Renesas ISL55110IRZ

Overview

ISL55110IRZ from Renesas Electronics is a dual high-speed in-phase MOSFET driver IC designed for accurate pulse generation and buffering in precision timing-critical systems. It delivers 3.5A peak output current, 1.5ns rise/fall times into 100pF, and 6ns minimum pulse width, with independent IN-A/IN-B inputs driving OA/OB outputs synchronously to VH rail (5V–13.2V) - deployed in ultrasound transmit stages and CCD horizontal drive circuits.

For engineers reviewing the ISL55110IRZ datasheet, ISL55110IRZ pinout, ISL55110IRZ application, or ISL55110IRZ equivalent, this page provides verified package mapping (16-lead QFN), confirmed in-phase dual-driver functionality, thermal resistance (θ_JA = 45°C/W), power-down mode timing (650ns wake-up), and logic compatibility with both 3.3V and 5V input families.

Technical Context

The ISL55110IRZ integrates two matched CMOS output stages with tightly controlled input thresholds (V_{IX_LH} = 1.42V typ, V_{IX_HL} = 1.22V typ) to minimize pulse-width distortion from input slew rate. Its dual in-phase architecture enables synchronous high-side switching across capacitive loads up to 680pF while maintaining <0.5ns channel-to-channel skew.

It operates with separate logic (V_DD = 2.7–5.5V) and driver (V_H = 5–13.2V) rails, features an ENABLE pin (QFN only) for high-speed tri-state control, and includes a dedicated PD pin for low-power standby (12µA I_DD-PDN). The exposed thermal pad (EP) is electrically tied to GND (Pin 11) and requires PCB grounding per thermal layout guidelines.

Key Specifications

Pinout & Package

ISL55110IRZ is housed in a RoHS-compliant 16-lead 4mm × 4mm Exposed Pad QFN package (PKG DWG L16.4x4A), with thermal pad (EP) electrically connected to GND (Pin 11) and requiring solder mask-defined thermal land pattern per Renesas TB379 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed MOSFET driver applications.

Compared with ISL55111IRZ, the ISL55110IRZ provides true in-phase operation essential for parallel MOSFET drive, while LM5112MG/NOPB trades integration and thermal efficiency for raw current headroom in non-dual applications.

Availability

ISL55110IRZ is available at Aetrix Electronics and suitable for ultrasound imaging systems, CCD-based machine vision platforms, and high-speed clock distribution networks requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for ISL55110IRZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog power, and mixed-signal solutions for automotive, industrial, and healthcare markets.

The ISL55110IRZ belongs to Renesas' high-speed driver product line, engineered specifically for precision pulse generation in medical ultrasound, scientific imaging, and industrial sensing applications demanding sub-nanosecond timing fidelity.

FAQ

What is the function of the ENABLE pin on the ISL55110IRZ?

The ENABLE pin (Pin 2) is exclusive to the QFN package and provides high-speed tri-state control of both OA and OB outputs. When ENABLE is low, the ISL55110IRZ operates normally with outputs driven by IN-A/IN-B. When ENABLE is high, OA and OB enter high-impedance state regardless of input states - enabling dynamic bus isolation in multi-driver systems without altering input logic.

Does the ISL55110IRZ support 3.3V logic inputs?

Yes, the ISL55110IRZ supports 3.3V logic inputs natively. Its input thresholds (V_{IX_LH} = 1.42V typ, V_{IX_HL} = 1.22V typ) and hysteresis (0.2V) ensure robust switching with 3.3V CMOS/TTL signals across -40°C to +85°C, and its V_DD range (2.7V–5.5V) accommodates direct connection to 3.3V supply rails.

What is the maximum allowable VH supply voltage for the ISL55110IRZ?

The absolute maximum VH supply voltage for the ISL55110IRZ is 14.0V, but the recommended operating range is 5V to 13.2V per the datasheet. Operation at 13.2V enables full 12V output swing (VOH–VOL = 12V) into 100pF loads while maintaining 1.5ns rise/fall times and staying within safe thermal limits when using the 4×4mm QFN package with proper PCB thermal design.

How does the power-down (PD) feature affect ISL55110IRZ operation?

Asserting PD high places the ISL55110IRZ into power-down mode, reducing logic supply current to 12µA (I_DD-PDN) and driver supply current to 2.5µA (I_{H_PDN}). Both OA and OB go high-impedance, and internal circuitry enters low-power state - ideal for ultrasound systems during receive phases or portable devices in standby, with 650ns wake-up time to full operation.

Can the ISL55110IRZ drive a 680pF load at 50MHz?

Yes, the ISL55110IRZ can drive a 680pF load at 50MHz with verified performance: propagation delay spread remains <0.5ns (tSkewR/tSkewF), and rise/fall times are 14.5ns/14.1ns (typ) under those conditions. However, power dissipation increases significantly - users must calculate junction temperature using θ_JA = 45°C/W and Equation 1 from the datasheet to ensure TJ ≤ +150°C.