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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SGB02N120ATMA1

Name: SGB02N120ATMA1
Brand: Infineon Technologies
SKU: SGB02N120ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SGB02N120ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SGB02N120ATMA1.pdf

Description:: IGBT 1200V 6.2A 62W TO263-3

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Product details

Overview

SGB02N120ATMA1 from Infineon Technologies is a 1200 V, 2 A NPT (Non-Punch-Through) IGBT optimized for motor controls, inverters, and SMPS applications. It delivers 0.11 mJ turn-off energy at Tj = 25°C, 10 µs short-circuit withstand time at VGE = 15 V, and 3.6 V collector-emitter saturation voltage at Tj = 150°C with IC = 2 A.

For engineers reviewing the SGB02N120ATMA1 datasheet, SGB02N120ATMA1 pinout, SGB02N120ATMA1 application, or SGB02N120ATMA1 equivalent, key selection criteria include rugged NPT architecture, tight parameter distribution across temperature, parallel switching capability, and JEDEC1 qualification for industrial power conversion systems.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology to achieve high ruggedness, temperature-stable VCE(sat) behavior, and consistent dynamic performance across -55°C to +150°C junction range. Its design enables reliable operation under repetitive short-circuit stress up to 1000 events with >1 s recovery intervals.

The device features low tail current during turn-off, resulting in reduced Eoff (0.06–0.15 mJ across temperature), and supports gate drive with ±20 V rating. Internal emitter inductance is 7 nH, measured 5 mm from case, minimizing parasitic oscillation in high-di/dt switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Maximum blocking voltage for high-voltage DC bus applications like industrial inverters.
I_C (DC, T_C = 100°C)	2.8 A - Continuous conduction capability at elevated case temperatures without derating below rated current.
E_off (T_j = 25°C)	0.06–0.08 mJ - Low turn-off loss enabling higher switching frequencies in SMPS and servo drives.
t_SC	10 µs - Guaranteed short-circuit withstand time at V_GE = 15 V, supporting robust protection schemes.
R_thJC	2.0 K/W - Junction-to-case thermal resistance enabling efficient heatsink coupling in TO-263 packages.
V_CE(sat) (T_j = 150°C)	3.6–4.3 V - Predictable saturation voltage over full operating temperature, simplifying thermal design.
Q_Gate	11 nC - Moderate gate charge supporting fast, low-loss switching with standard 91 Ω gate resistor.

Pinout & Package

Supplied in PG-TO-263-3-2 surface-mount package with G–C–E terminal layout (Gate, Collector, Emitter). The package features copper leadframe, Pb-free plating, and MSL1 reflow compatibility (245°C peak).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control input with ±20 V absolute max rating; 4 V typical threshold enables TTL/CMOS-compatible drive.
C	Collector	Main high-side power terminal; electrically isolated from tab; rated for 1200 V DC blocking.
E	Emitter	Power return path and reference for gate drive; internal 7 nH inductance impacts high-speed layout.

Key Features

Feature	Design Value
NPT process technology	Enables tight parameter distribution (±5% V_CE(sat)) and stable switching behavior from -55°C to +150°C.
JEDEC1 qualification	Validated for motor control and inverter reliability requirements including humidity, temperature cycling, and bond wire integrity.
Parallel switching capability	Matched dynamic characteristics and positive V_CE(sat) temperature coefficient allow direct paralleling without current-sharing resistors.
Low E_off vs prior generation	0.11 mJ at 25°C - 22% reduction versus predecessor, improving efficiency in 10–50 kHz SMPS topologies.

Applications

Industrial Motor Drives

High-Voltage SMPS

Use Scenario: 3-phase inverter stage in HVAC compressors and pump controllers operating at 1200 V DC bus.

IC Role / Device Role / Timing Role: Main switching element in 2-level topology; handles 2 A RMS output with 10 µs fault clearance.

Use Value: NPT ruggedness ensures survival under repeated overload transients; 3.6 V V_CE(sat) at 150°C maintains thermal margin at full load.

Use Scenario: Primary-side switch in telecom rectifiers and server PSUs with 800–1000 V DC link.

IC Role / Device Role / Timing Role: Hard-switched IGBT in phase-shifted full-bridge; operates at 20–40 kHz with controlled tail current.

Use Value: 0.06 mJ E_off reduces total switching loss by 18% versus comparable 1200 V devices, improving 80 PLUS Titanium efficiency.

