STMicroelectronics MASTERGAN2TR

Overview

MASTERGAN2TR from STMicroelectronics is a 600 V system-in-package integrating an asymmetrical half-bridge gate driver with two enhancement-mode GaN HEMTs - low-side R_DS(on) = 150 mΩ (10 A), high-side R_DS(on) = 225 mΩ (6.5 A) - in a single QFN 9 × 9 × 1 mm package. It enables high-frequency, high-efficiency DC-DC and PFC stages with integrated bootstrap diode, interlocking, UVLO on both sides, and thermal shutdown.

For engineers reviewing the MASTERGAN2TR datasheet, MASTERGAN2TR pinout, MASTERGAN2TR application, or MASTERGAN2TR equivalent, this device supports fast-switching, compact high-voltage power conversion designs requiring precise timing match, reverse-current capability, and robust fault protection without external level shifters or discrete bootstrap diodes.

Technical Context

The MASTERGAN2TR implements a fully integrated half-bridge driver with independent logic inputs (HIN/LIN/SD/OD), internal level-shifting for high-side operation, and patented integrated bootstrap DMOS structure eliminating need for external bootstrap diode below 500 kHz. Its interlocking logic prevents cross-conduction by synchronizing dead-time enforcement between high- and low-side paths.

It features dual UVLO protection (VCC and VBO pins), accurate propagation delay matching (46 ns typ. for both GL and GH), and thermal shutdown with open-drain fault signaling via SD/OD. The GaN transistors deliver zero reverse recovery charge (Q_RR = 0 nC) and ultra-fast switching (t_on/t_off = 70 ns typ.), enabling >1 MHz operation in resonant topologies.

Key Specifications

Pinout & Package

MASTERGAN2TR is housed in a thermally enhanced QFN 9 × 9 × 1 mm package with three exposed pads (EP1, EP2, EP3) for GND, SENSE, and OUT thermal dissipation. Pin numbering follows top-view layout with 31-pin configuration; key terminals include dedicated HIN/LIN/SD/OD logic inputs, GL/GH gate outputs, VS (high-side drain), BOOT/OUTb (bootstrap supply), and dual ground domains (GND, PGND).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN half-bridge applications.

Compared with GS66508T and TP65H035WS, MASTERGAN2TR delivers lowest system-level component count and fastest time-to-market for half-bridge designs, trading off some gate drive customization for guaranteed timing match, fault coordination, and thermal co-location of driver and GaN dies.

Availability

MASTERGAN2TR is available at Aetrix Electronics and suitable for high-frequency server PSUs, USB PD 100W+ adapters, and industrial 3-phase PFC modules requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for MASTERGAN2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with over 40 years of industrial-grade reliability validation.

MASTERGAN2TR belongs to ST's MASTERGAN family of GaN system-in-package devices, designed specifically to accelerate adoption of gallium nitride in high-density, high-efficiency AC-DC and DC-DC conversion for datacenter, EV, and industrial applications.

FAQ

What is the maximum recommended switching frequency for MASTERGAN2TR?

MASTERGAN2TR supports hard-switched operation up to 1 MHz, with optimal performance validated at 500–750 kHz. Above 500 kHz, external bootstrap diode addition is recommended to maintain sufficient VBO hold-up; thermal derating must be applied per Figure 23/24, limiting continuous power to ≤45 W per side at 100°C case temperature.

Does MASTERGAN2TR require external gate resistors?

Yes - external gate resistors are mandatory for safe operation. The internal R_ON/R_OFF values (52 Ω/2 Ω LS, 77 Ω/2 Ω HS) set minimum drive strength; external series resistors (typically 2–10 Ω) are needed to control dV/dt, suppress ringing, and limit peak gate current during 1–2 nC total gate charge transitions.

How is thermal shutdown signaled and cleared?

When junction temperature reaches 175°C, MASTERGAN2TR forces SD/OD pin low (open-drain) and disables both GaN transistors. The pin remains low until junction temperature drops below 155°C (175°C − 20°C hysteresis) and SD/OD voltage rises above 2.7 V, after which normal operation resumes upon next valid HIN/LIN edge.

Can MASTERGAN2TR be used in synchronous rectification mode?

Yes - its reverse current capability and zero Q_RR enable true bidirectional conduction. In SR mode, the low-side GaN conducts forward current during main switch ON time and reverse current during freewheeling, eliminating body diode losses and enabling ZVS turn-on in resonant converters.