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STMicroelectronics MASTERGAN5

Part No.:
MASTERGAN5
Manufacturer:
STMicroelectronics
Category:
Full Half-Bridge (H Bridge) Drivers
Package:
31-VQFN Exposed Pad
Datasheet:
AetrixMASTERGAN5.pdf
Description:
IC HALF BRIDGE DRIVER 4A 31QFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:274

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Product details

Overview

MASTERGAN5 from STMicroelectronics is a 600 V system-in-package integrating a half-bridge gate driver and two enhancement-mode GaN HEMTs in a single QFN 9 × 9 × 1 mm package. It delivers RDS(ON) = 450 mΩ, IDS(MAX) = 4 A (DC @ TCB = 25 °C), zero reverse recovery charge, and features UVLO on both high-side and low-side sections, interlocking logic, and dedicated shutdown (SD/OD) functionality - enabling high-efficiency, compact resonant LLC and active-clamp flyback converters.

For engineers reviewing the MASTERGAN5 datasheet, MASTERGAN5 pinout, MASTERGAN5 application, or MASTERGAN5 equivalent, this device supports fast-switching, high-voltage DC-DC and AC-DC power conversion with accurate timing match, bootstrap diode integration, and thermal shutdown protection - critical for evaluating GaN-based SMPS design trade-offs, layout simplification, and BOM reduction.

Technical Context

The MASTERGAN5 implements a fully integrated half-bridge topology with independent high-side and low-side GaN transistors sharing a common source node (SENSE) and drain node (VS for high-side, OUT for low-side). Its driver core includes matched propagation delays (Td_GL = Td_GH = 46 ns typ), interlocking logic to prevent cross-conduction, and dual UVLO monitoring (VCC and VBO) with hysteresis (0.3 V typ).

It employs an internal bootstrap structure with integrated DMOS diode (RDBoot = 140–175 Ω), eliminating need for external bootstrap diodes below 500 kHz. Thermal shutdown triggers at TTSD = 175 °C with 20 °C hysteresis, and logic inputs (HIN/LIN/SD/OD) support 3.3–15 V logic levels with internal pull-down resistors (90–220 kΩ) and 120 ns minimum pulse width requirement.

Key Specifications

Parameter Value and Actual Design Meaning
VDS Rating 650 V - Enables operation in 400 V bus systems with 25% voltage margin for transient spikes in PFC and DC-DC stages.
RDS(ON) 450 mΩ @ TJ = 25 °C - Defines conduction loss in low-side GaN; increases to ~1.012 Ω at 125 °C, requiring thermal-aware derating.
IDS(MAX) 4 A DC @ TCB = 25 °C - Sets maximum continuous output current capability; derates to 2.6 A at TCB = 100 °C per thermal data.
QG 0.8 nC typ - Low gate charge enables fast switching (ton/toff ≈ 70 ns) and reduces driver power consumption at high frequencies.
Eon/Eoff 4.5 µJ / 2.5 µJ - Quantifies switching energy loss per transition; combined with zero QRR, enables >98% efficiency in resonant topologies.
TJ Range −40 °C to 125 °C - Specifies operational junction temperature limit; thermal shutdown activates at 175 °C to prevent permanent damage.
Rth(J-CB) 4.7 °C/W per transistor - Indicates thermal resistance from junction to case pad; guides heatsink sizing for 25 W max dissipation (derated).

Pinout & Package

MASTERGAN5 is housed in a thermally enhanced QFN 9 × 9 × 1 mm package with 31 leads and 0.6 mm pitch, featuring three exposed pads (EP1, EP2, EP3) for GND, SENSE, and VS thermal anchoring.

