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Texas Instruments LM2005DR
- Part No.:
- LM2005DR
- Manufacturer:
- Texas Instruments
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
LM2005DR.pdf
- Description:
- 105-V, 0.5-A/0.8-A HALF-BRIDGE G
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
LM2005DR from Texas Instruments is a high-voltage half-bridge gate driver IC designed to control two N-channel MOSFETs in synchronous buck or half-bridge topologies. It delivers 0.5-A peak source / 0.8-A peak sink output current, features integrated bootstrap diode, 8-V typical GVDD undervoltage lockout (UVLO), and supports up to 107-V BST absolute maximum voltage. It is used in cordless power tools and e-bike motor drives where compact size and robust negative transient handling on SH (–19.5 V) are critical.
For engineers reviewing the LM2005DR datasheet, LM2005DR pinout, LM2005DR application, or LM2005DR equivalent, this page provides verified technical context, validated pin functions, real-world switching performance (115-ns propagation delay), thermal metrics for SOIC-8 and WSON-8 packages, and confirmed alternative drivers with documented functional trade-offs.
Technical Context
The LM2005DR implements independent TTL/CMOS-compatible INH and INL inputs driving separate high-side (GH) and low-side (GL) gate outputs referenced to SH and GND respectively. Its level-shifting architecture enables reliable high-side operation up to 105-V BST–SH, with UVLO monitoring both GVDD and BST rails independently.
It integrates a bootstrap diode with 0.6-V low-current forward voltage and 2.1-V high-current forward voltage, plus dynamic resistance of 12.5 Ω. The SH pin tolerates –1-V DC and –19.5-V transient negative voltage, enabling stable operation in noisy motor-drive environments without external clamping diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | 0.5-A peak source / 0.8-A peak sink per channel - sufficient to drive 17-nC gate charge MOSFETs at 50-kHz switching frequency with margin. |
| Propagation Delay | 115-ns typical - ensures tight timing alignment between GH and GL edges for reduced shoot-through risk in half-bridge PWM control. |
| BST Absolute Max Voltage | 107-V - allows use in 80-V nominal bus systems (e.g., 36-V/48-V e-bikes) with headroom for voltage spikes. |
| SH Negative Transient Rating | –19.5-V (repetitive pulse <100 ns) - withstands parasitic ringing during fast MOSFET turn-off without latch-up or damage. |
| GVDD UVLO Threshold | 8.15–8.75-V rising / 6.75–7.7-V falling - prevents erratic output behavior during brown-out conditions with 0.45-V hysteresis. |
| Bootstrap Diode VF | 0.6-V @ 100 µA / 2.1-V @ 100 mA - reduces bootstrap capacitor charging loss and improves efficiency vs discrete diode solutions. |
| Package Options | SOIC-8 (4.9 × 3.91 mm) and WSON-8 (2.0 × 2.0 mm) - thermally enhanced layouts support placement near motor phases for minimal loop inductance. |
Pinout & Package
LM2005DR is available in an 8-pin SOIC package (D) with standard industry pinout compatibility. The exposed pad variant (DSG/WSON) is not applicable to the DR suffix; only SOIC-8 applies.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - GVDD | Low-side gate driver supply rail | Must be decoupled locally with low-ESR/ESL capacitor; powers GL stage and internal logic; UVLO monitored here. |
| 2 - INH | High-side input control signal | TTL/CMOS-compatible; unused pin must be tied to GND - floating state forces GH low. |
| 3 - INL | Low-side input control signal | TTL/CMOS-compatible; unused pin must be tied to GND - floating state forces GL low. |
| 4 - GND | Reference ground for all signals | Common return path for GVDD, INH, INL, and GL; must connect to PCB ground plane with low-inductance routing. |
| 5 - GL | Low-side gate driver output | Drives gate of low-side N-MOSFET; referenced to GND; 0.25-V low-level output ensures full MOSFET turn-off. |
| 6 - SH | High-side source node connection | Connects to source of high-side MOSFET and negative terminal of bootstrap capacitor; handles –19.5-V transients. |
| 7 - GH | High-side gate driver output | Drives gate of high-side N-MOSFET; referenced to SH; 0.25-V low-level output relative to SH ensures clean turn-off. |
