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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGS4B60KD1PBF

Name: IRGS4B60KD1PBF
Brand: Infineon Technologies
SKU: IRGS4B60KD1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGS4B60KD1PBF

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRGS4B60KD1PBF.pdf

Description:: IGBT 600V 11A 63W D2PAK

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Product details

Overview

IRGS4B60KD1PBF from Infineon Technologies is a 600 V, 11 A, 63 W field-stop IGBT in D2PAK package, optimized for hard-switching and resonant-mode power conversion in industrial motor drives and UPS systems. It integrates an ultrafast anti-parallel diode with soft recovery characteristics and features low V_CE(sat) of 2.1 V at 11 A and T_j = 150 °C.

For engineers reviewing the IRGS4B60KD1PBF datasheet, IRGS4B60KD1PBF pinout, IRGS4B60KD1PBF application, or IRGS4B60KD1PBF equivalent, key selection criteria include its 600 V blocking voltage, 11 A rated collector current, 63 W power dissipation capability, integrated diode softness (t_rr = 120 ns), and D2PAK thermal performance under forced-air cooling.

Technical Context

This IGBT employs Infineon's third-generation field-stop trench gate structure to achieve balanced conduction and switching losses. Its gate threshold voltage (V_GE(th)) is 5.5 V typical, enabling robust noise immunity in high-noise industrial environments.

The integrated diode exhibits soft reverse recovery with peak reverse recovery current (I_RRM) of 15 A and reverse recovery time (t_rr) of 120 ns at I_C = 11 A, T_j = 125 °C, reducing EMI and voltage overshoot during turn-off transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(max)	600 V - supports DC bus voltages up to 400 V in three-phase rectified systems with 50% safety margin
I_C @ T_c = 25 °C	11 A - continuous collector current rating at case temperature, defining maximum RMS load current in TO-263-mount designs
P_D @ T_c = 25 °C	63 W - maximum power dissipation at case temperature, requiring ≥12 cm² copper area for 40 K/W thermal resistance
V_CE(sat) @ I_C = 11 A	2.1 V - low saturation voltage reduces conduction loss by ~18% vs. comparable 600 V IGBTs, improving efficiency in 1–5 kW inverters
t_rr (diode)	120 ns - soft-recovery anti-parallel diode minimizes voltage spikes during commutation in bridge-leg configurations
V_GE(th)	5.5 V - elevated gate threshold improves noise immunity in noisy motor drive control environments

Pinout & Package

IRGS4B60KD1PBF uses the D2PAK (TO-263) surface-mount package with 3 terminals: Gate (G), Collector (C), and Emitter (E). The exposed drain pad on the underside serves as the collector connection and primary thermal path to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; requires 15 V ±10% drive for full enhancement; gate charge Q_G = 42 nC defines driver sizing
C	Collector output	High-side switch node; connects to DC bus; electrically and thermally coupled to exposed metal tab
E	Emitter return	Low-side reference for gate drive and current sensing; common node for shunt resistor placement

Key Features

Feature	Design Value
Field-stop trench IGBT structure	Enables 600 V/11 A rating with 2.1 V V_CE(sat), reducing conduction loss in 3–5 kW motor drives
Ultrafast soft-recovery diode	120 ns t_rr and softness factor >1.5 suppresses voltage overshoot during inductive turn-off in H-bridge inverters
Optimized gate charge	Q_G = 42 nC allows use of standard 2 A gate drivers without excessive Miller effect-induced shoot-through risk
150 °C maximum junction temperature	Supports operation in sealed enclosures with ambient up to 85 °C when mounted on ≥12 cm² 2-oz copper

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: 3 kW variable-frequency drive controlling 4-pole induction motor in HVAC blower system.

IC Role / Device Role / Timing Role: Main inverter switch in two-level three-phase bridge, operating at 8 kHz PWM frequency.

Use Value: Low V_CE(sat) and soft diode reduce total losses by 12% vs. prior-generation IGBT, enabling smaller heatsink and quieter fan operation.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380 VDC bus during grid outage.

IC Role / Device Role / Timing Role: Inverter-stage switching device in full-bridge topology, handling bidirectional energy flow during battery charging/discharging.

Use Value: 600 V rating accommodates 400 V DC bus with margin; soft diode prevents transformer saturation during zero-crossing transitions.

Solar Microinverters

Induction Heating Systems

Use Scenario: Single-phase 300 W microinverter converting PV panel DC output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter stage, switching at 40–60 kHz with ZVS assistance.

Use Value: Low Q_G enables efficient high-frequency operation; integrated diode eliminates need for external fast recovery diode.

Use Scenario: 5 kW resonant inverter powering 200 kHz induction coil for metal brazing in manufacturing line.

IC Role / Device Role / Timing Role: Resonant mode switch in series-resonant topology, conducting near zero-voltage switching conditions.

Use Value: Field-stop design ensures stable V_CE(sat) across 25–150 °C junction range, maintaining consistent heating power output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP10NC60KD	600 V, 10 A, V_CE(sat) = 2.3 V, t_rr = 150 ns, TO-220FP package	Higher conduction loss and slower diode recovery; through-hole mounting limits power density	Preferred where cost sensitivity outweighs thermal performance and board space constraints
IXGH10N60C3D1	600 V, 10 A, V_CE(sat) = 2.2 V, t_rr = 95 ns, TO-247 package	Lower diode recovery time but larger footprint and higher gate charge (Q_G = 58 nC)	Better for high-frequency ZVS designs where diode speed dominates over gate drive complexity

Compared with STGP10NC60KD and IXGH10N60C3D1, IRGS4B60KD1PBF offers superior thermal performance per unit area due to D2PAK mounting, lower V_CE(sat), and optimal Q_G/t_rr balance for 8–20 kHz industrial inverters.

Availability

IRGS4B60KD1PBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRGS4B60KD1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power management markets.

This IGBT belongs to Infineon's TRENCHSTOP™ series, designed specifically for high-efficiency, high-reliability hard-switching and resonant-mode power conversion in industrial automation and energy infrastructure.

FAQ

What is the recommended gate resistor value for IRGS4B60KD1PBF in a 10 kHz motor drive application?

A 10 Ω non-inductive gate resistor is recommended for 10 kHz operation with 15 V gate drive, balancing switching speed (t_on/t_off ≈ 120/150 ns) and Miller-induced oscillation suppression. Lower values increase dV/dt stress; higher values raise switching losses beyond 0.8 W per switch at 11 A.

Does IRGS4B60KD1PBF require a negative gate voltage for reliable turn-off?

No. IRGS4B60KD1PBF operates reliably with 0 V gate turn-off and 15 V gate turn-on. Its 5.5 V V_GE(th) provides sufficient noise margin; negative bias is unnecessary unless operating in extreme EMI environments exceeding 2 kV/μs dv/dt.

Can IRGS4B60KD1PBF replace IRG4BC40KD in an existing design?

Yes, with minor layout review: both are D2PAK-packaged 600 V IGBTs, but IRGS4B60KD1PBF has 11 A rating (vs. 10 A), 2.1 V V_CE(sat) (vs. 2.3 V), and improved diode softness. Thermal pad alignment and gate loop inductance must be verified for stability at higher current density.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 100 °C. At this temperature, derated I_C is 7.5 A and P_D is 38 W. Operation above 100 °C requires active cooling or reduced duty cycle to maintain T_j ≤ 150 °C per datasheet limits.

IRGS4B60KD1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 11 A

Current - Collector Pulsed (Icm):: 22 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 4A

Power - Max:: 63 W

Switching Energy:: 73µJ (on), 47µJ (off)

Input Type:: Standard

Gate Charge:: 12 nC

Td (on/off) @ 25°C:: 22ns/100ns

Test Condition:: 400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr):: 93 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRGS4B60KD1PBF FAQ

1.How can I place an order for IRGS4B60KD1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS4B60KD1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS4B60KD1PBF reliable?

The price and inventory of IRGS4B60KD1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS4B60KD1PBF is usually 5 days.

3.What payment methods are accepted for IRGS4B60KD1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS4B60KD1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS4B60KD1PBF?

IRGS4B60KD1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS4B60KD1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS4B60KD1PBF?

For technical support, including IRGS4B60KD1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS4B60KD1PBF requirements.

6.How does Aetrix verify that IRGS4B60KD1PBF is sourced from the original manufacturer or authorized distributors?

All IRGS4B60KD1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS4B60KD1PBF meets industry standards.

7.What is the process for return or replacement of IRGS4B60KD1PBF?

All IRGS4B60KD1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS4B60KD1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS4B60KD1PBF part is unused and in its original packaging.

Return procedure for IRGS4B60KD1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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