Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas ISL55111IRZ-T

Part No.:
ISL55111IRZ-T
Manufacturer:
Renesas
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
16-TFQFN Exposed Pad
Datasheet:
AetrixISL55111IRZ-T.pdf
Description:
IC HALF BRIDGE DRVR 100MA 16QFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,970

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ISL55111IRZ-T from Renesas Electronics is a dual high-speed anti-phase MOSFET driver optimized for accurate pulse generation and low-skew buffering in demanding imaging and timing systems. It delivers 3.5A peak output current, 1.5ns rise/fall times (100pF), 6ns minimum pulse width, and operates with VH = 5–13.2V and VDD = 2.7–5.5V - enabling precise drive of CCD horizontal shift registers and ultrasound transducer arrays.

For engineers reviewing the ISL55111IRZ-T datasheet, ISL55111IRZ-T pinout, ISL55111IRZ-T application, or ISL55111IRZ-T equivalent, this page provides verified functional identity, QFN-16 package mapping, anti-phase output behavior, thermal pad grounding requirement, and validated alternatives for ultrasound, CCD, and clock generation designs.

Technical Context

The ISL55111IRZ-T implements two independent CMOS drivers with complementary (anti-phase) output logic: IN-B is inverted while IN-A is non-inverted, enabling push-pull or differential timing control. Its input stage features tightly controlled hysteresis (0.2V) and logic thresholds (VIX_LH = 1.42V typ, VIX_HL = 1.22V typ) to minimize pulse-width distortion from slow input edges.

Output stage architecture uses rail-to-rail swing between GND and VH with low rDS(on) (3–6Ω), supporting fast switching into capacitive loads up to 680pF while maintaining <0.5ns channel-to-channel skew across -40°C to +85°C. Power-down (PD) and ENABLE pins provide dual-level control: PD reduces quiescent current to 12µA, while ENABLE (QFN-only) tri-states outputs without affecting internal logic.

Key Specifications

Parameter Value and Actual Design Meaning
VH Supply Range 5V to 13.2V - sets maximum output voltage swing; enables direct drive of 12V MOSFET gates without level-shifting.
Peak Output Current 3.5A - sustains fast edge rates into heavy capacitive loads (e.g., 330pF CCD lines) without droop or distortion.
Rise/Fall Time 1.2ns/1.4ns @ 100pF - ensures sub-nanosecond timing precision critical for high-resolution ultrasound beamforming.
Min Pulse Width 6ns - supports ultra-short gating pulses required in time-of-flight piezoelectric sensing.
Channel Skew <0.5ns - guarantees matched propagation delay between OA and OB outputs for synchronized dual-channel timing.
Logic Compatibility 3.3V/5V - interfaces directly with FPGA I/O, microcontroller GPIO, and ASIC control logic without external translators.
Operating Temp -40°C to +85°C - qualified for industrial and medical equipment environments including portable ultrasound systems.

Pinout & Package

ISL55111IRZ-T is supplied in a 16-lead 4×4 mm Exposed Pad QFN package (PKG DWG L16.4x4A). The exposed thermal pad (EP) is electrically connected to GND (Pin 11) and must be soldered to a PCB ground plane for thermal and electrical integrity.

Pin/Terminal Circuit Role Design Meaning
VDD (Pin 1) Logic supply input Powers internal input buffer and control logic; accepts 2.7–5.5V; requires local 0.1µF + 4.7µF bypassing.
VH (Pin 10) Driver high-rail supply Sets output high-voltage level (5–13.2V); supplies peak current to OA/OB; requires dedicated low-ESR bulk + ceramic decoupling.
GND (Pin 11) Common reference Returns both VDD and VH currents; tied internally to EP; must connect to solid ground plane to minimize noise coupling and skew.
PD (Pin 3) Power-down enable Active-high signal reducing total supply current to 12µA (IDD-PDN) + 2.5µA (IH_PDN); used for standby in battery-powered devices.
ENABLE (Pin 2) Output tri-state control QFN-only pin; low = normal operation, high = OA/OB forced high-impedance - enables dynamic bus sharing or fault isolation.
IN-A (Pin 5) Non-inverting input Directly controls OA output state (OA = IN-A); compatible with TTL/CMOS logic; rise/fall time <2ns recommended.
IN-B (Pin 4) Inverting input Controls OB output with inversion (OB = NOT IN-B); establishes anti-phase relationship essential for push-pull gate drive.
OA (Pin 9) Driver A output High-current CMOS output swinging from GND to VH; capable of sourcing/sinking 3.5A peak; connects to MOSFET gate or load.
OB (Pin 12) Driver B output Complementary output to OA; anti-phase behavior enables differential signaling, H-bridge pre-drive, or CCD phase clocks.

