My Inquiry
My Account
Renesas ISL55110IRZ-T
- Part No.:
- ISL55110IRZ-T
- Manufacturer:
- Renesas
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 16-TFQFN Exposed Pad
- Datasheet:
-
ISL55110IRZ-T.pdf
- Description:
- IC HALF BRIDGE DRVR 100MA 16QFN
- Quantity:
- Payment:
- Shipping:
Inventory:660
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ISL55110IRZ-T from Renesas Electronics is a dual high-speed MOSFET driver with in-phase outputs, designed for precise pulse generation and buffering in demanding imaging and timing systems. It delivers 3.5A peak output current, 1.5ns rise/fall times (100pF), sub-0.5ns channel skew, and operates across 5V–13.2V driver rail (VH) and 2.7V–5.5V logic supply (VDD), enabling fast-switching control of power MOSFETs in ultrasound transducer arrays.
For engineers reviewing the ISL55110IRZ-T datasheet, ISL55110IRZ-T pinout, ISL55110IRZ-T application, or ISL55110IRZ-T equivalent, key selection considerations include its 16-pin QFN package with exposed thermal pad, in-phase dual-driver architecture, tight input threshold control (±0.1V hysteresis), power-down mode (12µA IDD-PDN), and compatibility with both 3.3V and 5V logic families.
Technical Context
The ISL55110IRZ-T integrates two independent CMOS drivers sharing a common VH rail and GND reference, each with dedicated IN-A/IN-B inputs and OA/OB outputs. Its input stage features tightly controlled thresholds (VIX_LH = 1.42V typ, VIX_HL = 1.22V typ) and 0.2V hysteresis to suppress noise-induced pulse width distortion from slow input edges.
Output stage architecture supports rail-to-rail swing (within 30mV of VH/GND) with low rDS(on) of 3Ω (typ) at VH = 12V, enabling fast charging of large capacitive loads (e.g., 330pF in <3ns). The device includes dedicated PD (power-down) and ENABLE (QFN-only) pins for hierarchical control of quiescent current and output tri-state behavior.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | 3.5A - sufficient to drive high-capacitance ultrasound transducer arrays or CCD horizontal shift registers without external buffers |
| Rise/Fall Time | 1.5ns (100pF load) - enables >70MHz operation with minimal signal distortion in clock distribution paths |
| Channel Skew | <0.5ns - ensures synchronized switching critical for multi-element piezoelectric actuator control |
| Logic Compatibility | 3.3V & 5V - interoperable with FPGA I/O banks, microcontroller GPIOs, and ASIC interface standards |
| Driver Rail Range | 5V to 13.2V - supports wide-voltage power stages including 12V motor drivers and HV analog front-ends |
| Power-down Current | 12µA - reduces system standby power in portable medical imaging devices |
| Min Pulse Width | 6ns - accommodates ultra-short gating pulses required in time-of-flight distance sensing |
Pinout & Package
ISL55110IRZ-T is housed in a 4mm × 4mm, 16-lead QFN package with exposed thermal pad (EP), optimized for high-power density and thermal performance (θJA = 45°C/W). The EP must be soldered to a PCB ground plane per Renesas layout guidelines to maintain junction temperature below +150°C under full-load conditions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD (Pin 1) | Logic supply input | Powers internal input buffer and control logic; accepts 2.7V–5.5V; decoupling capacitor required adjacent to pin |
| VH (Pin 10) | Driver high-rail supply | Provides output swing ceiling (5V–13.2V); separate from VDD to enable level-shifting; requires heavy local bypassing (4.7µF + 0.1µF) |
| GND (Pin 11) | Common return | Reference for both VH and VDD; electrically tied to exposed pad (EP); must be low-inductance connection to minimize ground bounce |
| PD (Pin 3) | Power-down control | Active-high signal placing both drivers in low-quiescent state (IDD-PDN = 12µA); retains input state but disables outputs |
| ENABLE (Pin 2) | Output enable/disable | QFN-exclusive pin; low = normal operation, high = tri-state outputs (open-drain behavior); enables dynamic output gating |
| IN-A (Pin 5) | Channel A input | Non-inverting logic-level input controlling OA; compatible with TTL and CMOS; rise/fall time <2ns recommended |
| IN-B (Pin 4) | Channel B input | Non-inverting logic-level input controlling OB; identical threshold specs as IN-A; enables independent phasing of dual outputs |
| OA (Pin 9) | Channel A output | High-current driver output swinging between GND and VH; rDS(on) = 3Ω (typ) at VH = 12V; drives MOSFET gates or capacitive loads directly |
| OB (Pin 12) | Channel B output | High-current driver output identical to OA; in-phase with OA per ISL55110 specification; matched propagation delay ensures synchronous edge alignment |
| EP | Exposed thermal pad | Electrically connected to GND (Pin 11); primary heat path; requires ≥80% solder coverage and thermal vias to inner ground planes |
Key Features
| Feature | Design Value |
|---|---|
| In-phase dual-output architecture | Both OA and OB track their respective inputs with identical polarity-enables parallel gate driving for stacked MOSFET configurations or balanced load switching |
