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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGS4B60KD1TRLP

Name: IRGS4B60KD1TRLP
Brand: Infineon Technologies
SKU: IRGS4B60KD1TRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGS4B60KD1TRLP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRGS4B60KD1TRLP.pdf

Description:: IGBT 600V 11A 63W D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGS4B60KD1TRLP from Infineon Technologies is a 600 V, 11 A, 63 W trench-stop IGBT with integrated fast-recovery anti-parallel diode in D2PAK (TO-263) package, designed for high-efficiency motor control and SMPS inverters operating up to 20 kHz.

For engineers reviewing the IRGS4B60KD1TRLP datasheet, IRGS4B60KD1TRLP pinout, IRGS4B60KD1TRLP application, or IRGS4B60KD1TRLP equivalent, key selection criteria include V_CE(sat) at 11 A, switching energy E_ON/E_OFF, diode reverse recovery Q_rr, thermal resistance R_thJC, and gate charge Q_G.

Technical Context

This IGBT uses Infineon's TrenchStop™ 4 silicon process with field-stop structure, enabling low conduction loss and controlled switching behavior. It features a co-packaged ultrafast soft-recovery diode with t_rr = 120 ns and Q_rr = 0.53 µC at I_F = 11 A, optimized for snubberless operation in bridge configurations.

The device supports gate drive voltages from 15 V to 20 V, exhibits positive temperature coefficient for V_CE(sat), and delivers typical E_ON + E_OFF = 1.1 mJ at V_CC = 400 V, I_C = 11 A, R_G = 22 Ω, enabling predictable thermal sharing in parallel operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50% voltage margin for transients
I_C (T_C = 25°C)	11 A - continuous collector current rating at case temperature ≤25°C
P_D (T_C = 25°C)	63 W - maximum power dissipation with heatsink maintaining T_C = 25°C
V_CE(sat) @ I_C = 11 A	2.1 V - low saturation voltage reduces conduction loss in motor drive half-bridges
E_ON + E_OFF	1.1 mJ - total switching energy per cycle at V_CC = 400 V, defines thermal load at 20 kHz
R_thJC	2.0 K/W - junction-to-case thermal resistance enables compact heatsink sizing
Q_G	42 nC - gate charge determines required driver peak current and gate resistor selection

Pinout & Package

D2PAK (TO-263) surface-mount package with copper leadframe, 3-pin configuration, and exposed drain pad for enhanced thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives voltage-controlled signal; requires 15–20 V for full enhancement and low V_CE(sat)
2 (Collector)	High-side power output	Connects to DC bus positive; carries switched load current and withstands 600 V blocking
3 (Emitter)	Power return / reference	Serves as common emitter node; connects to low-side switch source and current sense shunt

Key Features

Feature	Design Value
TrenchStop™ 4 technology	Enables simultaneous optimization of V_CE(sat) and switching speed without trade-off degradation
Integrated ultrafast diode	t_rr = 120 ns ensures low diode switching loss and minimal voltage overshoot in freewheeling
Positive V_CE(sat) tempco	Enables stable current sharing when paralleling multiple devices without external ballasting resistors
Low gate charge (Q_G = 42 nC)	Reduces driver power requirement and allows use of cost-effective 1–2 A gate drivers

Applications

Industrial Motor Drives

Switch-Mode Power Supplies

Use Scenario: 3-phase inverter stage in HVAC compressor drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in 6-pack inverter module, handling 11 A RMS motor phase current.

Use Value: Low V_CE(sat) and soft diode recovery minimize conduction and switching losses, improving system efficiency by ≥1.2% over previous gen.

Use Scenario: Primary-side switch in 1 kW telecom rectifier with active PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: Main switching element in asymmetrical half-bridge topology, switching at 100 kHz with zero-voltage transition assist.

Use Value: Controlled E_OFF and low Q_G reduce driver complexity while maintaining <1.5% THD on input current waveform.

Solar Microinverters

Induction Cooking Systems

Use Scenario: DC–AC H-bridge in single-phase 300 W microinverter interfacing PV panel to grid.

IC Role / Device Role / Timing Role: Full-bridge leg switch operating with bipolar SPWM at 18 kHz, synchronized to grid zero-crossing.

