Texas Instruments LMG5200MOFT

Overview

LMG5200MOFT from Texas Instruments is an 80-V, 10-A integrated GaN half-bridge power stage combining two enhancement-mode GaN FETs (15 mΩ R_DS(on)) and a high-frequency gate driver in a single QFM package. It delivers high slew-rate switching (>50 V/ns), 29.5 ns typical propagation delay with 2 ns matching, and internal bootstrap clamping at 5 V - enabling MHz-class synchronous buck converters for 48-V point-of-load systems.

For engineers reviewing the LMG5200MOFT datasheet, LMG5200MOFT pinout, LMG5200MOFT application, or LMG5200MOFT equivalent, this device serves as a compact, layout-optimized solution for high-density DC/DC conversion where low common-source inductance, TTL-compatible inputs (up to 12 V), and robust UVLO protection are critical design requirements.

Technical Context

The LMG5200MOFT integrates a level-shifted high-side driver and low-side driver in a monolithic half-bridge configuration, with independent HI/LI TTL inputs controlling each GaN FET. Its bootstrap supply is internally clamped to 5 V (typical) to prevent overdrive of the 80-V GaN devices, and both VCC and HB rails feature 200-mV hysteresis UVLO for reliable start-up and fault immunity.

It operates without external gate resistors or underfill, leveraging a bond-wire-free 6 mm × 8 mm QFM package that minimizes loop inductance and eliminates creepage/clearance constraints. The device supports hard-switched topologies up to 10 MHz, with third-quadrant conduction capability (2 V drop at 500 mA) and zero reverse recovery charge in the GaN FETs.

Key Specifications

Pinout & Package

LMG5200MOFT uses a 9-pin QFM (Quad Flat No-lead) package measuring 6.00 mm × 8.00 mm × 2.00 mm, lead-free and bond-wire-free, optimized for minimal parasitic inductance and simplified thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge power stage applications.

Compared with GS61004B and TPH3205WS, LMG5200MOFT provides a complete, layout-optimized 48-V GaN power stage with matched timing, integrated protection, and MHz-ready performance - eliminating gate drive design risk and reducing time-to-market for high-density POL and audio applications.

Availability

LMG5200MOFT is available at Aetrix Electronics and suitable for 48-V point-of-load converters, multi-MHz synchronous buck regulators, and Class D audio amplifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for LMG5200MOFT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader focused on analog, embedded processing, and power management technologies, serving industrial, automotive, and communications markets with high-reliability, production-ready silicon.

LMG5200MOFT belongs to TI's GaN Power Stage product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained applications - bridging the gap between discrete GaN performance and integrated ease-of-use.

FAQ

What is the maximum recommended switching frequency for LMG5200MOFT?

The LMG5200MOFT is characterized for operation up to 10 MHz, with typical application designs using 1–2 MHz. Its 29.5 ns propagation delay, 2 ns matching, and low R_DS(on) enable stable, high-efficiency operation at these frequencies - provided PCB layout minimizes power loop inductance and SW-node capacitance. Thermal limits and gate drive strength constrain practical upper bounds to ~3 MHz in most 4-layer board implementations.

Does LMG5200MOFT include built-in shoot-through protection?

No, LMG5200MOFT does not implement hardware-based shoot-through protection. Its HI and LI inputs are fully independent, and asserting both high simultaneously turns on both GaN FETs - creating a shoot-through condition. System-level dead-time control must be implemented externally in the PWM controller (e.g., TPS53632G or UCD7242) to ensure safe operation.

What is the purpose of the AGND and PGND pins, and how should they be connected on the PCB?

AGND (Pin 7) is the analog ground reference for the driver logic and level-shift circuitry; PGND (Pin 9) is the power ground return for the low-side GaN FET. Though electrically shorted internally, TI recommends connecting them with multiple low-inductance vias near the device to maintain separation of analog and power return paths - minimizing noise coupling into the gate driver while ensuring robust current return.

Can LMG5200MOFT operate with a 3.3-V logic controller?

Yes, LMG5200MOFT accepts TTL-compatible inputs with VIH = 2.06 V (min) and VIL = 1.66 V (max), making it fully compatible with 3.3-V logic controllers. Its inputs are also 12-V tolerant regardless of VCC level - allowing direct connection to 5-V or 12-V PWM outputs without level shifters or buffers.

What is the significance of the 2-V third-quadrant conduction drop specified for LMG5200MOFT?

The 2-V source-to-drain conduction drop (V_SD) at 500 mA enables efficient freewheeling during the low-side FET's body-diode conduction phase in hard-switched buck converters. Unlike silicon MOSFETs, GaN devices lack intrinsic body diodes - so this engineered third-quadrant behavior provides predictable, low-loss current recirculation without external Schottky diodes.