STMicroelectronics MASTERGAN4L

Overview

MASTERGAN4L from STMicroelectronics is a 600 V half-bridge enhancement-mode GaN HEMT system-in-package integrating a high-voltage gate driver and two discrete GaN transistors in monolithic QFN 9 × 9 mm. It delivers R_DS(ON) = 225 mΩ (T_J = 25 °C), I_DS(MAX) = 6.5 A DC, zero reverse recovery charge (Q_RR = 0 nC), and ultrafast wake-up time < 200 ns - enabling high-frequency LLC resonant converters and active clamp flybacks.

For engineers reviewing the MASTERGAN4L datasheet, MASTERGAN4L pinout, MASTERGAN4L application, or MASTERGAN4L equivalent, key selection criteria include integrated bootstrap diode (R_DBoot = 140–175 Ω), interlocking logic to prevent cross-conduction, UVLO on VCC (4.2–4.75 V turn-on), -40 °C to 125 °C operation, and dedicated SD/OD shutdown with open-drain overtemperature flag.

Technical Context

The MASTERGAN4L implements a self-contained half-bridge power stage with level-shifted high-side driver architecture, where BOOT supplies the floating high-side section via an internal bootstrap diode referenced to OUTb. The gate driver uses fixed internal R_ONH/R_OFFH = 75 Ω/2 Ω and R_ONL/R_OFFL = 75 Ω/2 Ω to control slew rate (100 V/ns) and minimize crossover time (t_C(on/off) = 10 ns).

Its logic interface supports 3.3–15 V inputs with hysteresis (0.7–1.2 V), pull-down resistors (90–220 kΩ), and interlocked truth table that forces both GaNs OFF when HIN and LIN are simultaneously high. Overtemperature protection triggers at T_TSD = 175 °C with 20 °C hysteresis, and shutdown is signaled via open-drain SD/OD pin (R_{ON_OD} = 8–18 Ω, I_{OL_OD} = 22–50 mA).

Key Specifications

Pinout & Package

MASTERGAN4L is housed in a thermally enhanced QFN 9 × 9 × 1 mm package with three exposed pads (EP1 = GND, EP2 = SENSE, EP3 = OUT) for optimized heat dissipation and low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge GaN power stage applications.

Compared with TPH3205WS and EPC2218, MASTERGAN4L reduces bill-of-materials by integrating driver, bootstrap diode, interlock logic, and overtemperature flag - delivering faster design cycle, smaller PCB area, and higher functional safety in resonant and high-frequency SMPS.

Availability

MASTERGAN4L is available at Aetrix Electronics and suitable for high-frequency LLC resonant converters, active clamp flybacks, and industrial PFC boost stages requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for MASTERGAN4L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

MASTERGAN4L belongs to ST's MASTERGAN family of GaN system-in-package devices, designed specifically to simplify high-efficiency, high-frequency power conversion in compact AC-DC and DC-DC applications.

FAQ

What is the maximum recommended bus voltage for MASTERGAN4L in continuous operation?

The MASTERGAN4L supports a maximum high-voltage bus of 520 V under recommended operating conditions (Table 3). Its 650 V GaN transistors provide margin for transient overvoltage, but sustained operation above 520 V risks exceeding safe SOA limits and thermal derating thresholds - especially at elevated case temperatures.

Does MASTERGAN4L require external gate resistors for EMI control?

No. MASTERGAN4L integrates fixed internal gate resistors (R_ONH/R_OFFH = R_ONL/R_OFFL = 75 Ω/2 Ω) optimized for its GaN transistors' Q_G and slew rate targets. Adding external resistors disrupts timing matching and may cause asymmetrical switching or exceed internal power dissipation limits (40 mW per driver resistance set).

How does the SD/OD pin function during overtemperature events?

During overtemperature, the SD/OD pin asserts low (V_OD ≤ 400 mV) with sink capability up to 50 mA, signaling fault while simultaneously disabling both GaN transistors. After TJ drops below T_HYS = 155 °C (175 °C – 20 °C hysteresis), the pin releases and normal operation resumes only if HIN/LIN inputs meet valid timing constraints (≥50 ns ON/OFF pulses).

Can MASTERGAN4L operate without an external bootstrap capacitor?

No. An external bootstrap capacitor (minimum 33 nF ceramic) is mandatory between BOOT and OUTb to sustain high-side driver voltage. The internal bootstrap diode charges this capacitor during low-side conduction; without it, V_BO collapses and high-side gate drive fails within one switching cycle.