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Renesas RJP30E3DPK-M2#T0
- Part No.:
- RJP30E3DPK-M2#T0
- Manufacturer:
- Renesas
- Category:
- Single IGBTs
- Package:
- -
- Datasheet:
-
RJP30E3DPK-M2#T0.pdf
- Description:
- IGBT
- Quantity:
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Inventory:29,098
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Product details
Overview
RJP30E3DPK-M2#T0 from Renesas Electronics is a silicon N-channel IGBT designed for high-speed power switching in industrial inverters and motor drives, featuring VCE(sat) = 1.6 V (typ), tf = 150 ns (typ), IC = 40 A, VCES = 360 V, and θj-c = 2.08 °C/W.
For engineers reviewing the RJP30E3DPK-M2#T0 datasheet, RJP30E3DPK-M2#T0 pinout, RJP30E3DPK-M2#T0 application, or RJP30E3DPK-M2#T0 equivalent, this device supports high-efficiency 3-phase inverter stages requiring low conduction loss, fast turn-off, and robust thermal performance at junction temperatures up to 150°C.
Technical Context
This IGBT employs Renesas' G5H-series trench gate technology to simultaneously reduce VCE(sat) and switching losses. Its optimized charge distribution yields Qg = 52 nC and Qgc = 15 nC, enabling stable gate drive with 5 Ω external resistance under 40 A load conditions.
The TO-3PSG package integrates a flanged collector terminal for direct heatsink mounting and low thermal impedance. Electrical isolation between gate and emitter is rated at ±30 V, while ICES remains ≤1 μA at VCE = 360 V, supporting reliable blocking in high-voltage DC bus applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 360 V - Maximum repeatable collector-emitter blocking voltage without avalanche breakdown |
| VCE(sat) | 1.6 V (typ) at IC = 40 A, VGE = 15 V - Low conduction loss enabling <1.5 W static dissipation per device |
| tf | 150 ns (typ) - Fast fall time minimizes switching energy loss during turn-off transitions |
| Qg | 52 nC - Total gate charge determines required gate driver peak current and drive power |
| θj-c | 2.08 °C/W - Junction-to-case thermal resistance enables direct thermal coupling to heatsinks for sustained 40 A operation |
| IC | 40 A continuous - Rated collector current at Tc = 25°C, derated linearly above case temperature |
| Cies | 1700 pF - Input capacitance defines gate drive loop stability and AC coupling behavior |
Pinout & Package
Package: TO-3PSG (RENESAS code PRSS0004ZH-A), metal-flanged isolated package with 4 terminals; flange serves as collector connection and thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive voltage (±30 V max); requires 52 nC total charge for full turn-on |
| 2 (Collector) | High-side power output | Main current path from DC bus; electrically and thermally connected to flange |
| 3 (Emitter) | Power return reference | Serves as source of load current and gate drive return; referenced to control ground |
| 4 (Collector Flange) | Thermal & electrical collector node | Direct-mount interface to heatsink; must be electrically isolated from chassis unless system design permits common collector |
Key Features
| Feature | Design Value |
|---|---|
| Trench gate structure (G5H series) | Enables simultaneous optimization of VCE(sat) and switching speed without trade-off penalties |
| Low VCE(sat) = 1.6 V (typ) | Reduces conduction loss by ~30% vs. comparable 40 A IGBTs, improving inverter efficiency at medium loads |
| Fast tf = 150 ns (typ) | Supports PWM frequencies up to 20 kHz with minimal switching loss penalty in motor drive applications |
| Low ICES = 1 μA max | Ensures reliable high-voltage blocking in 360 V DC link systems with negligible leakage-induced heating |
| Flanged TO-3PSG package | Provides 2.08 °C/W thermal path and mechanical rigidity for high-reliability industrial mounting |
Applications
| Industrial Motor Inverters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase 360 V DC bus inverter driving 5–10 kW induction motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-side switching element in six-pack IGBT module configuration; handles 40 A RMS output current with 20 kHz PWM. Use Value: 1.6 V VCE(sat) reduces conduction loss by 1.2 W per device versus legacy 2.0 V parts, lowering heatsink requirements. |
Use Scenario: Online double-conversion UPS with bidirectional DC-link switching and battery charging circuitry. IC Role / Device Role / Timing Role: Inverter-stage switch converting DC bus to regulated 230 V AC output; operates with tight dead-time control. Use Value: 150 ns tf enables precise dead-time management, minimizing shoot-through risk while maintaining waveform fidelity. |
| Solar Photovoltaic Inverters | Induction Heating Systems |
Use Scenario: String-level 360 V DC input inverter feeding grid-tied AC output via transformerless topology. IC Role / Device Role / Timing Role: Main switching device in H-bridge output stage; subjected to repetitive 15–20 kHz switching with high dv/dt. Use Value: Cres = 40 pF and Coes = 85 pF limit Miller-induced false turn-on, improving noise immunity in EMI-sensitive PV environments. |
Use Scenario: Resonant half-bridge inverter supplying 20–50 kHz power to induction coils in industrial heating equipment. IC Role / Device Role / Timing Role: High-frequency switching element handling pulsed 40 A peak currents with strict timing control. Use Value: Qgc = 15 nC ensures predictable Miller plateau duration, enabling accurate zero-voltage switching (ZVS) timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN40N60B3 | VCES = 600 V, VCE(sat) = 1.8 V (typ), tf = 120 ns, TO-247 package | Higher voltage rating suits 600 V DC bus designs; slower saturation voltage increases conduction loss at 40 A | Select when system DC link exceeds 400 V or when TO-247 footprint compatibility is required |
| Infineon IKW40N60H3 | VCES = 600 V, VCE(sat) = 1.6 V (typ), tf = 130 ns, TO-247-3L package | Same VCE(sat) but higher voltage rating; lacks flanged thermal path, requiring insulated mounting hardware | Prefer for 600 V systems where thermal interface simplicity is secondary to voltage margin |
Compared with IXGN40N60B3 and IKW40N60H3, the RJP30E3DPK-M2#T0 delivers optimal thermal performance in 360 V systems due to its flanged TO-3PSG package and 2.08 °C/W θj-c, while maintaining competitive switching speed and conduction loss-making it purpose-fit for cost- and space-constrained industrial inverters.