| 8 - BST | High-side gate driver supply rail | Connects to positive terminal of bootstrap capacitor; UVLO monitored between BST and SH; max 107-V rating. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | Eliminates external diode, reducing BOM count and PCB area while maintaining 2.1-V forward drop at 100 mA for efficient charging. |
| Independent dual UVLO | Separate GVDD and BST–SH UVLO circuits prevent high-side misfire during bootstrap capacitor discharge while keeping low-side operational. |
| Robust SH transient tolerance | –19.5-V negative pulse rating enables direct use in high-dV/dt motor phases without added Schottky clamping diodes. |
| Matched propagation delay | 115-ns typical tDLFF/tDHFF with ≤30-ns delay matching ensures precise dead-time control when implemented externally via MCU. |
| Thermally optimized SOIC-8 | RθJA = 133.2°C/W enables 1.2-W continuous dissipation at 25°C ambient - suitable for sealed tool enclosures without forced airflow. |
Applications
| Cordless Power Tools | E-Bike Motor Control |
|---|---|
Use Scenario: Driving 48-V BLDC motors in handheld drills and angle grinders with rapid acceleration/deceleration cycles. IC Role / Device Role: Half-bridge gate driver controlling high- and low-side N-MOSFETs; manages bootstrap voltage generation and UVLO protection during battery sag. Use Value: Integrated bootstrap diode reduces component count by one part; –19.5-V SH rating prevents false triggering during commutation-induced ringing. |
Use Scenario: Controlling hub or mid-drive PMSM motors in 36–48-V e-bikes under regenerative braking and hill-climbing loads. IC Role / Device Role: High-side/low-side gate driver in 3-phase inverter half-bridge leg; interfaces with MCU PWM and monitors bus voltage integrity. Use Value: 107-V BST rating accommodates 80-V transients on 48-V bus; 115-ns propagation delay enables >100-kHz PWM for smooth torque delivery. |
| Cordless Vacuum Cleaners | Battery Test Equipment |
Use Scenario: Powering high-RPM brushless motors in portable vacuums requiring compact, thermally efficient driver layout. IC Role / Device Role: Gate driver in half-bridge configuration driving 20-A peak motor currents; placed adjacent to MOSFETs to minimize gate loop inductance. Use Value: WSON-8 option (not DR) offers 78.2°C/W RθJA; SOIC-8 (LM2005DR) provides proven manufacturability and thermal derating margin. |
Use Scenario: Simulating dynamic load profiles on Li-ion battery packs using programmable switching elements. IC Role / Device Role: Fast-switching gate driver controlling MOSFET-based electronic loads; requires precise timing and rail monitoring. Use Value: Independent INH/INL inputs allow asynchronous control; GVDD/BST UVLO prevents unsafe switching during test sequence transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27211DR | Higher 4-A peak output current; no integrated bootstrap diode; 120-V BST rating; 10-ns faster propagation delay. | Requires external bootstrap diode and larger gate resistors; better suited for high-frequency (>200-kHz) SMPS than motor drives. | Select UCC27211DR when higher drive strength and speed are needed, and board space permits adding discrete diode and RC network. |
| IRS2005STRPBF | Lower 0.35-A/0.65-A peak output; no integrated bootstrap diode; 100-V BST rating; 250-ns propagation delay. | Lacks SH negative transient rating; requires external bootstrap diode and gate resistors; older process with higher RθJA (160°C/W). | Choose IRS2005STRPBF only for cost-sensitive, lower-performance applications where 115-ns timing and –19.5-V SH tolerance are not required. |
Compared with UCC27211DR and IRS2005STRPBF, LM2005DR uniquely balances integrated bootstrap functionality, robust SH transient immunity, and SOIC-8 manufacturability - making it optimal for space-constrained, noise-prone motor-control designs where reliability trumps raw speed.
Availability
LM2005DR is available at Aetrix Electronics and suitable for cordless power tools, e-bike motor controllers, and battery test equipment requiring stable component supply across industrial production lifecycles.
Supply support for LM2005DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with over 90 years of innovation in power management and motor control ICs.
The LM2005DR belongs to TI's high-voltage gate driver product line, engineered specifically for ruggedized half-bridge motor-drive applications demanding integrated bootstrap diodes, wide supply range, and transient-hardened pin structures.
