Infineon Technologies IRGS8B60KTRLPBF

Overview

IRGS8B60KTRLPBF from Infineon Technologies (formerly International Rectifier) is a 600 V, 20 A (T_C = 100 °C), D²PAK-packaged insulated gate bipolar transistor optimized for motor control inverters and industrial switching power supplies. It features low 1.8 V typical V_CE(on) at 8 A/15 V/25 °C, 10 µs short-circuit capability, square RBSOA, and positive V_CE(on) temperature coefficient for stable parallel operation.

For engineers reviewing the IRGS8B60KTRLPBF datasheet, IRGS8B60KTRLPBF pinout, IRGS8B60KTRLPBF application, or IRGS8B60KTRLPBF equivalent, key selection criteria include its 600 V V_CES, 10 µs SCSOA rating, 29 nC total gate charge, R_θJC = 0.90 °C/W thermal resistance, and suitability for hard-switched 3-phase inverter legs up to 2 kW.

Technical Context

This IGBT employs non-punch-through (NPT) silicon technology with a robust square reverse bias safe operating area (RBSOA) and full 10 µs short-circuit withstand time at T_J = 150 °C under V_CC = 360 V. Its positive V_CE(on) temperature coefficient ensures current sharing stability when paralleled.

Switching performance is characterized by 220–330 µJ E_on and 270–381 µJ E_off at 150 °C, with gate charge components Q_ge = 3.7 nC and Q_gc = 14 nC - enabling predictable drive design using standard ±15 V gate drivers with 50 Ω series resistance.

Key Specifications

Pinout & Package

D²PAK (TO-263) package with isolated tab; thermally enhanced plastic surface-mount housing suitable for automated assembly and high-current PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP15H60DF and IXGH12N60B3, IRGS8B60KTRLPBF delivers optimal balance of current capability, thermal resistance, and short-circuit robustness for surface-mounted 2 kW motor drives - offering 19 A continuous rating with 0.90 °C/W R_θJC and verified 10 µs fault tolerance.

Availability

IRGS8B60KTRLPBF is available at Aetrix Electronics and suitable for industrial motor inverters, uninterruptible power supplies, solar microinverters, and induction heating drivers requiring stable component supply and long-term production continuity.

Supply support for IRGS8B60KTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRGx8B60K series was developed specifically for high-reliability industrial motor control and power conversion, emphasizing ruggedness, thermal efficiency, and ease of paralleling in compact inverter modules.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 50 Ω for characterization at 150 °C, yielding td(off) = 180–198 ns and tf = 40–56 ns. For gate drive stability, R_G should not exceed 100 Ω - beyond which turn-off delay increases nonlinearly and E_off rises sharply above 381 µJ, risking thermal overstress during repeated switching.

Can IRGS8B60KTRLPBF be used without a negative gate voltage during turn-off?

Yes - the device's V_GE(th) range (3.5–5.5 V) and ±20 V absolute maximum gate rating allow safe operation with 0 V turn-off bias. However, –5 V is recommended to suppress Miller-induced false turn-on in high-dV/dt bridge configurations, especially when paralleled or operating above 10 kHz.

Is the D²PAK package electrically isolated between collector and mounting tab?

No - the collector is directly connected to the exposed copper tab. Electrical isolation requires a dielectric thermal interface material (e.g., ceramic washer or silicone pad) and insulated mounting hardware. Failure to isolate risks short-circuiting the DC bus to chassis ground.

How does V_CE(on) change across temperature and current?

V_CE(on) increases from 1.8 V (25 °C) to 2.3 V (175 °C) at 8 A/15 V, reflecting its positive temperature coefficient. At 150 °C, it rises to 2.2–2.5 V across 4–16 A, enabling predictable loss modeling and derating curves for thermal design without iterative simulation.