Availability
RJP30E3DPK-M2#T0 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply and long-term production continuity.
Supply support for RJP30E3DPK-M2#T0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.
The RJP30E3DPK-M2#T0 belongs to Renesas' G5H-series IGBT family, engineered specifically for high-efficiency, high-reliability industrial inverter applications operating at 360 V DC bus voltages.
FAQ
What is the maximum allowable gate-emitter voltage for RJP30E3DPK-M2#T0?
The RJP30E3DPK-M2#T0 has a gate-emitter voltage rating of ±30 V, meaning it can withstand up to +30 V for turn-on and –30 V for active gate clamping or reverse bias. Exceeding this range risks permanent gate oxide damage. The RJP30E3DPK-M2#T0 datasheet specifies IGES ≤ ±100 nA at ±30 V, confirming stable gate insulation within these limits.
Does RJP30E3DPK-M2#T0 require a negative gate voltage for reliable turn-off?
No, the RJP30E3DPK-M2#T0 achieves reliable turn-off with 0 V gate drive; however, applying –5 V to –15 V improves noise immunity and reduces tail current. Its VGE(off) is specified from 2.5 V to 5 V, indicating effective cutoff begins well below 0 V. The RJP30E3DPK-M2#T0's low Qgc (15 nC) further supports clean turn-off even without strong negative bias.
Can RJP30E3DPK-M2#T0 be used in parallel configurations?
Yes, the RJP30E3DPK-M2#T0 supports paralleling due to its positive VCE(sat) temperature coefficient above 100°C, ensuring current sharing stability. Matching gate resistors (RG = 5 Ω typical) and symmetrical layout are required. The RJP30E3DPK-M2#T0's consistent transfer characteristics across production lots further enable scalable multi-device designs.
What is the safe operating area (SOA) limitation for RJP30E3DPK-M2#T0 at 100°C case temperature?
At Tc = 100°C, the RJP30E3DPK-M2#T0's SOA is limited to approximately 25 A at 200 V (10 μs pulse, 1% duty cycle), per the datasheet's derating curve. Continuous operation beyond 40 A or above 360 V violates absolute maximum ratings. The RJP30E3DPK-M2#T0's SOA is defined by both thermal and second-breakdown constraints, not just current or voltage alone.
Is RJP30E3DPK-M2#T0 RoHS compliant and lead-free?
Yes, the RJP30E3DPK-M2#T0 is RoHS compliant and lead-free, consistent with Renesas' standard industrial product policy. The device carries no exemptions and meets EU Directive 2011/65/EU requirements. The RJP30E3DPK-M2#T0 packaging uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for through-hole assembly.
RJP30E3DPK-M2#T0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Current - Collector (Ic) (Max):
- -
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- -
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- -
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
RJP30E3DPK-M2#T0 FAQ
1.How can I place an order for RJP30E3DPK-M2#T0 through Aetrix?
Please submit a Request for Quotation (RFQ) for RJP30E3DPK-M2#T0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RJP30E3DPK-M2#T0 reliable?
The price and inventory of RJP30E3DPK-M2#T0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RJP30E3DPK-M2#T0 is usually 5 days.
3.What payment methods are accepted for RJP30E3DPK-M2#T0?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RJP30E3DPK-M2#T0 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RJP30E3DPK-M2#T0?
RJP30E3DPK-M2#T0 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RJP30E3DPK-M2#T0 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RJP30E3DPK-M2#T0?
For technical support, including RJP30E3DPK-M2#T0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RJP30E3DPK-M2#T0 requirements.
6.How does Aetrix verify that RJP30E3DPK-M2#T0 is sourced from the original manufacturer or authorized distributors?
All RJP30E3DPK-M2#T0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RJP30E3DPK-M2#T0 meets industry standards.
7.What is the process for return or replacement of RJP30E3DPK-M2#T0?
All RJP30E3DPK-M2#T0 units undergo pre-shipment inspection (PSI). If there is an issue with RJP30E3DPK-M2#T0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RJP30E3DPK-M2#T0 part is unused and in its original packaging.
Return procedure for RJP30E3DPK-M2#T0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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