Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas ISL99140IRZ-T

Part No.:
ISL99140IRZ-T
Manufacturer:
Renesas
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
40-VFQFN Exposed Pad
Datasheet:
AetrixISL99140IRZ-T.pdf
Description:
IC HALF BRIDGE DRIVER 40A 40QFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,195

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

ISL99140IRZ-T from Renesas (formerly Intersil) is a 40A DrMOS power module integrating high-side and low-side MOSFETs, gate driver, bootstrap diode, and thermal warning output. It supports 3-state 3.3V PWM input, diode emulation for light-load efficiency, adaptive shoot-through protection, and operates up to 2MHz switching frequency in core voltage regulation for microprocessors.

For engineers reviewing the ISL99140IRZ-T datasheet, ISL99140IRZ-T pinout, ISL99140IRZ-T application, or ISL99140IRZ-T equivalent, key selection criteria include its 40A continuous current rating, 6×6 mm QFN package with exposed thermal pad, tri-state PWM compatibility with digital controllers (e.g., ISL68/69xxx, ZL8802), and thermal flag signaling at 150°C junction temperature.

Technical Context

The ISL99140IRZ-T implements a synchronous buck power stage with integrated FET driver logic that interprets 3-state PWM commands to control high-side (GH) and low-side (GL) MOSFETs. Its adaptive shoot-through protection monitors GH–SW and GL node voltages to enforce safe dead-time, while internal 20kΩ high-side gate-to-source resistor prevents self-turn-on during high dV/dt events on VIN.

Diode emulation is enabled via SMOD pin (active-low), allowing discontinuous conduction mode (DCM) entry at light loads with minimum GL on-time of 350ns. Thermal warning (THDN) is an open-drain output asserting low at 150°C junction temperature and clearing at 135°C, providing system-level thermal management without halting operation.

Key Specifications

ParameterValue and Actual Design Meaning
Average Output Current40A continuous - defines maximum sustained load current before thermal derating or shutdown
PWM Input Logic3-state 3.3V compatible - enables robust fault response with tri-state hold-off time of 75–225ns
Switching FrequencyUp to 2MHz - supports high-density VR designs with smaller magnetics and faster transient response
Thermal Warning Threshold150°C set / 135°C clear - provides 15°C hysteresis for stable thermal flag signaling without chatter
Package40-lead 6×6 mm QFN with exposed thermal pad - enables low θJC = 5°C/W for efficient heat transfer to PCB
Diode Emulation ControlSMOD pin with 10μA internal pull-up - allows immediate DCM activation or forced CCM by external logic
Bootstrap DiodeIntegrated Schottky - eliminates external bootstrap diode, reducing BOM count and layout area

Pinout & Package

ISL99140IRZ-T uses a 40-lead, 6×6 mm, 0.5 mm pitch thin quad flat no-lead (QFN) package with exposed thermal pad (PKG DWG L40.6x6A). The package features three ground domains: AGND (logic ground), PGND (power ground), and multiple VIN/SW/PHASE connections optimized for low-inductance power loop routing.

Pin/TerminalCircuit RoleDesign Meaning
1 SMODDiode emulation enableActive-low input; 10μA internal pull-up ensures CCM if left floating
2 VCCLogic bias supply+5V ±5% supply for internal logic; requires local 1μF ceramic decoupling to AGND
3 PVCCDriver bias supply+5V ±5% supply for gate drivers; shares decoupling capacitor with VCC in typical layout
4 BOOTHigh-side gate bootstrapFloating supply for GH driver; requires 0.1–0.22μF ceramic cap to PHASE
5,37,PAD1 AGNDLogic ground returnDirect connection to system ground plane; separate from PGND to minimize noise coupling
6 GHHigh-side gate drive outputTest/monitor point only; no external connection required
7 PHASEBootstrap return nodeInternally tied to SW; external connection not needed
8–14, PAD2 VINMain power input10× parallel connections for low-impedance 12V input path; requires multiple 10μF + 0.1μF ceramics to PGND
15–35, PAD3 SWSwitch node11× parallel connections to inductor; carries full AC switching current; must be routed short and wide
16–28 PGNDPower ground return13× parallel connections to system ground plane; critical for thermal and EMI performance
36 GLLow-side gate drive outputTest/monitor point only; no external connection required
38 THDNThermal warning flagOpen-drain output; pulls low at 150°C junction temp; requires external pull-up resistor
39 ENEnable input2μA internal weak pull-down; high = active, low = force both FETs off regardless of PWM state
40 PWMThree-state PWM inputAccepts 3.3V logic with tri-state window (1.1–1.5V rising / 1.6–1.95V falling); compatible with ISL68/69xxx and ZL8802

