STMicroelectronics MASTERGAN1TR

Overview

MASTERGAN1TR from STMicroelectronics is a 600 V system-in-package integrating a half-bridge gate driver and two enhancement-mode GaN HEMTs in a single QFN 9 × 9 × 1 mm package. It delivers R_DS(ON) = 150 mΩ (T_J = 25°C), I_D(MAX) = 10 A per transistor, zero reverse recovery charge, and integrated bootstrap diode - enabling high-efficiency, compact resonant LLC and active-clamp flyback converters for server PSUs and telecom rectifiers.

For engineers reviewing the MASTERGAN1TR datasheet, MASTERGAN1TR pinout, MASTERGAN1TR application, or MASTERGAN1TR equivalent, key selection criteria include its dual-GaN half-bridge topology, UVLO on both high-side and low-side supplies, interlocking logic to prevent cross-conduction, thermal shutdown with open-drain SD/OD reporting, and 3.3–15 V logic-compatible inputs with hysteresis.

Technical Context

The MASTERGAN1TR implements a monolithic half-bridge driver with level-shifted high-side control, internal interlocking logic to enforce dead-time between high- and low-side switching, and independent UVLO monitoring on VCC (logic supply) and VBO (bootstrap supply). Its GaN transistors feature 650 V V_(BR)DS, 150 mΩ R_DS(ON) at 6 V V_GS, and zero Q_RR, eliminating reverse recovery losses in hard-switched and resonant topologies.

Thermal protection uses an on-die sensor triggering shutdown at T_J = 175°C with 20°C hysteresis; the SD/OD pin serves as both shutdown input and overtemperature fault indicator in open-drain mode. The integrated bootstrap diode (R_D(ON) = 140–175 Ω) enables self-supplied high-side operation without external diodes below ~500 kHz.

Key Specifications

Pinout & Package

The MASTERGAN1TR is housed in a thermally enhanced QFN 9 × 9 × 1 mm package with 31 leads and exposed pads EP1 (GND), EP2 (SENSE), and EP3 (VS) for optimized thermal and electrical performance. Pin numbering follows standard top-view layout with pins 1–11 along top edge and 21–31 along bottom edge.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN half-bridge applications.

Compared with GS66508T and TPH3205WS, MASTERGAN1TR reduces bill-of-materials by integrating driver, bootstrap diode, interlock logic, and thermal shutdown into one package - shortening development time for resonant converters while maintaining 650 V rating and 150 mΩ performance.

Availability

MASTERGAN1TR is available at Aetrix Electronics and suitable for server power supplies, USB-C PD adapters, and solar microinverters requiring stable component supply, long-term lifecycle support, and qualified GaN-based high-efficiency conversion.

Supply support for MASTERGAN1TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

MASTERGAN1TR belongs to ST's MASTERGAN family of GaN-integrated power systems, engineered specifically to simplify high-frequency, high-efficiency AC-DC and DC-DC converter design while minimizing footprint and component count.

FAQ

What is the maximum recommended operating voltage on the VS pin?

The VS pin is rated for continuous operation up to 520 V DC under recommended conditions, with an absolute maximum rating of 620 V. This allows safe use in 400 V AC-input PFC stages and 520 V DC bus systems common in telecom and server PSUs, provided layout minimizes voltage overshoot during switching transitions.

Does MASTERGAN1TR require external bootstrap components?

For operation below ~500 kHz, the integrated bootstrap diode (R_D(ON) = 140–175 Ω) eliminates the need for an external diode. However, at higher frequencies or high-duty-cycle conditions, adding an external Schottky diode in parallel improves charge replenishment and maintains stable VBO voltage above 4.0 V.

How does the SD/OD pin function during overtemperature events?

When junction temperature reaches 175°C, the internal thermal shutdown circuit pulls SD/OD low in open-drain mode, turning off both GaN transistors. The pin remains low until T_J drops below 155°C (175°C – 20°C hysteresis) and SD/OD voltage rises above 2.0 V, allowing resumption of normal operation only after safe cooldown.

Can MASTERGAN1TR drive GaN transistors with gate voltages other than 6 V?

Yes - the integrated driver supports V_GS up to 7 V (absolute max), and characterization data shows optimal R_DS(ON) at 6 V. Operating at 5–7 V provides robust margin against threshold variation while maintaining fast switching; gate drive voltage is set by PVCC and VCC levels, not by external bias.