Pin/Terminal Circuit Role Design Meaning
VS (Pins 15–19) High-voltage supply rail Connects to 520 V max DC bus; serves as drain node for high-side GaN and reference for bootstrap circuit.
OUT (Pins 12–14, EP3) Half-bridge output node Common source/drain connection point between GaN transistors; ties to transformer primary or output filter in LLC/flyback.
SENSE (Pins 4–11, EP2) Low-side source reference Provides PGND reference for low-side driver; internally connected to PGND, enabling accurate current sensing via shunt.
BOOT (Pin 22) High-side floating supply Drives high-side gate via bootstrap capacitor; monitored by VBO UVLO (4.4–6.5 V operating range).
HIN / LIN (Pins 26 / 24) Logic control inputs Active-high signals controlling high/low-side GaN; require ≥120 ns pulse width and include internal 150 kΩ pull-down.
SD/OD (Pin 25) Shutdown & fault reporting Active-low shutdown input; open-drain output pulls low during thermal fault, enabling system-level fault latching.
GH / GL (Pins 20 / 2) GaN gate drive outputs Direct gate connections to high/low-side GaN; feature matched RON/ROFF (~77 Ω / 2 Ω) for symmetric switching.

Key Features

Feature Design Value
Integrated bootstrap diode Reduces external component count by eliminating discrete bootstrap diode; RDBoot = 140–175 Ω enables reliable high-side supply up to 500 kHz.
Interlocking logic Hardware-enforced dead-time prevents simultaneous conduction of high/low-side GaN, eliminating shoot-through risk without external timing circuits.
Dual UVLO protection Independent under-voltage lockout on VCC (4.2–4.5 V turn-on) and VBO (3.6–4.0 V turn-on) ensures safe operation during brown-out or bootstrap failure.
Thermal shutdown with OD feedback Shuts down both GaN transistors at 175 °C and asserts SD/OD pin low, enabling controller-level fault detection and recovery sequencing.
Reverse current capability Enables bidirectional current flow in synchronous rectification or resonant topologies without body diode conduction losses.

Applications

Resonant LLC Converters Active-Clamp Flyback

Use Scenario: High-efficiency 100–300 W server/adapter power supplies operating at 200–500 kHz with ZVS.

IC Role / Device Role / Timing Role: Half-bridge power stage driver and GaN switch co-integrated unit; provides matched propagation delay and interlocking for precise phase control.

Use Value: Eliminates gate driver + discrete GaN layout complexity, reduces PCB area by >30%, and enables <100 ns dead time without external timing components.

Use Scenario: Compact 65–100 W USB PD chargers requiring high power density and low EMI.

IC Role / Device Role / Timing Role: Primary-side switching element with integrated gate drive; leverages zero QRR to suppress ringing and reduce snubber losses.

Use Value: Achieves >94% peak efficiency at full load while meeting CISPR-32 Class B EMI limits without added filtering components.

High-Voltage PFC Stages Isolated DC-DC Modules

Use Scenario: 3.3 kW telecom rectifier front-end using interleaved totem-pole PFC with 650 V bus.

IC Role / Device Role / Timing Role: Low-side switch in totem-pole configuration; SENSE pin enables direct current-sense resistor placement at source node.

Use Value: Delivers 98.5% efficiency at 230 VAC input due to 450 mΩ RDS(ON) and zero reverse recovery, reducing heatsink mass by 40% vs Si MOSFET solution.

Use Scenario: 48 V–12 V isolated intermediate bus converter in datacenter power distribution units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver with reverse conduction support for bidirectional energy transfer.

Use Value: Enables soft-recovery operation during light-load burst mode, maintaining >92% efficiency down to 5% load without audible noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN half-bridge applications.

Alternative Part Technical Difference Application Difference Selection Advice
GaNSystems GS66508T Discrete 650 V GaN FET + external driver; no integrated bootstrap or interlock; RDS(ON) = 150 mΩ but requires external level-shifter and dead-time control. Requires custom gate drive layout and timing tuning; better suited for designs needing >10 A current or parallel devices. Select when higher current rating or modular driver optimization is required; not drop-in compatible due to lack of integrated logic.
TI UCC27624 Standalone 650 V half-bridge driver only; no integrated GaN transistors; supports 4 A peak output but needs external 650 V GaN pair. Offers programmable dead time and adjustable drive strength; used where thermal separation of driver and FET is mandatory. Choose for designs requiring independent thermal management or multi-GaN configurations; adds 8+ passive components versus MASTERGAN5's 2-capacitor minimal layout.