| Tightly controlled input thresholds | VIX_LH = 1.42V ±0.1V and VIX_HL = 1.22V ±0.1V minimize pulse width variation caused by input slew rate changes in noisy environments |
| Low-skew dual-channel design | tSkewR < 0.5ns ensures simultaneous edge transitions critical for CCD horizontal register clocking and ultrasound beamforming timing accuracy |
| Dual-stage power control | Independent PD (global power-down) and ENABLE (output tri-state) pins allow hierarchical power management-reducing idle current while preserving input state during sleep modes |
| Wide driver rail voltage range | VH = 5V–13.2V supports direct interfacing with diverse power stages-from 5V logic-level MOSFETs to 12V industrial actuators-without external level shifters |
Applications
| Ultrasound Transducer Driver | CCD Horizontal Shift Register |
|---|---|
Use Scenario: Driving high-voltage, high-capacitance piezoelectric elements in portable ultrasound probes requiring precise burst-mode excitation. IC Role / Device Role / Timing Role: Dual-channel MOSFET gate driver generating synchronized, high-current pulses to switch HV transistors that excite piezo elements. Use Value: 3.5A peak current and 1.5ns edge rates enable clean 5–15MHz transmit bursts; low skew ensures uniform element excitation across array channels. | Use Scenario: Clocking horizontal charge transfer in large-format CCD image sensors used in scientific cameras and machine vision systems. IC Role / Device Role / Timing Role: In-phase dual driver delivering precisely aligned clock edges to adjacent CCD shift register stages. Use Value: Sub-0.5ns skew and 6ns minimum pulse width support high-frame-rate readout (≥30fps) with minimal image smearing or timing jitter. |
| High-Speed Clock Distribution | Piezoelectric Distance Sensing |
Use Scenario: Buffering and distributing low-jitter clock signals across multi-layer PCBs in FPGA-based test equipment and high-speed data acquisition systems. IC Role / Device Role / Timing Role: Level-shifting clock repeater translating 3.3V logic clocks to 12V swing for driving long traces or multiple loads. Use Value: 70MHz max frequency and 10.9ns propagation delay ensure deterministic timing; rail-to-rail swing improves noise margin on lossy interconnects. | Use Scenario: Generating short-duration, high-voltage pulses for time-of-flight measurement in industrial proximity sensors and automotive parking assist modules. IC Role / Device Role / Timing Role: Precision pulse generator triggering piezoelectric transducers and capturing echo returns with nanosecond resolution. Use Value: 6ns minimum pulse width and fast rise/fall times enable ≤1cm distance resolution; power-down mode reduces average current in battery-powered units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISL55111IRZ-T | Anti-phase output configuration (IN-B inverted); otherwise identical pinout, specs, and package | Suitable for complementary drive topologies (e.g., half-bridge gate control) where OA and OB must toggle oppositely | Select ISL55111IRZ-T only when anti-phase operation is required; ISL55110IRZ-T is not pin-compatible for such use cases |
| LM5112MG/NOPB | Single-channel, higher 5A peak current, no power-down pin, different pinout (8-pin SOIC), higher 2.5ns rise time | Better suited for single high-current gate drive; lacks dual-channel synchronization and low-power standby capability | Use LM5112MG/NOPB only for non-synchronized, single-MOSFET applications where 5A drive exceeds ISL55110IRZ-T's 3.5A rating |
Compared with ISL55111IRZ-T, the ISL55110IRZ-T provides in-phase outputs essential for parallel load driving, while LM5112MG/NOPB trades dual-channel precision and power management for higher single-channel current-making ISL55110IRZ-T optimal for synchronized imaging and timing systems requiring matched delays and ultra-low standby consumption.
Availability
ISL55110IRZ-T is available at Aetrix Electronics and suitable for ultrasound imaging systems, CCD camera modules, and high-speed clock distribution circuits requiring stable component supply, RoHS-compliant packaging, and guaranteed -40°C to +85°C operation.
Supply support for ISL55110IRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and infrastructure markets.
The ISL55110 product line was engineered specifically for high-fidelity pulse generation in medical imaging and scientific instrumentation-prioritizing timing accuracy, channel matching, and robust high-voltage drive capability over general-purpose logic translation.
FAQ
What is the maximum operating frequency supported by the ISL55110IRZ-T?
The ISL55110IRZ-T supports a maximum operating frequency of 70MHz, verified under standard test conditions (VH = +12V, VDD = +3.6V, TA = +25°C, CL = 100pF/1kΩ). This rating reflects sustained toggling capability with guaranteed timing margins; actual usable frequency depends on load capacitance, supply stability, and PCB layout parasitics. For ISL55110IRZ-T designs targeting >50MHz, Renesas recommends using the QFN package's low-inductance routing and strict decoupling per FN6228 layout guidelines.