FAQ
What is the function of the SH pin on the LM2005DR?
The SH (Source High-side) pin on the LM2005DR serves as the reference node for the high-side gate driver output (GH) and connects to the source terminal of the external high-side N-MOSFET. It also forms the negative terminal of the bootstrap capacitor. Critically, the LM2005DR supports –19.5-V transient voltage on SH, allowing it to withstand parasitic ringing during fast switching without requiring external clamping components. This capability is essential for reliable operation in BLDC motor drives where the SH node experiences rapid dV/dt transitions.
Does the LM2005DR require an external bootstrap diode?
No, the LM2005DR does not require an external bootstrap diode because it integrates a high-current bootstrap diode internally. This diode has a forward voltage of 0.6 V at 100 µA and 2.1 V at 100 mA, with a dynamic resistance of 12.5 Ω. Integration eliminates one external component, reduces PCB footprint, lowers system cost, and improves reliability by removing solder joint and layout-dependent variables. The LM2005DR datasheet explicitly confirms this feature in both the Features and Description sections.
What are the UVLO thresholds for GVDD and BST on the LM2005DR?
The LM2005DR features dual independent undervoltage lockout (UVLO) circuits. For GVDD, the rising threshold is 8.15–8.75 V and the falling threshold is 6.75–7.7 V, with 0.45-V hysteresis. For BST (measured relative to SH), the rising threshold is 7.6–8.5 V and the falling threshold is 6.25–7.15 V, also with 0.45-V hysteresis. These thresholds ensure that the low-side output (GL) remains disabled until GVDD is stable, while the high-side output (GH) is disabled only if BST–SH falls below its UVLO threshold - preserving partial functionality during bootstrap capacitor discharge events.
Can the LM2005DR drive both high-side and low-side MOSFETs simultaneously?
No, the LM2005DR does not support simultaneous conduction of high-side and low-side MOSFETs. Its logic follows standard half-bridge behavior: INH = H and INL = L enables GH while disabling GL; INH = L and INL = H enables GL while disabling GH; INH = INL = L keeps both outputs low; INH = INL = H drives both high. There is no built-in dead-time circuitry - dead time must be enforced externally via the controller (e.g., MCU or PWM generator) to prevent shoot-through. This design gives designers full timing control while minimizing propagation delay penalty.
What package types are available for the LM2005DR?
The LM2005DR is specified and orderable exclusively in the 8-pin SOIC (D) package with body dimensions of 4.90 mm × 3.91 mm. While the LM2005 family also includes a WSON-8 (DSG) variant, the "DR" suffix denotes the SOIC-8 version per TI's official orderable addendum and packaging documentation. The SOIC-8 variant offers industry-standard pinout compatibility, mature assembly processes, and a junction-to-ambient thermal resistance (RθJA) of 133.2°C/W - suitable for thermally constrained motor-control PCBs.
LM2005DR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
- Half Bridge
- Applications:
- General Purpose
- Interface:
- Logic, PWM
- Load Type:
- Inductive, Capacitive, Resistive
- Technology:
- Power MOSFET, IGBT
- Rds On (Typ):
- -
- Current - Output / Channel:
- 500mA, 800mA
- Current - Peak Output:
- 500mA, 800mA
- Voltage - Supply:
- 9V ~ 18V
- Voltage - Load:
- 9V ~ 18V
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Features:
- Bootstrap Circuit
- Fault Protection:
- UVLO
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
LM2005DR FAQ
1.How can I place an order for LM2005DR through Aetrix?
Please submit a Request for Quotation (RFQ) for LM2005DR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for LM2005DR reliable?
The price and inventory of LM2005DR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for LM2005DR is usually 5 days.
3.What payment methods are accepted for LM2005DR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for LM2005DR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for LM2005DR?
LM2005DR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your LM2005DR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for LM2005DR?
For technical support, including LM2005DR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your LM2005DR requirements.
6.How does Aetrix verify that LM2005DR is sourced from the original manufacturer or authorized distributors?
All LM2005DR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that LM2005DR meets industry standards.
7.What is the process for return or replacement of LM2005DR?
All LM2005DR units undergo pre-shipment inspection (PSI). If there is an issue with LM2005DR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LM2005DR part is unused and in its original packaging.
Return procedure for LM2005DR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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