Infineon Technologies IRSM005-800MHTR

Overview

IRSM005-800MHTR from Infineon Technologies (formerly International Rectifier) is a half-bridge intelligent power module integrating two 40V, 80A HEXFET MOSFETs and a monolithic gate driver in a 7×8 mm PQFN package. It delivers 2.7 mΩ typical R_DS(on) per FET, supports 10–20 V gate drive supply, and features independent logic-compatible inputs (3.3/5/15 V), undervoltage lockout, and matched propagation delay for motor control and DC-DC conversion.

For engineers reviewing the IRSM005-800MHTR datasheet, IRSM005-800MHTR pinout, IRSM005-800MHTR application, or IRSM005-800MHTR equivalent, key selection criteria include bootstrap high-side drive capability, thermal resistance (R_th(J-B) = 3.8 °C/W), shoot-through protection logic, and RMS current derating at 20 kHz switching.

Technical Context

This half-bridge IPM implements independent high-side (HIN) and low-side (LIN) PWM inputs with synchronous dead-time management via external timing. The internal driver provides 290 mA high-side and 600 mA low-side peak output current, enabling fast MOSFET switching with 160 ns typical turn-on and 150 ns turn-off propagation delays.

The module uses floating high-side gate drive referenced to VS, with VB supply range up to 225 V and VS offset up to 40 V. Logic-level compatibility, integrated UVLO (8.2–9.8 V hysteresis), and thermal shutdown at 150 °C support robust operation in compact, high-power-density inverters.

Key Specifications

Pinout & Package

Package: PQFN 7×8 mm with exposed thermal pad (Pin 28, connected to COM). Surface-mount, leadless design optimized for low-inductance layout and board-level thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge power stage applications.

Compared with IRSM836-024MHTR and FDMF8811, the IRSM005-800MHTR offers superior power density (40 V rating + lowest R_DS(on)) and full integration (no external driver needed), making it optimal for 36–48 V motor drives where efficiency and layout simplicity are prioritized.

Availability

IRSM005-800MHTR is available at Aetrix Electronics and suitable for advanced motor drives, DC-AC inverters, and DC-DC converters requiring stable component supply, consistent PQFN 7×8 mm sourcing, and RoHS-compliant production volumes.

Supply support for IRSM005-800MHTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET and IPM innovation.

The IRSM series was developed specifically for high-power-density, low-voltage motor control and power conversion, integrating gate drivers and MOSFETs to eliminate discrete layout bottlenecks and improve system reliability.

FAQ

What is the maximum allowable bootstrap capacitor voltage (V_BS) for reliable operation?

The IRSM005-800MHTR specifies V_BS (VB relative to VS) up to 20 V, with absolute maximum VB of 225 V. For stable bootstrap operation, use a 22 µF ceramic or polymer capacitor rated ≥25 V and placed within 5 mm of Pins 1 (VB) and 26/27 (VS). Exceeding 20 V on V_BS risks overvoltage damage to the internal high-side driver.

Can LIN and HIN be driven simultaneously without shoot-through risk?

No - simultaneous high logic on LIN and HIN violates the Input-Output Logic Level Table and causes shoot-through. The device relies on external dead-time insertion; the recommended minimum dead time is 0.3 µs. Internal logic does not enforce blanking - proper PWM generation with non-overlapping edges is mandatory.

Is the exposed thermal pad (Pin 28) electrically isolated or must it be connected to COM?

Pin 28 is the exposed thermal pad and must be soldered to a PCB copper area connected to COM (circuit ground). It is not electrically isolated - connecting it to COM ensures correct reference for low-side driver operation and achieves the specified R_th(J-B) = 3.8 °C/W. Leaving it floating degrades thermal performance and may cause logic malfunction.

Does the module include reverse recovery protection for the body diodes during freewheeling?

The IRSM005-800MHTR incorporates fast-recovery body diodes with t_rr = 16 ns and Q_rr = 5 nC at 25°C. These parameters are characterized and guaranteed - no external snubbers are required for typical 5–20 kHz motor drive freewheeling. However, Q_rr increases with temperature, so thermal design must maintain T_J ≤125°C to avoid excessive recovery loss.