Renewable Energy Inverters

Induction Heating Systems

Use Scenario: DC–AC stage in solar string inverters interfacing 1000+ V PV arrays.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type multilevel configurations; subjected to repetitive short-circuit events during grid faults.

Use Value: 10 µs t_SC enables deterministic desaturation detection and soft-shutdown without external crowbar circuits.

Use Scenario: Resonant half-bridge in domestic induction cooktops with 20–50 kHz operation and rapid thermal cycling.

IC Role / Device Role / Timing Role: Fast-switching IGBT with low Q_Gate (11 nC) and minimal C_iss (205 pF) to reduce gate drive losses.

Use Value: 7 nH internal emitter inductance minimizes voltage overshoot during di/dt > 1 kA/µs, reducing snubber size and cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP20NC120FD	1200 V, 20 A rated; higher I_C but 0.25 mJ E_off at 25°C - 2.3× higher turn-off loss.	Targeted at higher-current motor drives; less suitable for compact SMPS due to larger die and thermal mass.	Select when system requires >10 A peak current and can accommodate higher conduction loss and thermal inertia.
IXYS IXGN20N120B3	1200 V, 20 A; trench-gate field-stop structure; 0.14 mJ E_off; 15 µs t_SC.	Optimized for high-reliability UPS and traction inverters; not qualified to JEDEC1 for motor control.	Prefer where extended short-circuit immunity is critical and JEDEC1 compliance is not mandated.

Compared with STGP20NC120FD and IXGN20N120B3, SGB02N120ATMA1 offers lower E_off, tighter V_CE(sat) distribution, and JEDEC1 validation - making it optimal for space-constrained, thermally sensitive 2 A industrial SMPS and servo amplifier designs.

Availability

SGB02N120ATMA1 is available at Aetrix Electronics and suitable for motor controls, high-voltage SMPS, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for SGB02N120ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SGB02N120ATMA1 belongs to Infineon's SGB-series of NPT IGBTs, engineered specifically for cost-sensitive, high-reliability 1200 V power conversion where ruggedness, thermal stability, and JEDEC-qualified robustness are mandatory.

FAQ

What is the maximum gate-emitter voltage rating for SGB02N120ATMA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping or active regulation to prevent transient overshoot during switching transitions.

Does SGB02N120ATMA1 include an integrated freewheeling diode?

No, SGB02N120ATMA1 is a standalone IGBT without an integrated body diode. External ultrafast or SiC Schottky diodes must be used in inductive load applications to handle reverse recovery current and minimize switching losses.

Can SGB02N120ATMA1 be operated in parallel with identical units?

Yes - its NPT structure provides a positive temperature coefficient for V_CE(sat), ensuring natural current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to maintain <5°C junction temperature delta between devices.

What is the meaning of "PG-TO-263-3-2" in the package designation?

PG-TO-263-3-2 denotes Infineon's proprietary variant of the TO-263 (D²PAK) package: 3 terminals (G–C–E), 2-mm lead pitch, and green (Pb-free) plating. The "PG" prefix indicates qualified for industrial-grade reflow profiles per J-STD-020 MSL1.

SGB02N120ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 6.2 A

Current - Collector Pulsed (Icm):: 9.6 A

Vce(on) (Max) @ Vge, Ic:: 3.6V @ 15V, 2A

Power - Max:: 62 W

Switching Energy:: 220µJ

Input Type:: Standard

Gate Charge:: 11 nC

Td (on/off) @ 25°C:: 23ns/260ns

Test Condition:: 800V, 2A, 91Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SGB02N120ATMA1 FAQ

1.How can I place an order for SGB02N120ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGB02N120ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGB02N120ATMA1 reliable?

The price and inventory of SGB02N120ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGB02N120ATMA1 is usually 5 days.

3.What payment methods are accepted for SGB02N120ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGB02N120ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGB02N120ATMA1?

SGB02N120ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGB02N120ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGB02N120ATMA1?

For technical support, including SGB02N120ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGB02N120ATMA1 requirements.

6.How does Aetrix verify that SGB02N120ATMA1 is sourced from the original manufacturer or authorized distributors?

All SGB02N120ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGB02N120ATMA1 meets industry standards.

7.What is the process for return or replacement of SGB02N120ATMA1?

All SGB02N120ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGB02N120ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGB02N120ATMA1 part is unused and in its original packaging.

Return procedure for SGB02N120ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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