching characterization at 18 A and 400 V, yielding td(off) = 120 ns and Eoff = 570 µJ at 175°C. For 5 kHz operation, this value balances switching loss, dV/dt control, and gate driver thermal loading; lower values (10–15 Ω) may be used if EMI filtering and driver capability permit.

Does IRGS4630DTRRPBF require a negative gate turn-off voltage?

No. The device is rated for continuous gate-to-emitter voltage of ±20 V, but standard operation uses 0 V for turn-off. A negative turn-off voltage (e.g., –5 V) is not required for reliability or noise immunity, though it may improve dV/dt immunity in high-noise environments; the datasheet specifies safe operation with 0 V gate drive.

Can IRGS4630DTRRPBF be paralleled for higher current capacity?

Yes-its positive VCE(on) temperature coefficient and tight parameter distribution (VGE(th) = 4.0–6.5 V) enable stable current sharing. Layout must ensure matched gate loop inductance and emitter degeneration; derating to ≤25 A per device is recommended for long-term reliability at 100°C case temperature.

Is the integrated diode rated for continuous conduction in regenerative braking applications?

Yes-the diode supports IF = 18 A continuously at TC = 100°C and 30 A at TC = 25°C, with soft recovery (trr = 100 ns, Erec = 260 µJ). In regenerative braking, its performance matches typical IGBT freewheeling requirements; thermal design must account for combined IGBT + diode losses in the same die.

IRGS4630DTRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
47 A
Current - Collector Pulsed (Icm):
54 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 18A
Power - Max:
206 W
Switching Energy:
95µJ (on), 350µJ (off)
Input Type:
Standard
Gate Charge:
35 nC
Td (on/off) @ 25°C:
40ns/105ns
Test Condition:
400V, 18A, 22Ohm, 15V
Reverse Recovery Time (trr):
100 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRGS4630DTRRPBF FAQ

1.How can I place an order for IRGS4630DTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS4630DTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS4630DTRRPBF reliable?

The price and inventory of IRGS4630DTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS4630DTRRPBF is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS4630DTRRPBF transactions.

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IRGS4630DTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS4630DTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS4630DTRRPBF?

For technical support, including IRGS4630DTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS4630DTRRPBF requirements.

6.How does Aetrix verify that IRGS4630DTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRGS4630DTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS4630DTRRPBF meets industry standards.

7.What is the process for return or replacement of IRGS4630DTRRPBF?

All IRGS4630DTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS4630DTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS4630DTRRPBF part is unused and in its original packaging.

Return procedure for IRGS4630DTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRGS4630DTRRPBF Tags

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