Key Features

FeatureDesign Value
Intel DrMOS Rev 4.0 CompliantMeets specification for multiphase VRM/VRD applications including timing, interface, and thermal behavior
Adaptive Shoot-Through ProtectionDynamically adjusts dead-time based on GH–SW and GL node transitions to prevent cross-conduction under varying load and temperature
Integrated Bootstrap Schottky DiodeEliminates discrete bootstrap diode, reducing component count and PCB area while maintaining reliable high-side gate drive
Undervoltage Lockout (UVLO)Enables operation only when VCC exceeds 3.40V and disables below 2.92V, preventing erratic gate drive during brown-out
High dV/dt ImmunityIntegrated 20kΩ high-side gate-to-source resistor suppresses false turn-on during fast-rising VIN transients

Applications

Core Voltage RegulationGPU Power Delivery

Use Scenario: Regulating 1.0V–1.8V core supply for high-performance x86 microprocessors in servers and workstations.

IC Role / Device Role / Timing Role: Primary power stage in multiphase VRM, synchronized to controller PWM with sub-100ns propagation delays.

Use Value: Delivers 40A per phase with <1.5% output voltage ripple at 2MHz, enabling compact VRM designs meeting Intel VRD13/14 specs.

Use Scenario: Providing dynamic, high-current power to discrete graphics processing units in gaming PCs and AI accelerators.

IC Role / Device Role / Timing Role: High-bandwidth POL converter responding to GPU load transients within 100ns via fast PWM edge detection.

Use Value: Diode emulation maintains >90% efficiency at 5A load, while thermal warning (THDN) feeds back to GPU controller for proactive throttling.

Memory Subsystem VRCloud Computing POL Converter

Use Scenario: Supplying DDR4/DDR5 memory rails (1.2V/1.1V) in high-density rack servers with strict thermal budgets.

IC Role / Device Role / Timing Role: Compact, thermally optimized power stage placed adjacent to memory modules to minimize IR drop and noise coupling.

Use Value: 6×6 mm QFN package with 5°C/W θJC enables operation at 85°C ambient without derating, supporting fanless server configurations.

Use Scenario: Distributed point-of-load conversion for ASICs and FPGAs in hyperscale data center switches and NICs.

IC Role / Device Role / Timing Role: Single-phase or paralleled DrMOS stage controlled by ZL8802 or ISL68201 for PMBus-configurable output voltage and margining.

Use Value: Tri-state PWM compatibility allows seamless integration with digital controllers for phase shedding and dynamic frequency scaling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DrMOS power stage applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ISL99227BIRZ-T60A rating, adds IMON/TMON/OCP flags, 5×5 mm package, supports 3.3V and 5V PWMTargeted at higher-current CPU cores and systems requiring current monitoring and over-temperature reportingSelect ISL99227BIRZ-T when >40A per phase or additional telemetry (IMON, TMON) is required; not pin-compatible due to different pin count and layout
SiC454CD-T1-GE340A rating, 3.3V PWM, integrated current sense, 6×6 mm QFN, RoHS-compliantDesigned for enterprise SSDs and telecom POL where current sensing and tighter DC accuracy are prioritizedChoose SiC454CD-T1-GE3 if integrated current sense (±1.5% gain error) and lower quiescent current (120μA VCC standby) are critical; pinout differs in SW/VIN distribution

Compared with ISL99140IRZ-T, ISL99227BIRZ-T offers higher current and telemetry but requires PCB redesign, while SiC454CD-T1-GE3 provides current sensing at similar current rating but with distinct pin assignment and no thermal warning output.

Availability

ISL99140IRZ-T is available at Aetrix Electronics and suitable for high-frequency VRM, GPU power delivery, and cloud computing POL applications requiring stable component supply across industrial temperature range (-40°C to +85°C) and long-term production continuity.

Supply support for ISL99140IRZ-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (acquired Intersil in 2017) is a global semiconductor leader delivering high-performance analog, power management, and embedded processing solutions for industrial, automotive, and data infrastructure markets.

The ISL99140IRZ-T belongs to Renesas' DrMOS power stage product line, engineered specifically for high-efficiency, high-density voltage regulation in advanced microprocessor, GPU, and memory subsystems operating at frequencies up to 2MHz.

FAQ

What is the maximum continuous output current supported by the ISL99140IRZ-T?

The ISL99140IRZ-T supports 40A average output current continuously under proper thermal management. This rating assumes adequate PCB copper area, airflow, and adherence to recommended operating conditions including ambient temperature ≤+85°C and junction temperature ≤+125°C. Derating applies above 85°C ambient or with insufficient heatsinking.

Does the ISL99140IRZ-T require an external bootstrap diode?