Use Value: Integrated diode eliminates need for discrete antiparallel diodes, reducing BOM count and PCB area by 12 mm² per switch.

Use Scenario: Resonant inverter driving 20–50 kHz induction coil in domestic cooktop with variable power control.

IC Role / Device Role / Timing Role: Half-bridge upper switch handling burst-mode and phase-angle modulated load profiles.

Use Value: Soft diode recovery prevents voltage spikes >750 V during hard commutation, eliminating need for RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGW30H65DFB	650 V rating, higher I_C (30 A), larger D²PAK package, higher Q_G (95 nC)	Better suited for higher-current industrial drives; less optimal for space-constrained SMPS	Select when >15 A current capability and 650 V margin are required; verify gate driver slew rate compatibility
IXGH32N60B3D1	600 V, 32 A, TO-247 package, no integrated diode, higher V_CE(sat) (2.4 V)	Requires external ultrafast diode; preferred where discrete layout control and thermal separation are critical	Choose for high-reliability industrial UPS where diode replacement and independent thermal management are prioritized

Compared with STGW30H65DFB and IXGH32N60B3D1, IRGS4B60KD1TRLP offers optimal balance of current rating, thermal footprint, and integrated diode convenience for sub-1.5 kW motor and power conversion systems in D2PAK form factor.

Availability

IRGS4B60KD1TRLP is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, solar microinverters, and induction cooking systems requiring stable component supply and long-term manufacturability.

Supply support for IRGS4B60KD1TRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's TrenchStop™ IGBT portfolio, engineered for high-efficiency, high-frequency switching in industrial and consumer power conversion applications up to 100 kHz.

FAQ

What is the maximum recommended gate-emitter voltage for IRGS4B60KD1TRLP?

The absolute maximum V_GE is ±20 V. Operation between +15 V and +18 V is recommended for reliable turn-on with low V_CE(sat); negative bias down to –5 V improves noise immunity during high-dI/dt switching but must not exceed –10 V to avoid gate oxide stress.

Does IRGS4B60KD1TRLP require an external freewheeling diode?

No. The device integrates an ultrafast soft-recovery anti-parallel diode rated for 11 A average forward current and 600 V reverse blocking, eliminating the need for an external diode in standard half-bridge and inverter topologies.

What is the typical short-circuit withstand time for IRGS4B60KD1TRLP?

At V_CE = 400 V, V_GE = 15 V, and T_J = 150°C, the typical short-circuit withstand time is 2.5 µs. This value assumes clamped inductive load and proper gate drive strength; derating is required above 125°C junction temperature.

Can IRGS4B60KD1TRLP be paralleled for higher current capacity?

Yes. Its positive V_CE(sat) temperature coefficient enables stable current sharing across paralleled units. Use matched gate resistors, symmetrical PCB layout, and shared heatsink mounting to ensure thermal uniformity and balanced dynamic current distribution.

IRGS4B60KD1TRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 11 A

Current - Collector Pulsed (Icm):: 22 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 4A

Power - Max:: 63 W

Switching Energy:: 73µJ (on), 47µJ (off)

Input Type:: Standard

Gate Charge:: 12 nC

Td (on/off) @ 25°C:: 22ns/100ns

Test Condition:: 400V, 4A, 100Ohm, 15V

Reverse Recovery Time (trr):: 93 ns

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRGS4B60KD1TRLP FAQ

1.How can I place an order for IRGS4B60KD1TRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS4B60KD1TRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS4B60KD1TRLP reliable?

The price and inventory of IRGS4B60KD1TRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS4B60KD1TRLP is usually 5 days.

3.What payment methods are accepted for IRGS4B60KD1TRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS4B60KD1TRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS4B60KD1TRLP?

IRGS4B60KD1TRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS4B60KD1TRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS4B60KD1TRLP?

For technical support, including IRGS4B60KD1TRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS4B60KD1TRLP requirements.

6.How does Aetrix verify that IRGS4B60KD1TRLP is sourced from the original manufacturer or authorized distributors?

All IRGS4B60KD1TRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS4B60KD1TRLP meets industry standards.

7.What is the process for return or replacement of IRGS4B60KD1TRLP?

All IRGS4B60KD1TRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRGS4B60KD1TRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS4B60KD1TRLP part is unused and in its original packaging.

Return procedure for IRGS4B60KD1TRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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