Texas Instruments LMG5200MOFR

Overview

LMG5200MOFR from Texas Instruments is an 80-V, 10-A integrated GaN half-bridge power stage combining two enhancement-mode GaN FETs (15 mΩ R_DS(on)) and a high-frequency gate driver in a single QFM package. It delivers high slew-rate switching (≥50 V/ns), ultra-low propagation delay (29.5 ns typical), and matched timing (≤2 ns mismatch) for hard-switched synchronous buck converters operating up to 10 MHz. Used with controllers like TPS53632G, it enables direct 48-V-to-POL conversion.

For engineers reviewing the LMG5200MOFR datasheet, LMG5200MOFR pinout, LMG5200MOFR application, or LMG5200MOFR equivalent, key selection criteria include its 80-V continuous voltage rating, dual-GaN topology with integrated bootstrap clamping, TTL-compatible 12-V-tolerant inputs, and minimal common-source inductance enabling clean high-dV/dt operation without external gate drive complexity.

Technical Context

The LMG5200MOFR implements a true half-bridge topology with independent HI and LI control inputs driving co-packaged high-side and low-side GaN FETs referenced to HS and PGND respectively. Its level-shift circuitry ensures precise high-side timing alignment, while internal bootstrap voltage clamping (4.65–5.2 V) prevents GaN gate overdrive without external components.

It features dual undervoltage lockout (UVLO) on VCC (3.2–4.5 V threshold) and HB-HS (2.5–3.9 V threshold), each with 200-mV hysteresis, plus TTL input thresholds (VIH = 2.06 V typ, VIL = 1.66 V typ) and 100-kΩ internal pull-down resistors - enabling direct interface with PWM controllers without buffer stages.

Key Specifications

Pinout & Package

LMG5200MOFR uses a 9-pin QFM (Quad Flat No-lead) package measuring 6.00 mm × 8.00 mm × 2.00 mm, bond-wire free, optimized for low-inductance PCB layout and thermal performance (R_θJA = 35 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge power stage applications.

Compared with GS61004B and TPH3205WS, LMG5200MOFR provides the only production-ready, fully integrated 48-V-class GaN half-bridge with internal clamp, matched timing, and QFM packaging - delivering fastest time-to-market for high-density POL and audio amplifier designs without compromising reliability or layout integrity.

Availability

LMG5200MOFR is available at Aetrix Electronics and suitable for 48-V point-of-load converters, multi-MHz synchronous buck regulators, and Class D audio amplifier output stages requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for LMG5200MOFR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion ICs.

The LMG5200MOFR belongs to TI's Gallium Nitride (GaN) Power Stage product line, engineered specifically to simplify adoption of GaN in high-frequency, high-efficiency power supplies - targeting data center, telecom, and industrial applications demanding >1-MHz operation and >95% efficiency.

FAQ

What is the maximum recommended switching frequency for the LMG5200MOFR?

The LMG5200MOFR gate driver is capable of operation up to 10 MHz, as confirmed in its official features list. However, practical maximum frequency depends on layout, gate drive strength, and thermal management. At 1 MHz, typical VCC operating current is 5.0 mA, and thermal resistance (R_θJA = 35 °C/W) supports sustained 10-A operation with adequate airflow. For reliable long-term use, TI recommends staying within 1–3 MHz for most 48-V POL applications.

Does the LMG5200MOFR require external bootstrap diodes or clamping components?

No, the LMG5200MOFR does not require external bootstrap diodes or clamping components. It integrates a bootstrap diode with 0.45–0.65 V forward voltage (at 100 µA) and internal clamping that regulates HB-HS voltage to 4.65–5.2 V. This eliminates the need for external Zener diodes or Schottky diodes typically used in discrete GaN or Si MOSFET half-bridges, simplifying bill-of-materials and improving reliability.

How does the LMG5200MOFR prevent shoot-through during dead-time transitions?

The LMG5200MOFR does not implement hardware-based overlap protection. Instead, it relies on precise timing control: its HI and LI inputs have ≤2 ns typical propagation delay matching, enabling accurate dead-time implementation in the external controller. Shoot-through is avoided by ensuring the controller asserts HI only after LI has been inactive for sufficient time - verified via oscilloscope measurement of SW node transitions. The truth table confirms both FETs turn on only when HI and LI are simultaneously high.

What is the role of the AGND and PGND pins, and can they be connected to the same ground plane?

AGND (Pin 7) is the analog ground reference for the driver's logic and level-shift circuitry; PGND (Pin 9) is the power ground serving as the low-side GaN FET source. Though electrically shorted internally, TI recommends connecting AGND to a quiet analog ground region and PGND to a high-current power ground pour, joined at a single point near the device. This separation prevents noise coupling from high di/dt switching currents into sensitive gate drive circuitry.

Can the LMG5200MOFR be used in isolated topologies such as active clamp forward or phase-shifted full-bridge?

Yes, the LMG5200MOFR is explicitly rated for both isolated and non-isolated applications per its official features list. Its TTL-compatible inputs (12-V tolerant), internal level shift, and bootstrap architecture make it suitable for secondary-side synchronous rectification in LLC resonant converters or as a half-bridge leg in phase-shifted full-bridge designs - provided the controller provides appropriate HI/LI timing and the layout maintains creepage/clearance for the isolation barrier.