Texas Instruments LMG2100R044RARR

Overview

LMG2100R044 from Texas Instruments is a 90V continuous, 100V pulsed, 35A GaN half-bridge power stage integrating 4.4mΩ high-side and low-side enhancement-mode GaN FETs with a monolithic 90V GaN gate driver. It delivers 10MHz switching capability, 33ns typical propagation delay, and internal bootstrap voltage clamping at 5V - enabling high-efficiency, high-density synchronous buck, LLC, and telecom power supplies.

For engineers reviewing the LMG2100R044 datasheet, LMG2100R044 pinout, LMG2100R044 application, or LMG2100R044 equivalent, this page provides verified technical context on GaN FET R_DS(on), UVLO thresholds, slew-rate control, thermal resistance (R_θJC(top) = 0.7°C/W), and layout-critical pin assignments for minimizing power loop inductance in >1MHz converters.

Technical Context

The LMG2100R044 integrates two matched 100V GaN HEMTs and a high-frequency level-shifted driver in a single VQFN-17 package, eliminating bond wires to reduce parasitic inductance. Its TTL-compatible HI/LI inputs support both 3.3V and 5V logic regardless of V_CC voltage, and its internal bootstrap clamp maintains gate drive within safe 5V ±0.35V range.

Propagation delay matching between HI and LI paths is 2ns typical, enabling dead-time control below 10ns - critical for hard-switched topologies. The device implements independent UVLO on V_CC (3.8V rising) and HB-HS (3.2V rising) rails with 200mV hysteresis, actively pulling both gates low during undervoltage conditions to prevent partial turn-on.

Key Specifications

Pinout & Package

LMG2100R044 uses a 5.5mm × 4.5mm × 0.89mm lead-free VQFN-17 (RAR) package with exposed top die for top-side cooling and large bottom GND pad for thermal conduction. Pin numbering follows TI's transparent top-view layout with pins 1–4, 8, 9, and 16 as NC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge power stage applications.

Compared with LMG3422R030 and NV6136, the LMG2100R044 uniquely balances 90V/35A capability, integrated HB UVLO, 2ns delay matching, and 5.5mm × 4.5mm footprint - making it the optimal choice for space-constrained, high-efficiency 48V intermediate bus converters where reliability and layout simplicity are prioritized.

Availability

LMG2100R044 is available at Aetrix Electronics and suitable for telecom rectifiers, solar microinverters, server VRMs, and Class-D audio amplifiers requiring stable component supply, long-term lifecycle assurance, and traceable GaN sourcing.

Supply support for LMG2100R044 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-reliability power conversion solutions.

The LMG2100R044 belongs to TI's GaN power stage product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in datacenter, telecom, and renewable energy systems where size, thermal performance, and switching fidelity are critical.

FAQ

What is the maximum continuous current rating for the LMG2100R044?

The LMG2100R044 is rated for 35A continuous output current from the SW pin at T_J = 25°C, with thermal derating applied per the R_θJA = 29°C/W and R_θJC(top) = 0.7°C/W specifications. At 125°C junction temperature, the practical continuous current drops to approximately 22A under typical PCB cooling conditions - confirmed by SOA curves in the datasheet Figure 5-8.

Does the LMG2100R044 require external bootstrap diodes or Zener clamps?

No, the LMG2100R044 does not require external bootstrap diodes or Zener clamps. It integrates a low-loss bootstrap diode (V_F = 0.7V typ at 100mA) and an internal clamp that regulates HB-HS to 4.65–5.2V - fully protecting the 6V-rated GaN FET gates without additional components.

Can the LMG2100R044 be used with 3.3V PWM controllers?

Yes, the LMG2100R044 supports 3.3V logic inputs directly: its HI and LI pins have TTL-compatible thresholds (V_IL ≤ 1.76V, V_IH ≥ 1.87V) and operate independently of V_CC voltage - enabling seamless interface with 3.3V microcontrollers, FPGAs, or digital PWM controllers without level-shifting circuitry.

How is shoot-through prevented in the LMG2100R044?

The LMG2100R044 does not implement internal shoot-through protection. Its HI and LI inputs are fully independent - if both are asserted high simultaneously, both GaN FETs turn on, causing destructive shoot-through. Prevention relies entirely on external controller-level dead-time insertion (≥10ns recommended) and robust gate drive sequencing.

What is the purpose of the NC pins on the LMG2100R044 RAR package?

Pins 1–4, 8, 9, and 16 on the LMG2100R044 are designated NC (no connect) and are not bonded internally. They must be left floating - neither tied to GND nor routed - to avoid introducing parasitic capacitance or compromising thermal performance. This is explicitly stated in the Pin Configuration table (Section 4) of the datasheet.