Compared with GS66508T and UCC27624, MASTERGAN5 trades off current scalability and driver flexibility for drastic BOM reduction, layout simplicity, and guaranteed timing matching - making it optimal for space-constrained, medium-power (<300 W) GaN SMPS where time-to-market and reliability outweigh customization needs.

Availability

MASTERGAN5 is available at Aetrix Electronics and suitable for resonant LLC converters, active-clamp flyback adapters, and high-voltage PFC stages requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for MASTERGAN5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

MASTERGAN5 belongs to ST's MASTERGAN family of GaN system-in-package devices, engineered specifically to accelerate adoption of gallium nitride in high-frequency, high-efficiency power conversion - targeting compact, high-density SMPS designs where integration, reliability, and ease of use are paramount.

FAQ

What is the recommended minimum dead time between high-side and low-side switching?

The MASTERGAN5 incorporates hardware interlocking that enforces a minimum dead time of 5 ns (typical) to prevent cross-conduction. This is fixed by internal logic and does not require external configuration. For optimal reliability in hard-switched applications, designers should still ensure controller-level dead time exceeds 20 ns to accommodate propagation delays and layout skew.

Can MASTERGAN5 operate with 3.3 V logic inputs?

Yes - MASTERGAN5 logic inputs (HIN, LIN, SD/OD) support 3.3 V to 15 V logic levels with hysteresis. The high-level threshold (VIH) is 2.17 V (typ) at 25 °C, ensuring robust recognition of 3.3 V CMOS signals. Internal 150 kΩ pull-down resistors guarantee safe OFF-state default if inputs float.

Does MASTERGAN5 require an external bootstrap diode?

No - MASTERGAN5 integrates a patented high-voltage DMOS bootstrap diode (RDBoot = 140–175 Ω) connected between VCC and BOOT. An external diode is optional and only recommended for operation above 500 kHz to improve charge replenishment speed and reduce voltage droop under heavy load.

How is thermal shutdown signaled to the system controller?

During thermal shutdown, MASTERGAN5 forces the SD/OD pin low in open-drain mode, sinking up to 50 mA. This allows direct connection to a microcontroller GPIO with pull-up resistor for fault interrupt generation. Recovery occurs automatically when junction temperature falls below (175 − 20) = 155 °C and SD/OD voltage rises above 2.17 V.

MASTERGAN5 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
31-VQFN Exposed Pad
Packaging:
Tray
Product Status:
Active
Output Configuration:
Half Bridge
Applications:
DC-DC Converters
Interface:
Logic
Load Type:
Inductive, Capacitive, Resistive
Technology:
-
Rds On (Typ):
450mOhm
Current - Output / Channel:
4A
Current - Peak Output:
4A
Voltage - Supply:
3.3V ~ 15V
Voltage - Load:
3.3V ~ 15V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Features:
-
Fault Protection:
Over Temperature, UVLO
Mounting Type:
Surface Mount
Supplier Device Package:
31-QFN (9x9)

MASTERGAN5 FAQ

1.How can I place an order for MASTERGAN5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MASTERGAN5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MASTERGAN5 reliable?

The price and inventory of MASTERGAN5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MASTERGAN5 is usually 5 days.

3.What payment methods are accepted for MASTERGAN5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MASTERGAN5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MASTERGAN5?

MASTERGAN5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MASTERGAN5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MASTERGAN5?

For technical support, including MASTERGAN5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MASTERGAN5 requirements.

6.How does Aetrix verify that MASTERGAN5 is sourced from the original manufacturer or authorized distributors?

All MASTERGAN5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MASTERGAN5 meets industry standards.

7.What is the process for return or replacement of MASTERGAN5?

All MASTERGAN5 units undergo pre-shipment inspection (PSI). If there is an issue with MASTERGAN5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MASTERGAN5 part is unused and in its original packaging.

Return procedure for MASTERGAN5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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