Does the ISL55110IRZ-T require external pull-up or pull-down resistors on its inputs?
No, the ISL55110IRZ-T does not require external pull-up or pull-down resistors on IN-A or IN-B inputs. Its input stage incorporates a high-impedance buffer with built-in hysteresis (0.2V), and input leakage is limited to 20nA max-ensuring reliable logic-level recognition without external biasing. However, Renesas strongly advises against leaving inputs floating; unused inputs should be tied to VDD or GND to prevent unintended switching and increased power consumption in the ISL55110IRZ-T.
How does the ENABLE pin function on the ISL55110IRZ-T, and is it present on all packages?
The ENABLE pin (Pin 2) is exclusive to the QFN package variant of the ISL55110IRZ-T and is not available on the TSSOP version. When ENABLE is driven low, the ISL55110IRZ-T operates normally with outputs actively controlled by IN-A/IN-B. When ENABLE is driven high, both OA and OB enter high-impedance (tri-state) mode regardless of input states-providing hardware-level output gating. This feature enables dynamic bus arbitration and hot-swap capability in systems using the ISL55110IRZ-T.
What thermal design considerations apply to the ISL55110IRZ-T's exposed pad (EP)?
The ISL55110IRZ-T's exposed pad (EP) is electrically connected to GND (Pin 11) and serves as the primary thermal conduction path. To maintain TJ ≤ +150°C, Renesas specifies ≥80% solder coverage, at least four 0.3mm-diameter thermal vias filled with conductive epoxy beneath the EP, and connection to an internal or external solid ground plane. Failure to implement these measures risks thermal runaway under continuous 3.5A peak loading, especially at elevated ambient temperatures-directly impacting ISL55110IRZ-T reliability and lifetime.
Can the ISL55110IRZ-T drive MOSFETs with gate charges exceeding 50nC?
Yes, the ISL55110IRZ-T can drive MOSFETs with gate charges exceeding 50nC, provided the required switching speed and thermal limits are met. With 3.5A peak current and low 3Ω rDS(on), the ISL55110IRZ-T delivers high dV/dt to charge/discharge large gate capacitances rapidly. For example, a 100nC gate charge MOSFET switched at 1MHz would draw ~100mA average gate current-well within the ISL55110IRZ-T's 100mA DC output rating. System-level validation of junction temperature and waveform fidelity is recommended for such high-Qg applications.
ISL55110IRZ-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 16-TFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge (2)
- Applications:
- Digital Imaging
- Interface:
- Logic
- Load Type:
- Capacitive and Resistive
- Technology:
- Power MOSFET
- Rds On (Typ):
- 3Ohm
- Current - Output / Channel:
- 100mA
- Current - Peak Output:
- 3.5A
- Voltage - Supply:
- 2.7V ~ 5.5V
- Voltage - Load:
- 5V ~ 13.2V
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- -
- Fault Protection:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-QFN (4x4)
ISL55110IRZ-T FAQ
1.How can I place an order for ISL55110IRZ-T through Aetrix?
Please submit a Request for Quotation (RFQ) for ISL55110IRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ISL55110IRZ-T reliable?
The price and inventory of ISL55110IRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL55110IRZ-T is usually 5 days.
3.What payment methods are accepted for ISL55110IRZ-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL55110IRZ-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ISL55110IRZ-T?
ISL55110IRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ISL55110IRZ-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ISL55110IRZ-T?
For technical support, including ISL55110IRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL55110IRZ-T requirements.
6.How does Aetrix verify that ISL55110IRZ-T is sourced from the original manufacturer or authorized distributors?
All ISL55110IRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL55110IRZ-T meets industry standards.
7.What is the process for return or replacement of ISL55110IRZ-T?
All ISL55110IRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL55110IRZ-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ISL55110IRZ-T part is unused and in its original packaging.
Return procedure for ISL55110IRZ-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ISL55110IRZ-T Tags
-
NCP1393BDR2G
onsemi
-
A3909GLNTR-T
Allegro MicroSystems
-
NCP51530BDR2G
onsemi
-
A3909GLYTR-T
Allegro MicroSystems
-
SIC631CD-T1-GE3
Vishay Siliconix
-
BTN70301EPAXUMA1
Infineon Technologies
-
TDA21520AUMA1
Infineon Technologies
-
AOZ5116QI
Alpha & Omega Semiconductor Inc.
-
IRSM005-301MHTR
Infineon Technologies
-
IRSM005-301MH
Infineon Technologies
-
MP6610GJ-Z
Monolithic Power Systems Inc.
-
DRV8908QPWPRQ1
Texas Instruments
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