Key Features

Feature Design Value
Anti-phase dual outputs IN-B inversion ensures precise complementary timing between OA and OB - eliminates external inverters in push-pull or clock-phase applications.
Low-output impedance rDS(on) = 3–6Ω at VH = 12V - minimizes voltage drop under 3.5A peak load, preserving signal fidelity across wide temperature range.
Tightly controlled input thresholds VIX_LH = 1.42V ±0.1V, VIX_HL = 1.22V ±0.1V - suppresses pulse-width jitter caused by slow input transitions in noisy digital environments.
Integrated power-down and tri-state Separate PD and ENABLE pins allow hierarchical control: PD saves power globally; ENABLE isolates outputs dynamically during system reconfiguration.
Thermally enhanced QFN θJA = 45°C/W with proper PCB layout - enables sustained 50MHz operation into 330pF loads without exceeding +150°C junction limit.

Applications

Ultrasound Transducer Driver CCD Horizontal Shift Register

Use Scenario: Driving high-voltage piezoelectric elements in portable ultrasound probes requiring precise 5–12V pulsing at 1–10MHz.

IC Role / Device Role / Timing Role: Dual anti-phase gate driver generating complementary HV pulses to excite transmit/receive transducer pairs with sub-ns timing alignment.

Use Value: 6ns minimum pulse width and <0.5ns skew ensure clean acoustic pulse generation and echo sampling resolution down to 1mm.

Use Scenario: Clocking horizontal pixel shift registers in large-format CCD image sensors used in medical endoscopes and industrial inspection cameras.

IC Role / Device Role / Timing Role: High-current, low-skew dual driver delivering precisely timed, rail-to-rail clock phases (Φ1/Φ2) to advance charge packets across 4K+ pixel rows.

Use Value: 1.5ns rise/fall times and 3.5A peak drive sustain fast settling into 330pF+ line capacitance, enabling >30fps full-frame readout.

Clock Generation Circuit Piezoelectric Distance Sensor

Use Scenario: Generating high-fidelity, low-jitter clock signals for high-speed ADCs, DACs, or FPGA-based signal processing in test equipment.

IC Role / Device Role / Timing Role: Buffering and amplifying low-voltage logic clocks to robust 12V CMOS levels while preserving edge integrity and phase relationship.

Use Value: 5V–13.2V VH range and 3.5A drive capability eliminate need for discrete level-shifting stages, reducing board area and signal path complexity.

Use Scenario: Driving resonant piezoelectric transducers in industrial distance measurement systems operating at 40–200kHz with µs-level timing accuracy.

IC Role / Device Role / Timing Role: Delivering short, high-amplitude voltage pulses to excite transducers and generate acoustic bursts for time-of-flight calculation.

Use Value: 6ns minimum pulse width and tight input hysteresis ensure consistent burst duration and minimal jitter - critical for ±0.1mm measurement repeatability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual anti-phase MOSFET driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXDD614PI Single-channel, 4A peak, no ENABLE pin, SOIC-8 package; lacks anti-phase logic - requires external inverter for dual complementary output. Best suited for space-constrained single-output gate drive; not drop-in for dual anti-phase timing-critical systems like CCD clocks. Select when only one high-current output is needed and board layout favors SOIC; verify timing skew manually if paired with external inverter.
LM5112MYX/NOPB Dual non-inverting driver (no built-in inversion), 5A peak, 12V max VH, WSON-8; includes adjustable dead-time control but no PD or ENABLE. Targeted at synchronous buck gate drive; lacks native anti-phase mode - unsuitable for CCD horizontal clocks or ultrasound transmit/receive phasing. Prefer for power converter half-bridge pre-drive where independent control of both FETs is required; avoid for imaging timing applications needing inherent complementarity.

Compared with IXDD614PI and LM5112MYX/NOPB, the ISL55111IRZ-T uniquely integrates anti-phase logic, ENABLE tri-state, and power-down in a thermally optimized QFN - making it the only choice for compact, low-skew, multi-mode imaging and precision timing systems.

Availability

ISL55111IRZ-T is available at Aetrix Electronics and suitable for ultrasound imaging systems, CCD camera modules, and high-frequency clock generation circuits requiring stable component supply, RoHS-compliant packaging, and guaranteed -40°C to +85°C operation.

Supply support for ISL55111IRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and healthcare applications.

The ISL55111IRZ-T belongs to Renesas' high-speed driver product line, engineered specifically for precision pulse generation in medical imaging, scientific instrumentation, and high-resolution sensing systems where timing accuracy and output fidelity are critical.

FAQ

What is the function of the ENABLE pin on the ISL55111IRZ-T?

The ENABLE pin (Pin 2) is exclusive to the QFN package and provides hardware-level output tri-state control. When ENABLE is driven high, both OA and OB outputs enter high-impedance state regardless of IN-A/IN-B states - enabling dynamic bus sharing, fault containment, or safe hot-plug operation. ISL55111IRZ-T requires ENABLE to be pulled low for normal anti-phase driver operation.

Does the ISL55111IRZ-T support 3.3V logic inputs with a 12V VH supply?

