Infineon Technologies IRGS6B60KDPBF
- Part No.:
- IRGS6B60KDPBF
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRGS6B60KDPBF.pdf
- Description:
- IGBT 600V 13A 90W D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,507
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Product details
Overview
IRGS6B60KDPBF from Infineon Technologies is a 600 V, 10 A (TC = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in D²PAK (TO-263) package. It delivers 1.8 V typical VCE(on), 10 μs short-circuit capability, and low EMI for motor control inverters operating at 15–20 kHz switching frequency.
For engineers reviewing the IRGS6B60KDPBF datasheet, IRGS6B60KDPBF pinout, IRGS6B60KDPBF application, or IRGS6B60KDPBF equivalent, key selection criteria include RBSOA robustness, clamped inductive load rating (26 A), diode reverse recovery energy (90–175 μJ), and thermal resistance (RθJC = 1.4 °C/W for IGBT).
Technical Context
This IGBT employs non-punch-through (NPT) technology with positive VCE(on) temperature coefficient and square reverse bias safe operating area (RBSOA), enabling stable parallel operation and predictable thermal derating. Its integrated diode features ultrasoft reverse recovery (trr = 70–80 ns, QRR = 22–100 nC) and low forward voltage (VFM = 1.20–1.45 V at 5 A).
Switching performance is optimized for hard-switched motor drives: total gate charge is 18.2 nC, turn-off delay td(off) is 215–255 ns, and total switching loss (Etot) ranges from 245–560 μJ depending on junction temperature and test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 600 V - Withstands DC bus voltages up to 400 V nominal with 50% safety margin in 3-phase inverter applications. |
| IC @ TC = 100°C | 10 A - Continuous current rating suitable for 750 W–1 kW motor drive stages with forced-air cooling. |
| VCE(on) typ. | 1.8 V @ 5 A, 15 V VGE - Enables <1.0 W conduction loss per device at rated current, reducing heatsink requirements. |
| Eoff | 135–300 μJ @ 5 A, 400 V - Low turn-off loss supports higher PWM frequencies without excessive thermal stress. |
| tsc | >10 μs @ TJ = 150°C - Provides reliable short-circuit protection window for overcurrent detection and shutdown. |
| RθJC (IGBT) | 1.4 °C/W - Enables direct mounting to heatsink with minimal thermal interface resistance for compact thermal design. |
| Qg | 18.2 nC - Matches standard 15 V gate drivers with ≤1 A peak output; allows use of low-cost discrete driver ICs. |
Pinout & Package
IRGS6B60KDPBF uses the D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.16 × 14.99 × 4.83 mm and weighs 1.44 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input terminal | Receives 15 V logic-level gate drive; requires external 100 Ω gate resistor for controlled switching and EMI reduction. |
| Pin 2 (Collector) | Main power output node | Connected to high-side DC bus; electrically tied to exposed drain pad-must be isolated from heatsink unless floating. |
| Pin 3 (Emitter) | Power return and reference node | Serves as common emitter for IGBT and cathode for integrated diode; forms low-inductance return path for motor phase current. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft-recovery diode | trr = 70–80 ns, Erec = 90–175 μJ - Minimizes voltage overshoot and ringing during freewheeling, reducing snubber size and EMI filter burden. |
| Square RBSOA | Rated for full VCES and IC simultaneously up to 100 μs - Supports reliable operation under transient overvoltage and overload conditions without secondary breakdown. |
| 10 μs short-circuit capability | Validated at TJ = 150°C - Enables deterministic fault response in motor drives where current-sense latency exceeds 5 μs. |
| Low VCE(on) temperature coefficient | Positive dVCE(on)/dTJ - Ensures natural current sharing when paralleling multiple devices without external ballasting resistors. |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile - Compatible with standard Pb-free SMT assembly processes up to 260°C peak temperature. |
Applications
| Industrial Motor Inverters | Appliance Drive Modules |
|---|---|
Use Scenario: 3-phase inverter stage in 0.75–1.5 kW variable-frequency drives for pumps, fans, and compressors. IC Role / Device Role / Timing Role: High-side switching element in six-pack topology; switches at 16 kHz with dead-time-controlled complementary pairs. Use Value: Square RBSOA and 10 μs short-circuit rating allow safe operation during stall events and line transients without desaturation protection circuitry. |
Use Scenario: Single-phase PMSM/BLDC drive in washing machines and HVAC blowers with space-constrained PCB layout. IC Role / Device Role / Timing Role: Half-bridge leg switch with integrated diode handling regenerative braking current. Use Value: Ultrafast soft diode reduces EMI emissions by >6 dBμV in 30–100 MHz band, easing EMC certification. |
| Power Tools & E-Bike Controllers | UPS Output Stage |
Use Scenario: 24–48 V battery-powered BLDC controllers requiring high pulse-current capability and thermal resilience. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectified buck-boost converter feeding motor gate drivers. Use Value: Clamped inductive load current rating of 26 A supports 3× peak torque surges without derating or paralleling. |
Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC sine wave with <5% THD. IC Role / Device Role / Timing Role: IGBT/diode pair in H-bridge output stage operating in 50/60 Hz fundamental + 16 kHz carrier PWM mode. Use Value: Low VF diode (1.25 V typ.) cuts conduction loss by 35% vs. standard FRD, improving full-load efficiency to >93%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT with integrated diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STGP10NC60KD | 600 V / 10 A, TO-220 package, RθJC = 2.0 °C/W, VCE(on) = 2.0 V typ., trr = 120 ns | Higher conduction loss and slower diode recovery increase heatsink size and EMI filtering cost. | Preferred only where through-hole mounting and legacy footprint compatibility are mandatory. |
| IXYS IXGN100N60A3 | 600 V / 100 A, TO-247 package, RθJC = 0.35 °C/W, VCE(on) = 1.7 V, no integrated diode | Requires external ultrafast diode; superior thermal performance but larger footprint and BOM count. | Recommended for high-volume industrial inverters needing >50,000-hour field reliability and active thermal monitoring. |
Compared with STGP10NC60KD and IXGN100N60A3, IRGS6B60KDPBF uniquely balances surface-mount integration, soft-diode EMI performance, and thermal efficiency in a single D²PAK device-making it optimal for cost-sensitive, space-constrained motor drive modules where board-level assembly yield and EMC pass rate are critical.
Availability
IRGS6B60KDPBF is available at Aetrix Electronics and suitable for industrial motor inverters, appliance drive modules, power tool controllers, and UPS output stages requiring stable component supply and long-term production continuity.
Supply support for IRGS6B60KDPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy systems.
This device belongs to Infineon's StrongIRFET™ IGBT family, engineered specifically for high-efficiency, high-reliability motor control applications demanding rugged short-circuit behavior and low EMI in compact form factors.
FAQ
What is the maximum recommended gate resistor value for IRGS6B60KDPBF in 16 kHz motor drive applications?
The datasheet specifies RG = 100 Ω for all switching loss measurements at TJ = 150°C. Using RG > 100 Ω increases turn-on/off times beyond 300 ns, raising Etot by up to 40% and risking shoot-through in half-bridge configurations. For 16 kHz operation with 500 ns dead time, 47–68 Ω is optimal to balance loss and robustness.
Can IRGS6B60KDPBF be used in avalanche mode for unclamped inductive switching?
No. This device is not rated for repetitive avalanche operation. Its absolute maximum rating for clamped inductive load current (ILM = 26 A) assumes external snubber or active clamp circuitry. Unclamped inductive switching exceeds SOA limits and risks immediate failure due to secondary breakdown.
Is the integrated diode rated for continuous freewheeling in bidirectional current paths?
Yes. The diode has IF = 10 A continuous rating at TC = 100°C and 1.25 V forward drop at 5 A, matching the IGBT's current capability. Its ultrasoft recovery ensures low reverse recovery current (IRR ≤ 14 A) and energy (Erec ≤ 175 μJ), making it suitable for bidirectional current in BLDC trapezoidal commutation.
Does IRGS6B60KDPBF require negative gate voltage for reliable turn-off in high-dV/dt environments?
No. Gate threshold voltage (VGE(th) = 3.5–5.5 V) and ±20 V absolute maximum rating ensure noise immunity with 0 V to +15 V gate drive. Negative bias is unnecessary; however, a 10 kΩ pull-down resistor from gate to emitter is required to prevent spurious turn-on from Miller coupling during high-speed switching.
IRGS6B60KDPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 13 A
- Current - Collector Pulsed (Icm):
- 26 A
- Vce(on) (Max) @ Vge, Ic:
- 2.2V @ 15V, 5A
- Power - Max:
- 90 W
- Switching Energy:
- 110µJ (on), 135µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 18.2 nC
- Td (on/off) @ 25°C:
- 25ns/215ns
- Test Condition:
- 400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr):
- 70 ns
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRGS6B60KDPBF FAQ
1.How can I place an order for IRGS6B60KDPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGS6B60KDPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGS6B60KDPBF reliable?
The price and inventory of IRGS6B60KDPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS6B60KDPBF is usually 5 days.
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IRGS6B60KDPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGS6B60KDPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGS6B60KDPBF?
For technical support, including IRGS6B60KDPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS6B60KDPBF requirements.
6.How does Aetrix verify that IRGS6B60KDPBF is sourced from the original manufacturer or authorized distributors?
All IRGS6B60KDPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS6B60KDPBF meets industry standards.
7.What is the process for return or replacement of IRGS6B60KDPBF?
All IRGS6B60KDPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRGS6B60KDPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGS6B60KDPBF part is unused and in its original packaging.
Return procedure for IRGS6B60KDPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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