Texas Instruments LMG2610RRGR

Overview

LMG2610 from Texas Instruments is a 650-V GaN half-bridge power stage integrating asymmetric high-side (248 mΩ) and low-side (170 mΩ) GaN FETs, dual gate drivers with programmable slew-rate control, current-sense emulation, and bootstrap diode functionality in a 9×7 mm QFN package. It targets <75-W active-clamp flyback converters for AC/DC USB wall adapters and auxiliary power supplies.

For engineers reviewing the LMG2610 datasheet, LMG2610 pinout, LMG2610 application, or LMG2610 equivalent, this device delivers verified GaN switching performance with cycle-by-cycle over-current protection, <8 µs high-side startup, and thermal fault reporting via FLT pin - critical for high-density, high-efficiency offline SMPS design.

Technical Context

The LMG2610 implements an integrated half-bridge topology with separate high-side and low-side GaN FETs optimized for active-clamp flyback operation: asymmetric R_DS(on) values (248 mΩ HS / 170 mΩ LS) reduce conduction loss under ACF duty-cycle constraints. Its internal level shifter eliminates external high-side gate-drive noise coupling, while smart-switched bootstrap FET replaces passive diode to eliminate reverse-recovery charge and forward-voltage drop.

Current-sense emulation provides 1 mA/A scaling with 35 ns settling time, enabling direct interface to controller ICs without discrete sense resistors. Protection architecture includes interlocked gate drive, UVLO on AUX (9.3 V ±0.3 V) and BST (7.0 V ±0.3 V), and over-temperature shutdown with 150 °C trip and 20 °C hysteresis.

Key Specifications

Pinout & Package

LMG2610 uses a 40-pin VQFN (RRG) package with dual exposed thermal pads: PADH internally connected to SW node (high-side switch node), and PADL internally connected to SL (low-side source/analog ground). The package measures 9.0 mm × 7.0 mm with 0.4 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge applications.

Compared with LMG3422R030 and MPF3065G, the LMG2610 uniquely integrates ACF-optimized asymmetry, current-sense emulation, and smart bootstrap in one package - reducing component count by ≥5 and eliminating layout-sensitive discrete elements required by alternatives.

Availability

LMG2610 is available at Aetrix Electronics and suitable for AC/DC USB wall adapters, active-clamp flyback converters, and auxiliary power supplies requiring stable component supply, long-term lifecycle support, and production-ready GaN integration.

Supply support for LMG2610 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with over 50 years of innovation in power conversion ICs.

The LMG2610 belongs to TI's GaN power stage product line, engineered specifically for high-frequency, high-efficiency active-clamp flyback converters in compact, thermally constrained AC/DC applications.

FAQ

What is the maximum recommended operating voltage for the LMG2610 high-side and low-side FETs?

The LMG2610 specifies 650 V maximum drain-source voltage (V_DS) for both high-side and low-side GaN FETs under normal operation. Absolute maximum ratings allow 720 V surge and 800 V transient peak conditions - sufficient for universal AC input (85–265 V_AC) with IEC 61000-4-5 compliance margin. Operation beyond 650 V continuous requires careful layout and snubber design per TI's LMG2610 layout guidelines.

How does the LMG2610 implement current-sense emulation, and what is its accuracy?

The LMG2610 provides current-sense emulation via the CS pin, delivering a 1 mA/A scaled replica of low-side FET current with ±50 µA offset and 35 ns settling time. This replaces a physical shunt resistor, eliminating its power loss and thermal impact. Accuracy is maintained across –40 °C to 125 °C junction temperature and supports direct interfacing with standard controller IC sense inputs using a 100 Ω resistor to generate 100 mV/A.

Can the LMG2610 be used in topologies other than active-clamp flyback?

The LMG2610 is specifically optimized for active-clamp flyback (ACF) converters, with asymmetric R_DS(on) (248 mΩ HS / 170 mΩ LS), interlocked gate drive, and smart bootstrap tailored for ACF timing and ZVS behavior. While it can operate in hard-switched half-bridge configurations, its protection features, slew-rate control, and current-sense architecture deliver highest value in ACF - TI does not characterize or recommend it for LLC or PFC topologies.

What thermal management considerations apply to the LMG2610's dual thermal pads?

The LMG2610 features two exposed thermal pads: PADH (tied to SW node) and PADL (tied to SL/AGND). PADL must be connected to a low-impedance PCB ground plane for both thermal conduction and analog reference stability. PADH should connect to the high-current SW net with minimum trace inductance. TI recommends ≥4 thermal vias per pad (0.3 mm diameter, 0.6 mm pitch) to inner ground/power planes to achieve R_θJA = 25.3 °C/W and maintain T_J < 125 °C at full load.

Does the LMG2610 support independent enable/disable of high-side and low-side FETs?

No - the LMG2610 does not support independent HS/LS control. Gate drive is synchronized via shared EN pin and interlocked logic that prevents shoot-through. INH and INL inputs are level-shifted and gated internally; simultaneous high states are blocked, and transitions are coordinated to enforce dead-time. This architecture ensures robust operation in ACF but precludes use cases requiring asynchronous or phase-shifted switching of the two FETs.