Yes. The ISL55111IRZ-T is fully compatible with 3.3V logic families across its specified VDD range (2.7–5.5V). Input thresholds (VIX_LH = 1.42V typ, VIX_HL = 1.22V typ) and hysteresis (0.2V) ensure reliable switching even with marginal 3.3V signals, while VH = 12V allows full rail-to-rail output swing - a key capability of the ISL55111IRZ-T in mixed-voltage systems.

How does the anti-phase functionality of the ISL55111IRZ-T differ from the ISL55110?

The ISL55111IRZ-T has an inverted IN-B input, causing OB to be the logical complement of IN-B, while OA follows IN-A directly - producing inherently anti-phase outputs. In contrast, the ISL55110 drives both OA and OB non-inverted, yielding in-phase outputs. This architectural difference makes ISL55111IRZ-T ideal for push-pull, differential clocking, or CCD Φ1/Φ2 generation without external logic.

What is the correct PCB layout practice for the exposed thermal pad on the ISL55111IRZ-T?

The exposed pad (EP) of the ISL55111IRZ-T is electrically connected to GND (Pin 11) and must be soldered to a solid PCB ground plane using a minimum 9×9 array of thermal vias (0.3mm diameter, 0.8mm pitch) to a dedicated inner-layer ground plane. This ensures both thermal dissipation (θJA = 45°C/W) and low-inductance return path - critical for minimizing ground bounce and skew in high-speed operation of the ISL55111IRZ-T.

Can the ISL55111IRZ-T drive a 680pF capacitive load while maintaining specified timing performance?

Yes. The ISL55111IRZ-T is characterized for CL = 680pF loads: tR = 6.2ns and tF = 6.9ns (typical, VH = 12V, VDD = 3.6V), with tpdR/tpdF ≤14.5ns and skew <0.5ns. These values are measured per Figure 3 in the FN6228 datasheet and confirmed over -40°C to +85°C - validating ISL55111IRZ-T for large-area CCD arrays and high-density bus driving where load capacitance exceeds 500pF.

ISL55111IRZ-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
16-TFQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Output Configuration:
Half Bridge (2)
Applications:
Digital Imaging
Interface:
Logic
Load Type:
Capacitive and Resistive
Technology:
Power MOSFET
Rds On (Typ):
3Ohm
Current - Output / Channel:
100mA
Current - Peak Output:
3.5A
Voltage - Supply:
2.7V ~ 5.5V
Voltage - Load:
5V ~ 13.2V
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Features:
-
Fault Protection:
-
Mounting Type:
Surface Mount
Supplier Device Package:
16-QFN (4x4)

ISL55111IRZ-T FAQ

1.How can I place an order for ISL55111IRZ-T through Aetrix?

Please submit a Request for Quotation (RFQ) for ISL55111IRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISL55111IRZ-T reliable?

The price and inventory of ISL55111IRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL55111IRZ-T is usually 5 days.

3.What payment methods are accepted for ISL55111IRZ-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL55111IRZ-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISL55111IRZ-T?

ISL55111IRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISL55111IRZ-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISL55111IRZ-T?

For technical support, including ISL55111IRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL55111IRZ-T requirements.

6.How does Aetrix verify that ISL55111IRZ-T is sourced from the original manufacturer or authorized distributors?

All ISL55111IRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL55111IRZ-T meets industry standards.

7.What is the process for return or replacement of ISL55111IRZ-T?

All ISL55111IRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL55111IRZ-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISL55111IRZ-T part is unused and in its original packaging.

Return procedure for ISL55111IRZ-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ISL55111IRZ-T Tags

  • ISL55111IRZ-T
  • ISL55111IRZ-T PDF
  • ISL55111IRZ-T Datasheet
  • ISL55111IRZ-T Specifications
  • ISL55111IRZ-T Images
  • Renesas
  • Renesas ISL55111IRZ-T
  • Buy ISL55111IRZ-T
  • ISL55111IRZ-T Price
  • ISL55111IRZ-T Distributor
  • ISL55111IRZ-T Supplier
  • ISL55111IRZ-T Wholesale
Related Products
NCP1393BDR2G
NCP1393BDR2G

onsemi

A3909GLNTR-T
A3909GLNTR-T

Allegro MicroSystems

NCP51530BDR2G
NCP51530BDR2G

onsemi

A3909GLYTR-T
A3909GLYTR-T

Allegro MicroSystems

SIC631CD-T1-GE3
SIC631CD-T1-GE3

Vishay Siliconix

BTN70301EPAXUMA1
BTN70301EPAXUMA1

Infineon Technologies

TDA21520AUMA1
TDA21520AUMA1

Infineon Technologies

AOZ5116QI
AOZ5116QI

Alpha & Omega Semiconductor Inc.

IRSM005-301MHTR
IRSM005-301MHTR

Infineon Technologies

IRSM005-301MH
IRSM005-301MH

Infineon Technologies

MP6610GJ-Z
MP6610GJ-Z

Monolithic Power Systems Inc.

DRV8908QPWPRQ1
DRV8908QPWPRQ1

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER