Texas Instruments LM2005DSGR

Overview

LM2005DSGR from Texas Instruments is a high-voltage half-bridge gate driver IC designed to control two N-channel MOSFETs in synchronous buck or half-bridge topologies. It features integrated bootstrap diode, 8-V typical GVDD UVLO, 107-V BST absolute maximum rating, –19.5-V transient negative voltage tolerance on SH, and 0.5-A/0.8-A peak source/sink output drive capability. It targets compact, noise-resilient motor drive systems such as cordless power tools and e-bike inverters.

For engineers reviewing the LM2005DSGR datasheet, LM2005DSGR pinout, LM2005DSGR application, or LM2005DSGR equivalent, this page delivers verified technical context, package-specific pin functions, real-world switching performance metrics (115-ns propagation delay, 28-ns rise time), thermal characteristics for WSON-8 layout, and validated alternative options for BLDC/PMSM gate drive designs.

Technical Context

The LM2005DSGR implements independent TTL/CMOS-compatible INH and INL inputs with no built-in dead time-timing must be managed externally. Its floating high-side driver uses a robust level shifter referenced to SH, enabling operation up to 105 V BST–SH while maintaining tight delay matching (≤30 ns between GL and GH transitions).

UVLO protection operates separately on GVDD (8.15–8.75 V rising threshold) and BST–SH (7.6–8.5 V rising threshold), each with 0.45-V hysteresis. The SH pin tolerates –1-V DC and –19.5-V <100-ns transients, improving immunity in high-dV/dt motor phase nodes.

Key Specifications

Pinout & Package

The LM2005DSGR uses an 8-pin WSON package (2.00 mm × 2.00 mm) with exposed thermal pad soldered to PCB ground plane for enhanced thermal dissipation (RθJB = 44.6°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with LM5109BSDX/NOPB and UCC27211DRCR, the LM2005DSGR uniquely combines WSON-8 footprint, integrated bootstrap diode, and –19.5-V SH transient tolerance-making it optimal for cost- and space-sensitive 48-V BLDC systems where reliability under electrical stress is critical.

Availability

LM2005DSGR is available at Aetrix Electronics and suitable for cordless power tools, e-bike motor controllers, and battery test equipment requiring stable component supply, long-term production continuity, and RoHS-compliant packaging.

Supply support for LM2005DSGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions, with leadership in power management, signal chain, and motor control ICs.

The LM2005 product line is engineered for high-voltage, high-efficiency motor drive applications-specifically targeting compact, thermally constrained half-bridge gate drive needs in battery-powered tools and mobility systems.

FAQ

What is the maximum recommended switching frequency for LM2005DSGR in a half-bridge configuration?

The LM2005DSGR supports reliable operation up to 100 kHz, as confirmed by its 28-ns rise time (GL/GH, CLOAD = 1000 pF) and 115-ns propagation delay. At 50 kHz, typical operating currents are 0.56 mA (GVDD) and 0.16 mA (BST), ensuring thermal stability in WSON-8 layout. For frequencies above 100 kHz, layout optimization and gate resistor tuning are essential to manage ringing and EMI. The LM2005DSGR datasheet specifies performance up to 1 MHz in characterization, but 100 kHz is the validated design limit for sustained industrial use.

Does LM2005DSGR require external bootstrap components, and what capacitor value is recommended?

Yes, LM2005DSGR requires an external bootstrap capacitor between BST and SH, but eliminates the need for an external bootstrap diode due to its integrated diode. TI recommends a 100-nF X7R ceramic capacitor rated for ≥25 V, placed as close as possible to BST and SH pins. This value provides margin beyond the calculated minimum (10.8 nF) to handle pulse-skipping events and maintain VBST–SH above the 7.6-V UVLO threshold across temperature and load transients. A 1-µF X7R capacitor is also required on GVDD.

How does the SH pin's –19.5-V transient rating impact PCB layout for LM2005DSGR?

That rating means the LM2005DSGR can safely withstand short-duration (<100 ns) negative excursions on SH down to –19.5 V, common during high-dV/dt switching in motor phases. To leverage this, minimize SH trace inductance: use short, wide copper pours directly connecting SH to the MOSFET source and bootstrap capacitor negative terminal; avoid vias or connectors in the SH path; and place the LM2005DSGR adjacent to the power stage. This preserves the IC's intrinsic robustness without needing external Schottky clamps-reducing component count and layout complexity.

Can LM2005DSGR drive both high-side and low-side MOSFETs simultaneously, and what logic states enable that?

No-LM2005DSGR does not support simultaneous high- and low-side conduction. Its INH and INL inputs operate independently, but Table 7-3 shows that when INH = H and INL = H, both GH and GL go high, which would cause shoot-through. Valid states are: (INH=L, INL=H) → GL=H, GH=L; (INH=H, INL=L) → GH=H, GL=L; (INH=L, INL=L) → both outputs low. Dead time must be enforced in the MCU firmware or external logic; the LM2005DSGR itself has no internal blanking or interlock.

What thermal derating guidance applies to LM2005DSGR in its WSON-8 package?

With RθJB = 44.6°C/W and max TJ = 125°C, the LM2005DSGR dissipates up to ~1.5 W continuously on a standard 2-layer 1-oz copper PCB with full thermal pad soldering. At ambient 85°C, usable power drops to ~0.9 W. Derate linearly above 85°C ambient: subtract 22 mW/°C. Layout best practices include connecting the exposed pad to a ≥250 mm² internal or external ground plane, using ≥4 thermal vias (0.3-mm diameter), and avoiding component placement over the pad's thermal path.