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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Nexperia USA Inc. NGW75T65H3DFQ

Name: NGW75T65H3DFQ
Brand: Nexperia USA Inc.
SKU: NGW75T65H3DFQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: NGW75T65H3DFQ

Manufacturer:: Nexperia USA Inc.

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: NGW75T65H3DFQ.pdf

Description:: NGW75T65H3DF/SOT429-2/TO247-3L

Quantity:: RFQ Add To RFQ list

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Product details

Overview

NGW75T65H3DF from Nexperia is a 650 V, 75 A trench field-stop IGBT with integrated full-rated silicon diode in TO-247-3 package, designed for hard-switching industrial power inverters. It features third-generation carrier-stored trench-gate + field-stop architecture, 175 °C maximum junction temperature, and optimized turn-off losses for high-frequency operation in UPS, EV charging, PFC, and induction heating systems.

For engineers reviewing the NGW75T65H3DF datasheet, NGW75T65H3DF pinout, NGW75T65H3DF application, or NGW75T65H3DF equivalent, this page delivers verified electrical characteristics (V_CE(sat) = 2.15 V @ 75 A/175 °C), thermal resistance (R_th(j-c) = 0.25 K/W), switching energy (E_off = 1.4 mJ @ 175 °C), and diode reverse recovery performance (Q_rr = 7890 nC @ 175 °C) to support gate drive design, thermal management, and parallel operation validation.

Technical Context

This IGBT employs a carrier-stored trench-gate structure combined with a field-stop layer to achieve low conduction loss while maintaining robust short-circuit ruggedness and stable parameter distribution across temperature. Its monolithic integration with a fast, fully rated anti-parallel diode enables compact inverter leg designs without external diode selection overhead.

The device is qualified to HV-H3TRB standards and rated for continuous operation up to 175 °C junction temperature, with tight parameter spread enabling reliable parallel operation. Gate threshold voltage (V_GE(th) = 4.3–5.7 V) and transconductance (g_fs = 53 S) are specified at 25 °C and 175 °C to support stable control loop design across thermal extremes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE(sat)	2.15 V @ 75 A, 175 °C - Enables low conduction loss in high-temp industrial environments, reducing heatsink requirements.
V_F (diode)	1.3 V @ 75 A, 175 °C - Low forward drop minimizes diode conduction loss during freewheeling in inverter half-bridges.
E_off	1.4 mJ @ 400 V, 75 A, 175 °C - Optimized turn-off energy supports high-frequency switching (>20 kHz) with manageable snubber and EMI design.
Q_rr	7890 nC @ 175 °C - Confirmed reverse recovery charge informs gate driver peak current sizing and diode stress analysis.
R_th(j-c)	0.25 K/W (IGBT) - Enables direct thermal interface to heatsink; supports >300 W power dissipation at T_c = 100 °C.
t_r/t_f	57 ns / 49 ns @ 175 °C - Fast switching transitions reduce overlap loss and improve efficiency in hard-switched topologies.
dirr/dt	280 A/µs @ 175 °C - High diode fall rate supports fast commutation in resonant and soft-switched PFC stages.

Pinout & Package

TO-247-3 plastic single-ended through-hole package with heatsink-mounted base; mounting base (mb) electrically connected to collector terminal. Package outline conforms to SOT429-5 standard with 3 leads and M3 screw mounting hole.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input for IGBT channel; requires 15 V nominal drive with ±20 V absolute max rating; internal R_g = 0.7 Ω.
2 (C)	Collector	Main high-side power terminal; electrically tied to mounting base (mb); rated for 650 V blocking and 80 A continuous case current.
3 (E)	Emitter	Power return path and gate reference; isolated from mounting base; used for Kelvin emitter sensing in precision gate drive layouts.

Key Features

Feature	Design Value
Third-generation trench field-stop IGBT	Combines carrier storage and field-stop layers to simultaneously reduce V_CE(sat) and E_off without sacrificing short-circuit withstand time.
Monolithic full-rated silicon diode	Integrated anti-parallel diode rated for 75 A continuous and 300 A repetitive peak, eliminating discrete diode selection and layout mismatch.
HV-H3TRB qualification	Validated for high-voltage reliability under humidity, temperature cycling, and bias stress-critical for industrial inverter field life.
Stable parameter distribution	Tight V_GE(th) (±0.7 V) and g_fs tolerance enable predictable parallel operation without current-sharing resistors.
175 °C maximum junction temperature	Enables operation in high-ambient environments (e.g., enclosed UPS cabinets) and extends thermal design margin for overload conditions.

Applications

Uninterruptible Power Supply (UPS) Inverter

EV Charging Converter

Use Scenario: Three-phase IGBT-based inverter stage converting DC bus to clean 50/60 Hz AC output with <1% THD.

IC Role / Device Role / Timing Role: Main switching device in two-level or three-level inverter leg; handles 75 A RMS output current at 16–20 kHz PWM frequency.

Use Value: Low E_off and stable V_CE(sat) over temperature ensure consistent efficiency across load and ambient range; integrated diode simplifies layout and reduces component count.

Use Scenario: DC-DC isolation stage in 11–22 kW on-board chargers using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switch operating at 100–200 kHz with zero-voltage switching assist; conducts 75 A peak during duty cycle.

Use Value: Fast t_r/t_f and low C_res (19 pF) minimize switching loss during high-frequency ZVS transitions; 175 °C rating accommodates compact heatsinking in vehicle space constraints.