No, the ISL99140IRZ-T integrates a Schottky bootstrap diode internally. This eliminates the need for an external diode, simplifying layout and reducing BOM count. A 0.1–0.22μF ceramic capacitor must still be placed between BOOT and PHASE pins, and a series resistor (1.5–3.9Ω) is recommended for high-VIN applications to limit peak bootstrap current.

How does the thermal warning (THDN) pin function on the ISL99140IRZ-T?

The THDN pin on the ISL99140IRZ-T is an open-drain output that asserts low when the internal junction temperature reaches 150°C and clears (goes high-impedance) when temperature drops to 135°C. It does not shut down the device but signals impending thermal failure to the controller, enabling system-level thermal management. An external pull-up resistor is required.

Can the ISL99140IRZ-T operate with a 5V PWM controller?

The ISL99140IRZ-T is designed for 3.3V PWM logic and is not compatible with 5V PWM controllers such as the ISL637x family. Its tri-state thresholds (1.1–1.5V rising / 1.6–1.95V falling) are optimized for 3.3V systems. For 5V PWM compatibility, use the ISL99125B or ISL99135B families instead.

What is the purpose of the SMOD pin on the ISL99140IRZ-T?

The SMOD pin on the ISL99140IRZ-T controls diode emulation mode: pulled low to enable DCM for improved light-load efficiency, or held high to force continuous conduction mode (CCM). With 10μA internal pull-up, leaving SMOD unconnected defaults to CCM. Response is immediate upon state change, independent of PWM timing.

ISL99140IRZ-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
40-VFQFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Output Configuration:
Half Bridge
Applications:
DC-DC Converters
Interface:
PWM
Load Type:
Inductive
Technology:
DrMOS
Rds On (Typ):
-
Current - Output / Channel:
40A
Current - Peak Output:
-
Voltage - Supply:
4.75V ~ 5.25V
Voltage - Load:
4.5V ~ 18V
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Features:
Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection:
Over Temperature, Shoot-Through, UVLO
Mounting Type:
Surface Mount
Supplier Device Package:
40-QFN (6x6)

ISL99140IRZ-T FAQ

1.How can I place an order for ISL99140IRZ-T through Aetrix?

Please submit a Request for Quotation (RFQ) for ISL99140IRZ-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISL99140IRZ-T reliable?

The price and inventory of ISL99140IRZ-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISL99140IRZ-T is usually 5 days.

3.What payment methods are accepted for ISL99140IRZ-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISL99140IRZ-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISL99140IRZ-T?

ISL99140IRZ-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISL99140IRZ-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISL99140IRZ-T?

For technical support, including ISL99140IRZ-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISL99140IRZ-T requirements.

6.How does Aetrix verify that ISL99140IRZ-T is sourced from the original manufacturer or authorized distributors?

All ISL99140IRZ-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISL99140IRZ-T meets industry standards.

7.What is the process for return or replacement of ISL99140IRZ-T?

All ISL99140IRZ-T units undergo pre-shipment inspection (PSI). If there is an issue with ISL99140IRZ-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISL99140IRZ-T part is unused and in its original packaging.

Return procedure for ISL99140IRZ-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

ISL99140IRZ-T Tags

  • ISL99140IRZ-T
  • ISL99140IRZ-T PDF
  • ISL99140IRZ-T Datasheet
  • ISL99140IRZ-T Specifications
  • ISL99140IRZ-T Images
  • Renesas
  • Renesas ISL99140IRZ-T
  • Buy ISL99140IRZ-T
  • ISL99140IRZ-T Price
  • ISL99140IRZ-T Distributor
  • ISL99140IRZ-T Supplier
  • ISL99140IRZ-T Wholesale
Related Products
NCP1393BDR2G
NCP1393BDR2G

onsemi

A3909GLNTR-T
A3909GLNTR-T

Allegro MicroSystems

NCP51530BDR2G
NCP51530BDR2G

onsemi

A3909GLYTR-T
A3909GLYTR-T

Allegro MicroSystems

SIC631CD-T1-GE3
SIC631CD-T1-GE3

Vishay Siliconix

BTN70301EPAXUMA1
BTN70301EPAXUMA1

Infineon Technologies

TDA21520AUMA1
TDA21520AUMA1

Infineon Technologies

AOZ5116QI
AOZ5116QI

Alpha & Omega Semiconductor Inc.

IRSM005-301MHTR
IRSM005-301MHTR

Infineon Technologies

IRSM005-301MH
IRSM005-301MH

Infineon Technologies

MP6610GJ-Z
MP6610GJ-Z

Monolithic Power Systems Inc.

DRV8908QPWPRQ1
DRV8908QPWPRQ1

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER