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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IRGS6B60KDTRRP

Name: IRGS6B60KDTRRP
Brand: Infineon Technologies
SKU: IRGS6B60KDTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRGS6B60KDTRRP

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRGS6B60KDTRRP.pdf

Description:: IGBT NPT 600V 13A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRGS6B60KDTRRP from Infineon Technologies is a 600 V, 10 A (T_C = 100°C) insulated gate bipolar transistor with integrated ultrafast soft-recovery anti-parallel diode in D²PAK (TO-263) package. It delivers 1.8 V typical V_CE(on), 10 μs short-circuit capability, and 70 ns diode reverse recovery time - optimized for motor control inverters, UPS systems, and industrial SMPS where low EMI and rugged transient performance are critical.

For engineers reviewing the IRGS6B60KDTRRP datasheet, IRGS6B60KDTRRP pinout, IRGS6B60KDTRRP application, or IRGS6B60KDTRRP equivalent, key selection criteria include its square RBSOA, positive V_CE(on) temperature coefficient, 1.4 °C/W junction-to-case thermal resistance (IGBT), and verified clamped inductive load current of 26 A at T_J = 150°C.

Technical Context

This IGBT employs non-punch-through (NPT) technology to achieve low V_CE(on) and stable switching behavior across temperature. Its integrated diode features ultrasoft reverse recovery (t_rr = 70–80 ns, Q_RR = 90–175 μJ) and low forward voltage (V_FM = 1.25 V typ. @ 5 A), minimizing commutation losses in hard-switched topologies.

The device supports robust parallel operation due to positive V_CE(on) temperature coefficient and exhibits full square reverse bias safe operating area (RBSOA) up to 600 V. Short-circuit withstand time exceeds 10 μs at T_J = 150°C with V_GE = 15 V, enabling reliable protection in fault conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	600 V - Maximum blocking voltage before avalanche; enables use in 400 V DC bus motor drives and 380 V AC input SMPS.
I_C @ T_C = 100°C	10 A - Continuous collector current derated for heatsink-limited thermal design; defines steady-state power stage rating.
V_CE(on) typ.	1.8 V @ I_C = 5 A, V_GE = 15 V - Low conduction loss improves efficiency in 1–5 kW inverter stages.
t_rr (diode)	70 ns @ T_J = 150°C - Ultrafast soft recovery reduces voltage overshoot and EMI during freewheeling transitions.
R_θJC (IGBT)	1.4 °C/W - Enables direct mounting to heatsinks with predictable thermal drop; supports compact thermal design.
E_off typ.	135 μJ @ I_C = 5 A, V_CC = 400 V - Quantifies turn-off energy loss; critical for calculating switching loss and thermal budget.
Q_g	18.2 nC - Total gate charge determines driver strength requirement and influences switching speed control.

Pinout & Package

IRGS6B60KDTRRP is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Collector (C), and Emitter (E). The package features an isolated metal tab for direct heatsink attachment and optimized thermal path from die to case.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls IGBT conduction via voltage-driven MOS-like input; requires 15 V drive for full saturation and low V_CE(on).
C	Collector terminal	High-side switch node; connects to DC bus or inductive load; rated for 600 V blocking and 26 A pulsed current.
E	Emitter terminal	Common reference for gate drive and load return path; also serves as cathode for integrated anti-parallel diode.

Key Features

Feature	Design Value
Ultrafast soft-recovery diode	t_rr = 70 ns, Q_RR = 90–175 μJ - Reduces diode-induced voltage spikes and EMI in bridge-leg commutation.
Square RBSOA	Rated up to 600 V @ 10 A, 10 μs - Enables reliable operation under inductive switching transients without secondary breakdown.
10 μs short-circuit capability	Validated at T_J = 150°C, V_GE = 15 V - Supports fast overcurrent detection and shutdown in motor drive protection schemes.
Positive V_CE(on) tempco	+mV/°C trend - Ensures inherent current sharing when paralleling multiple devices without external ballasting resistors.
Low V_CE(on)	1.8 V typ. @ 5 A - Delivers <10 W conduction loss at 5 A, improving thermal margin in space-constrained inverters.

Applications

Motor Drive Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase 1–3 kW BLDC/PMSM inverter stage with 400 V DC bus and forced-air cooling.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-step or SVM-controlled half-bridge leg; handles PWM switching at 8–20 kHz.

Use Value: Square RBSOA and 10 μs short-circuit rating enable robust fault handling; ultrasoft diode minimizes shoot-through risk during dead-time transitions.

Use Scenario: Online double-conversion UPS output inverter delivering clean 230 V AC from 380–400 V DC bus.

IC Role / Device Role / Timing Role: IGBT switch in full-bridge topology; operates with sinusoidal PWM at 16 kHz to suppress audible noise.

Use Value: Low EMI from soft diode recovery and controlled dV/dt reduces filter component count; 1.4 °C/W R_θJC simplifies thermal management under continuous load.

Industrial Switch-Mode Power Supplies

Induction Heating Half-Bridge

Use Scenario: 2.5 kW resonant LLC or phase-shifted full-bridge SMPS for factory automation equipment.