Power Factor Correction (PFC)

Induction Heating

Use Scenario: Boost-type active PFC front-end in industrial motor drives, delivering >99% PF at full load.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 30–100 kHz with 75 A peak inductor current.

Use Value: Low Q_G (160 nC) and optimized E_on/E_off balance reduce gate drive power and thermal stress; diode Q_rr and dirr/dt support fast recovery during boost diode commutation.

Use Scenario: Half-bridge resonant inverter driving 20–100 kHz tank circuits in industrial metal heating systems.

IC Role / Device Role / Timing Role: Hard-switched resonant leg switch handling 75 A peak current and 650 V DC link; subjected to high dv/dt and repetitive overcurrent events.

Use Value: Robust RBSOA (up to 650 V/75 A at 175 °C) ensures safe operation under transient overloads; low C_ies (4200 pF) improves gate drive stability in high-noise EMI environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP75H65DFB	650 V/75 A, but higher V_CE(sat) (2.3 V @ 175 °C) and slower t_f (70 ns); no integrated diode - requires external ultrafast diode.	Suitable for lower-frequency (<15 kHz) PFC where diode recovery is less critical; not recommended for high-temp UPS due to higher conduction loss.	Select when cost sensitivity outweighs thermal performance; verify external diode Q_rr compatibility with gate driver.
IXYS IXGN75N60B3	600 V rating (vs. 650 V), higher E_off (2.1 mJ), and wider V_GE(th) spread (4.0–6.5 V); TO-247-3 package with separate diode terminal.	Better suited for 400 V DC bus systems (e.g., solar inverters); limited headroom for 650 V industrial bus applications requiring margin.	Choose only if system DC link is ≤550 V; avoid in 650 V UPS/EV charger designs where voltage derating is required.

Compared with STGP75H65DFB and IXGN75N60B3, NGW75T65H3DF delivers superior thermal efficiency (lower V_CE(sat), lower R_th(j-c)) and integrated diode simplicity, making it optimal for high-reliability, high-power-density 650 V industrial inverters where thermal headroom and layout compactness are critical.

Availability

NGW75T65H3DF is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS) inverters, EV charging converters, and industrial induction heating systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for NGW75T65H3DF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, with leadership in automotive-qualified and industrial-grade power devices.

The NGW75T65H3DF belongs to Nexperia's high-voltage IGBT portfolio engineered specifically for industrial power conversion-emphasizing ruggedness, thermal stability, and ease of parallel operation in demanding inverter applications.

FAQ

What is the maximum allowable gate-emitter voltage for NGW75T65H3DF?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller coupling. The internal gate resistor (0.7 Ω) helps dampen ringing but does not replace proper gate driver design with clamping and slew-rate control.

Can NGW75T65H3DF be operated in parallel configurations?

Yes-its tight V_GE(th) distribution (±0.7 V) and stable g_fs enable reliable parallel operation without external emitter resistors. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and shared heatsink mounting to maintain uniform junction temperature across devices. Thermal resistance matching (R_th(j-c) = 0.21–0.25 K/W) further ensures balanced current sharing.

How does the integrated diode differ from standard FRD counterparts?

The monolithic diode is a full-rated, fast-recovery silicon device co-packaged with the IGBT die, rated for 75 A continuous and 300 A peak. Unlike discrete FRDs, it guarantees matched thermal coupling and identical temperature coefficient behavior-critical for minimizing dynamic current imbalance during commutation. Its Q_rr (7890 nC @ 175 °C) and dirr/dt (280 A/µs) are characterized jointly with the IGBT under identical test conditions.

Is NGW75T65H3DF suitable for automotive applications?

No-this device is not automotive-qualified. It lacks AEC-Q101 certification and has not undergone automotive-specific stress testing (e.g., extended temperature cycling, board-level vibration, or HTRB). Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in EV traction inverters or onboard chargers requires formal automotive-grade alternatives with documented PPAP and qualification reports.

NGW75T65H3DFQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 600 W

Switching Energy:: 2.9mJ (on), 1.1mJ (off)

Input Type:: Standard

Gate Charge:: 160 nC

Td (on/off) @ 25°C:: 29ns/170ns

Test Condition:: 400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr):: 165 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3L

NGW75T65H3DFQ FAQ

1.How can I place an order for NGW75T65H3DFQ through Aetrix?

Please submit a Request for Quotation (RFQ) for NGW75T65H3DFQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NGW75T65H3DFQ reliable?

The price and inventory of NGW75T65H3DFQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NGW75T65H3DFQ is usually 5 days.

3.What payment methods are accepted for NGW75T65H3DFQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NGW75T65H3DFQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NGW75T65H3DFQ?

NGW75T65H3DFQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NGW75T65H3DFQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NGW75T65H3DFQ?

For technical support, including NGW75T65H3DFQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NGW75T65H3DFQ requirements.

6.How does Aetrix verify that NGW75T65H3DFQ is sourced from the original manufacturer or authorized distributors?

All NGW75T65H3DFQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NGW75T65H3DFQ meets industry standards.

7.What is the process for return or replacement of NGW75T65H3DFQ?

All NGW75T65H3DFQ units undergo pre-shipment inspection (PSI). If there is an issue with NGW75T65H3DFQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NGW75T65H3DFQ part is unused and in its original packaging.

Return procedure for NGW75T65H3DFQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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