STMicroelectronics PWD5F60TR

Overview

PWD5F60TR from STMicroelectronics is a high-voltage power system-in-package integrating two dual half-bridge gate drivers and four 600 V, 1.38 Ω N-channel MOSFETs in a single VFQFPN 15 × 7 × 1 mm package. It supports full-bridge and dual independent half-bridge topologies, features UVLO on both high-side and low-side sections, adjustable dead-time (0.1–3.4 µs), and embeds two uncommitted comparators for overcurrent/overtemperature protection. Used in industrial motor drives and cooking hood fan control.

For engineers reviewing the PWD5F60TR datasheet, PWD5F60TR pinout, PWD5F60TR application, or PWD5F60TR equivalent, this page delivers verified functional identity, validated pin roles, confirmed thermal and switching parameters, comparator interface behavior, and real-world layout implications of its integrated bootstrap diode and EPAD thermal structure.

Technical Context

The device implements two independent gate driver channels, each with dedicated VCCx, BOOTx, and GNDx supplies, enabling isolated operation and fault containment. Each channel integrates a patented active bootstrap structure-replacing external diodes-with synchronous DMOS-based charging that activates only when the low-side driver is ON.

Dead time is resistor-programmable per channel (DT1/DT2 pins) with matching tolerance ≤400 ns across settings; comparators CP±1/CP±2 accept rail-to-rail inputs and drive open-drain outputs (CPOUT1/CPOUT2) capable of sinking 2.4 mA at 400 mV, supporting fast-response protection loops without external amplification.

Key Specifications

Pinout & Package

Package: VFQFPN 15 × 7 × 1 mm with 46-pin layout and 7 exposed thermal pads (EPAD1–EPAD7) for enhanced heat dissipation and mechanical stability. Pin 1 marked by notch; no lead pitch - fine-pitch (0.65 mm) surface-mount design requiring controlled reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual half-bridge driver applications.

Compared with STSPIN32F0A, PWD5F60TR delivers higher voltage rating and passive protection without MCU overhead; versus IRSM8364MPBF, it offers lower RDS(on), integrated comparators, and tighter dead-time matching-enabling more robust, compact, and thermally efficient industrial motor control.

Availability

PWD5F60TR is available at Aetrix Electronics and suitable for industrial motor drives, cooking hood fan modules, and gas heater blower systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for PWD5F60TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

PWD5F60TR belongs to ST's STPOWER family of intelligent power modules, engineered specifically for high-voltage motor control and power conversion where integration, thermal efficiency, and protection robustness are critical.

FAQ

What is the maximum continuous drain current per MOSFET in PWD5F60TR?

The maximum continuous drain current per MOSFET is 2 A at T_CB = 100 °C, derated from 3.5 A at T_CB = 25 °C. This rating assumes proper PCB thermal design with the seven EPADs connected to ≥200 mm² of 2-oz copper and ≥4 thermal vias per pad, as validated in JESD51-5/7 testing.

Can PWD5F60TR operate with 3.3 V logic inputs without level shifting?

Yes-PWD5F60TR accepts 3.3 V logic inputs directly: V_IL is guaranteed ≤1.1 V and V_IH ≥1.9 V, with 3.3 V falling well within the 0.8–2.3 V valid logic window. Its 3.3–15 V input range and internal 370 kΩ pull-down resistors ensure noise-immune, fail-safe operation with modern MCUs and Hall sensors.

How does the integrated bootstrap diode differ from a discrete external diode?

The integrated bootstrap uses a patented active DMOS structure driven synchronously by the low-side gate driver-turning ON only during low-side conduction. Unlike passive diodes, it eliminates reverse recovery charge (Q_rr) and associated switching loss, improves boot capacitor recharge efficiency, and removes a common point of failure in high-reliability applications.

Is external current sensing required when using the embedded comparators?

No-PWD5F60TR's SENSE1/SENSE2 pins connect directly to the low-side MOSFET source nodes, enabling shunt-based current sensing without signal conditioning. The comparators accept rail-to-rail inputs and provide open-drain outputs (CPOUT1/CPOUT2) that interface directly with MCU interrupt pins or latch circuits for hardware-fast overcurrent shutdown.