Texas Instruments LMG2610RRGT
- Part No.:
- LMG2610RRGT
- Manufacturer:
- Texas Instruments
- Category:
- Full Half-Bridge (H Bridge) Drivers
- Package:
- -
- Datasheet:
-
LMG2610RRGT.pdf
- Description:
- 650-V 170/248-M GAN HALF-BRIDGE
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Product details
Overview
LMG2610 from Texas Instruments is a 650-V GaN half-bridge power stage integrating asymmetric high-side (248 mΩ) and low-side (170 mΩ) GaN FETs, dual gate drivers with programmable slew-rate control, current-sense emulation, and bootstrap diode functionality - all in a 9×7 mm QFN package. It targets <75-W active-clamp flyback (ACF) converters for high-density AC/DC adapters and USB wall chargers.
For engineers reviewing the LMG2610 datasheet, LMG2610 pinout, LMG2610 application, or LMG2610 equivalent, this page delivers verified technical context, confirmed pin functions, real-world ACF converter design implications, and validated alternative options - all grounded in TI's production-grade SNOSDE2A documentation.
Technical Context
The LMG2610 implements a monolithic GaN half-bridge with integrated level-shifting high-side driver and smart-switched bootstrap FET - eliminating external diode reverse-recovery charge and enabling fast high-side startup (<8 µs). Its asymmetric RDS(on) values (248 mΩ HS / 170 mΩ LS) are optimized specifically for ACF topology voltage stress and conduction loss distribution.
Current-sense emulation provides 1 mA/A scaling with 35 ns settling time and replaces discrete sense resistors, allowing SL thermal pad connection to PCB power ground. Protection includes cycle-by-cycle overcurrent (5.4–6.4 A LS / 3–4 A HS), overtemperature shutdown (150 °C trip), and interlocked gate-drive logic preventing shoot-through.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Max Voltage Rating | 650 V drain-source for both high-side and low-side GaN FETs - supports full ACF bus voltage swing up to 400 V with margin. |
| RDS(on) (HS/LS) | 248 mΩ (HS, 25 °C) / 170 mΩ (LS, 25 °C) - asymmetric values reduce total conduction loss in ACF's duty-cycle-biased operation. |
| Current Sense Accuracy | 1 mA/A gain with ±50 µA offset - enables precise peak-current-mode control without power-dissipating shunt resistor. |
| Turn-On Slew Rate | Programmable from 20 V/ns (slowest) to 165 V/ns (fastest) - directly controls EMI and switching ringing in compact layouts. |
| Quiescent Currents | AUX standby: 50 µA; AUX idle: 240 µA; BST idle: 60 µA - sustains high light-load efficiency in burst-mode ACF operation. |
| Thermal Resistance | RθJA = 25.3 °C/W (RRG package); RθJC(bot) = 1.22 °C/W - dual thermal pads (PADH/PADL) enable direct PCB copper thermal coupling. |
| Startup Time | High-side start-up <8 µs; BST deep-discharge recovery in 5 µs - ensures reliable operation during line-dip recovery and soft-start sequences. |
Pinout & Package
Package: 40-pin VQFN (RRG), 9.00 mm × 7.00 mm body with dual exposed thermal pads (PADH = SW node, PADL = SL/AGND node).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DH (Pins 2–12) | High-side GaN drain | Connects to input bus rail; internally tied to NC1 anchors - requires low-inductance layout to minimize voltage overshoot. |
| SW (Pins 14–16, PADH) | Half-bridge switch node | Common connection point between HS source and LS drain; PADH serves as primary current path and thermal interface. |
| SL (Pins 18–20, 22–27, PADL) | Low-side GaN source | Internally connected to AGND and PADL - PADL must be soldered to large copper pour for conduction + thermal management. |
| INH / INL | Level-shifted HS / referenced-to-AGND LS gate inputs | Logic-level inputs (0.6–2.5 V thresholds); ESD diodes to AUX require VIN ≤ VAUX to prevent latch-up. |
| CS | Current-sense emulation output | 1 mA/A proportional current source - connect external resistor to generate controller-compatible voltage signal referenced to controller GND. |
| FLT | Active-low fault flag | Open-drain output asserting on overtemperature or overcurrent - requires external pull-up to VAUX for system fault signaling. |
| RDRVL / RDRVH | Slew-rate programming terminals | Resistor-to-AGND (RDRVL) or resistor-to-SW (RDRVH) sets turn-on dV/dt - four discrete settings per side via standard E24 values. |
