STMicroelectronics MASTERGAN4

Overview

MASTERGAN4 from STMicroelectronics is a 600 V system-in-package integrating a half-bridge gate driver and two enhancement-mode GaN HEMTs. It delivers R_DS(ON) = 225 mΩ, I_DS(MAX) = 6.5 A, and operates across –40°C to 125°C. Used in high-frequency resonant LLC and active-clamp flyback converters for compact, high-efficiency power supplies.

For engineers reviewing the MASTERGAN4 datasheet, MASTERGAN4 pinout, MASTERGAN4 application, or MASTERGAN4 equivalent, key selection criteria include bootstrap-supplied high-side drive, interlocking logic to prevent shoot-through, UVLO on both sides, shutdown capability via SD/OD pin, and thermal protection - all critical for reliable GaN-based SMPS design.

Technical Context

The MASTERGAN4 embeds matched high- and low-side GaN transistors with 650 V blocking voltage and integrated level-shifting driver logic. Its interlocking function enforces non-overlapping HIN/LIN transitions, while internal timing alignment ensures precise dead-time control between GH and GL outputs.

It supports 3.3 V–15 V logic inputs with hysteresis and pull-down, enabling direct interface with microcontrollers or Hall sensors. The integrated bootstrap diode eliminates external components for high-side supply, and dedicated SENSE pins enable accurate current sensing at the low-side source node.

Key Specifications

Pinout & Package

MASTERGAN4 uses a thermally optimized QFN 9 × 9 × 1 mm package with 31 leads and 0.6 mm pitch, featuring three exposed pads (EP1, EP2, EP3) for GND, SENSE, and VS connections to maximize PCB heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN half-bridge driver applications.

Compared with LMG3422R030 and EPC2218, MASTERGAN4 trades peak current and R_DS(ON) for complete subsystem integration - delivering faster time-to-market, smaller footprint, and built-in safety functions ideal for mid-power SMPS designs.

Availability

MASTERGAN4 is available at Aetrix Electronics and suitable for switch-mode power supplies, USB PD adapters, and high-voltage PFC stages requiring stable component supply, long-term lifecycle support, and qualified GaN technology.

Supply support for MASTERGAN4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

MASTERGAN4 belongs to ST's MASTERGAN family of GaN-integrated power systems, engineered specifically to simplify high-efficiency, high-frequency power conversion design while maintaining robust protection and thermal performance.

FAQ

What is the maximum recommended switching frequency for MASTERGAN4?

MASTERGAN4 is characterized for reliable operation up to 1 MHz in resonant topologies like LLC, supported by its fast GaN switching speed, low gate charge, and integrated driver timing. Thermal limits and PCB layout parasitics determine practical upper bounds; typical designs operate between 300 kHz and 700 kHz for optimal efficiency and EMI control.

How does the SD/OD pin function during fault conditions?

The SD/OD pin acts as an active-low shutdown input and open-drain fault indicator. During overtemperature or UVLO events, it pulls low to signal fault status. When pulled low externally, it disables both GH and GL outputs immediately. Internal pull-down ensures safe default state if left unconnected.

Can MASTERGAN4 be used in synchronous rectification applications?

Yes - MASTERGAN4 supports bidirectional current flow and zero reverse recovery loss, making it suitable for synchronous rectification in secondary-side LLC or forward converters. Its GH and GL outputs can drive low-side and high-side synchronous FETs when configured with appropriate external control logic and sensing.

What thermal vias configuration is recommended under EP2 and EP3?

ST recommends placing ≥9 thermal vias (0.3 mm diameter, 0.6 mm pitch) under each EPAD (EP2 for SENSE, EP3 for VS), connected to inner-layer copper planes. Vias must be filled or capped to ensure solder joint integrity. This configuration reduces θ_JA by up to 15°C/W compared to no vias, critical for sustained 6.5 A operation.