IC Role / Device Role / Timing Role: Primary-side switching device in hard-switched or ZVS-enabled topology; conducts 10 A peak current at 100 kHz.

Use Value: Benchmark efficiency enabled by 1.8 V V_CE(on) and low E_off (135 μJ); rugged transient performance withstands reflected surge from transformer leakage inductance.

Use Scenario: 3–5 kW resonant half-bridge for cooktop or industrial heating, operating at 20–50 kHz with high di/dt.

IC Role / Device Role / Timing Role: Main switching device with integrated diode conducting freewheeling current during zero-voltage switching intervals.

Use Value: Diode's 70 ns t_rr and low Q_RR prevent reverse recovery failure during high-frequency resonance; clamped inductive load rating of 26 A supports burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT with integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB6B60KDPbF	TO-220AB through-hole package; identical electrical specs but higher R_θJC (1.6 °C/W vs. 1.4 °C/W).	Preferred for prototyping or lower-volume designs where manual soldering and socket mounting are used.	Select when board-level reworkability or legacy footprint compatibility outweighs thermal performance gains.
IRGSL6B60KDPbF	TO-262 (I²PAK) package; same die but different leadframe; R_θJC = 1.5 °C/W; slightly higher E_off (145 μJ).	Suitable for hybrid PCB-mount + heatsink designs requiring mechanical robustness and moderate thermal demand.	Choose when mechanical stability and ease of automated assembly are prioritized over minimal thermal resistance.

Compared with IRGB6B60KDPbF and IRGSL6B60KDPbF, IRGS6B60KDTRRP offers the lowest junction-to-case thermal resistance (1.4 °C/W) and best EMI performance due to its D²PAK package geometry and optimized diode softness - making it optimal for high-density, thermally constrained motor drive modules.

Availability

IRGS6B60KDTRRP is available at Aetrix Electronics and suitable for motor drive inverters, uninterruptible power supplies, industrial switch-mode power supplies, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IRGS6B60KDTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

This part belongs to Infineon's "600 V Soft-Forward IGBT" product line, engineered specifically for high-efficiency, low-EMI motor control and industrial power conversion where integrated diode performance and rugged short-circuit behavior are essential.

FAQ

What is the maximum gate-emitter voltage rating for IRGS6B60KDTRRP?

The absolute maximum V_GE is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative gate bias below –10 V may cause unintended turn-on due to Miller coupling in high-dV/dt environments. Gate drive circuits must include clamping and sufficient sink/source current capability (≥2 A peak) to manage 18.2 nC total charge.

Can IRGS6B60KDTRRP be used in parallel configurations?

Yes - its positive V_CE(on) temperature coefficient ensures natural current sharing across multiple devices without external emitter resistors. Successful parallel operation requires matched gate drive loop inductance, symmetrical PCB layout, and shared heatsink mounting to maintain uniform junction temperature. Derating to 80% of total rated current per device is recommended for reliability.

What is the significance of the "ultrafast soft recovery diode" in this IGBT?

The integrated diode exhibits 70–80 ns reverse recovery time and low peak reverse recovery current (I_RR ≤ 14 A), resulting in minimal voltage overshoot and reduced EMI during freewheeling transitions. This eliminates need for external snubbers in many 10–20 kHz motor drive applications and improves system efficiency by lowering diode conduction and recovery losses compared to standard FRD-based solutions.

Does IRGS6B60KDTRRP require a negative gate voltage for reliable turn-off?

No - it reliably turns off with 0 V gate bias, but applying –5 V to –10 V improves noise immunity and prevents spurious turn-on caused by Miller-induced gate voltage spikes during high-dV/dt switching events. Negative bias is strongly recommended in high-noise industrial environments or when driving inductive loads with fast current transients, especially above 10 A peak current.

IRGS6B60KDTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 13 A

Current - Collector Pulsed (Icm):: 26 A

Vce(on) (Max) @ Vge, Ic:: 2.2V @ 15V, 5A

Power - Max:: 90 W

Switching Energy:: 110µJ (on), 135µJ (off)

Input Type:: Standard

Gate Charge:: 18.2 nC

Td (on/off) @ 25°C:: 25ns/215ns

Test Condition:: 400V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr):: 70 ns

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRGS6B60KDTRRP FAQ

1.How can I place an order for IRGS6B60KDTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRGS6B60KDTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRGS6B60KDTRRP reliable?

The price and inventory of IRGS6B60KDTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGS6B60KDTRRP is usually 5 days.

3.What payment methods are accepted for IRGS6B60KDTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGS6B60KDTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRGS6B60KDTRRP?

IRGS6B60KDTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRGS6B60KDTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRGS6B60KDTRRP?

For technical support, including IRGS6B60KDTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGS6B60KDTRRP requirements.

6.How does Aetrix verify that IRGS6B60KDTRRP is sourced from the original manufacturer or authorized distributors?

All IRGS6B60KDTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGS6B60KDTRRP meets industry standards.

7.What is the process for return or replacement of IRGS6B60KDTRRP?

All IRGS6B60KDTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRGS6B60KDTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRGS6B60KDTRRP part is unused and in its original packaging.

Return procedure for IRGS6B60KDTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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