| AUX / BST | Low-side / high-side supply rails | AUX: 10–26 V local supply; BST: bootstrap rail referenced to SW - internal smart-switched FET replaces external diode with zero Qrr. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap FET | Eliminates forward-voltage drop and reverse-recovery charge of external diode - improves high-side supply stability and reduces switching loss. |
| Current-sense emulation | Replaces 1–2 mΩ shunt resistor, reducing board area and power dissipation while enabling SL thermal pad connection to power ground. |
| Programmable slew-rate control | Four-step dV/dt adjustment per side via external resistors - balances EMI compliance and switching efficiency without layout changes. |
| Interlocked gate-drive logic | Hardware-enforced dead-time prevents simultaneous HS/LS conduction - removes need for external timing circuitry or controller-based blanking. |
| Fast high-side startup | <8 µs bootstrap initialization - supports tight burst-mode timing and rapid line-dip recovery in ultra-efficient ACF designs. |
Applications
| AC/DC USB Wall Chargers | Active-Clamp Flyback Converters |
|---|---|
Use Scenario: Compact 30–65 W USB PD wall adapters requiring >94% efficiency at 230 VAC input and high power density. IC Role / Device Role / Timing Role: Integrated GaN half-bridge power stage executing primary-side switching in ACF topology with synchronous rectification support. Use Value: Reduces component count by 4–6 parts (external bootstrap diode, gate resistors, current sense resistor, level shifter) and shrinks PCB area by ≥25% vs discrete solutions. | Use Scenario: Sub-75 W isolated DC/DC converters for industrial IoT sensors and medical auxiliary supplies needing low no-load power and high reliability. IC Role / Device Role / Timing Role: Core switching element in ACF architecture, delivering zero-voltage switching (ZVS) across wide load range via controlled clamp energy recycling. Use Value: Enables ZVS down to 5% load using programmable slew rates and low quiescent currents - extends burst-mode efficiency envelope beyond 10 mW. |
| AC/DC Adapters | AC/DC Auxiliary Power Supplies |
Use Scenario: Universal-input (90–264 VAC) laptop adapters targeting CoC Tier 2 and DoE Level VI efficiency standards. IC Role / Device Role / Timing Role: Primary-side GaN half-bridge with integrated current sensing and protection - interfaces directly with UCC28780 or similar ACF controllers. Use Value: Achieves <30 mW no-load consumption via 50 µA AUX standby current and eliminates external current-sense resistor thermal drift errors. | Use Scenario: Multi-output auxiliary supplies for PLCs and motor drives where size, EMI, and thermal performance constrain discrete MOSFET solutions. IC Role / Device Role / Timing Role: High-efficiency, low-noise power stage operating at 300–500 kHz with controlled dV/dt to meet CISPR-32 Class B conducted EMI limits. Use Value: Programmable slew rate (20–165 V/ns) allows EMI tuning without changing magnetics or snubbers - accelerates EMC validation by 2–3 weeks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN half-bridge power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TI LMG3425R030 | 650-V, 30-mΩ single GaN FET with integrated driver; requires external high-side bootstrap and level shift. | Used in totem-pole PFC or LLC half-bridge - not ACF-optimized; lacks current-sense emulation and interlock. | Select when designing custom topologies requiring independent HS/LS control or higher current capability (>15 A). |
| Navitas NV6136 | 650-V GaN half-bridge with 150-mΩ symmetric RDS(on); integrated driver and current sense but no programmable slew rate or smart bootstrap. | Targeted at QR flyback and resonant converters - lacks ACF-specific optimizations like asymmetric FETs and fast HS startup. | Prefer for cost-sensitive QR flyback designs where ACF efficiency gains are unnecessary and layout simplicity is prioritized. |
Compared with LMG2610, LMG3425R030 offers higher current handling but demands more external components and lacks ACF-specific features; NV6136 provides lower RDS(on) symmetry but omits slew-rate tuning and smart bootstrap - making LMG2610 uniquely suited for production-ready, high-efficiency ACF implementations.
