STMicroelectronics PWD13F60

Overview

PWD13F60 from STMicroelectronics is a high-density power driver integrating four N-channel 600 V, 320 mΩ MOSFETs and dual gate drivers in a single VFQFPN package. It operates as a full bridge or two independent half bridges, supports 6.5–15 V logic inputs with hysteresis, features interlocking to prevent cross-conduction, and includes integrated bootstrap diodes for high-side drive-enabling compact motor control in industrial pumps and HID ballasts.

For engineers reviewing the PWD13F60 datasheet, PWD13F60 pinout, PWD13F60 application, or PWD13F60 equivalent, this page delivers verified electrical specs (R_DS(on) = 320 mΩ, BVDSS = 600 V, VCC UVLO thresholds 5.3–6.5 V), thermal data (R_th(J-CB) = 1.1 °C/W), functional truth table, and real-world layout guidance for full-bridge DC-AC conversion.

Technical Context

The PWD13F60 implements dual independent half-bridge topology with fully integrated gate drivers and power MOSFETs. Each half bridge has dedicated VCCx, BOOTx, SENSEx, and GNDx pins, enabling isolated supply and sensing per channel. The interlocking logic prevents simultaneous HINx/LINx = 1 states within the same bridge, eliminating shoot-through risk without external timing circuitry.

Its bootstrap architecture replaces external fast-recovery diodes with an internal DMOS-diode structure driven synchronously by the low-side gate driver. This ensures efficient high-side gate charging during LS conduction while allowing optional external diode parallel connection for applications requiring continuous bootstrap recharge.

Key Specifications

Pinout & Package

The PWD13F60 is housed in a thermally enhanced VFQFPN 10 × 13 × 1.0 mm package with seven exposed thermal pads (EPAD1–EPAD7) for direct PCB copper attachment and heat sinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage full-bridge driver applications.

Compared with IRSM836-048 and STK5C4U36JR, the PWD13F60 uniquely balances 600 V robustness, 320 mΩ conduction efficiency, and VFQFPN miniaturization-making it optimal for space-constrained, high-input-voltage motor drives where discrete bootstrap elimination improves reliability.

Availability

PWD13F60 is available at Aetrix Electronics and suitable for industrial motor control, HID ballast design, and DC-AC inverter development requiring stable component supply across extended production lifecycles.

Supply support for PWD13F60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

The PWD13F60 belongs to ST's Power Driver System-in-Package (SiP) product line, engineered specifically for high-voltage motor control and lighting applications demanding integration, thermal efficiency, and layout simplicity in compact form factors.

FAQ

What is the maximum continuous output current per half-bridge at 100 °C case temperature?

The PWD13F60 supports 6.9 A DC per MOSFET at T_CB = 100 °C, as specified in Table 2 (Absolute Maximum Ratings). This assumes uniform power distribution across all four MOSFETs and adequate PCB copper area with thermal vias under EPADs to maintain case temperature at or below 100 °C.

Can the PWD13F60 operate with a single 12 V supply for both VCC1 and VCC2?

Yes - VCC1 and VCC2 may be tied together to a common 12 V rail, as confirmed in Section 6.3. Doing so simplifies power delivery but eliminates independent fault isolation; if one half-bridge experiences UVLO, both will shut down. For redundancy-critical systems, separate supplies are recommended.

How does the integrated bootstrap diode affect PCB layout compared to discrete implementations?

The integrated bootstrap diode removes the need for an external 600 V, 1 A fast-recovery diode and its associated footprint, routing, and thermal pad. Layout benefits include reduced trace inductance on BOOT paths, elimination of one solder joint failure point, and simplified decoupling near the BOOT pin-verified in ST's PWD13F60 evaluation board design.

Is there a recommended minimum dead time to prevent shoot-through in full-bridge operation?

Section 5 specifies a suggested minimum dead time of 270 ns. This value accounts for propagation delays in the internal driver and MOSFET switching characteristics (t_C(on) = 75 ns, t_C(off) = 105 ns). Implementing ≥270 ns dead time in the MCU PWM generator ensures safe commutation even under worst-case process/voltage/temperature conditions.