Availability
LMG2610 is available at Aetrix Electronics and suitable for AC/DC USB wall outlet power supplies, active-clamp flyback converters, and AC/DC auxiliary power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across manufacturing lots.
Supply support for LMG2610 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in GaN technology development and high-reliability power system integration.
The LMG2610 belongs to TI's GaN power stage product line, engineered specifically for high-frequency, high-efficiency active-clamp flyback converters - emphasizing integration, thermal performance, and ease of use in space-constrained adapter and charger designs.
FAQ
What is the maximum bus voltage the LMG2610 can safely switch in an active-clamp flyback design?
The LMG2610 is rated for 650 V drain-source voltage under normal operation, with surge ratings up to 720 V and transient peak tolerance of 800 V. In active-clamp flyback applications, it reliably handles reflected output voltages plus clamp voltage spikes - supporting typical 400 V DC bus designs with sufficient margin for line surges and ringing. Always observe layout best practices to avoid exceeding VDS limits during switching transitions.
How does the LMG2610's current-sense emulation differ from using a physical shunt resistor?
The LMG2610's current-sense emulation outputs a 1 mA/A proportional current (with ±50 µA offset) that replaces the traditional low-side shunt resistor. This eliminates I²R losses, thermal drift, and PCB area consumed by the resistor - while enabling the SL thermal pad to connect directly to power ground instead of signal ground. The 35 ns settling time ensures accurate current sampling for fast-control-loop ACF controllers.
Can the LMG2610 be used in topologies other than active-clamp flyback?
The LMG2610 is specifically optimized for active-clamp flyback (ACF) converters, with asymmetric RDS(on) values, fast high-side startup (<8 µs), and integrated clamp-energy-handling features. While it functions as a generic half-bridge, its protection thresholds, timing characteristics, and thermal design are tuned for ACF - using it in LLC or totem-pole PFC may require additional external circuitry and yield suboptimal efficiency or reliability.
What is the purpose of the RDRVL and RDRVH pins on the LMG2610?
RDRVL and RDRVH are external resistor terminals that set the low-side and high-side GaN FET turn-on slew rates, respectively. Connecting defined resistance values (e.g., 0–120 kΩ) between RDRVL–AGND and RDRVH–SW selects one of four discrete dV/dt settings (20–140 V/ns LS, 20–165 V/ns HS). This enables precise EMI tuning and ringing suppression without altering gate drive strength or layout.
Does the LMG2610 require external bootstrap diodes or level shifters?
No - the LMG2610 integrates a smart-switched GaN bootstrap FET (replacing conventional diodes) and a high-side gate-drive level shifter. This eliminates external diodes, avoids reverse-recovery losses, prevents overcharging of the BST capacitor, and removes noise susceptibility associated with discrete level-shifting circuits - simplifying bill-of-materials and improving system robustness.
LMG2610RRGT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- *
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Output Configuration:
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- Applications:
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- Interface:
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- Load Type:
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- Technology:
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- Rds On (Typ):
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- Current - Peak Output:
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- Voltage - Supply:
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- Voltage - Load:
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- Operating Temperature:
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LMG2610RRGT FAQ
1.How can I place an order for LMG2610RRGT through Aetrix?
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7.What is the process for return or replacement of LMG2610RRGT?
All LMG2610RRGT units undergo pre-shipment inspection (PSI). If there is an issue with LMG2610RRGT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The LMG2610RRGT part is unused and in its original packaging.
Return procedure for LMG2610RRGT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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