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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SGB07N120ATMA1

Name: SGB07N120ATMA1
Brand: Infineon Technologies
SKU: SGB07N120ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SGB07N120ATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SGB07N120ATMA1.pdf

Description:: IGBT 1200V 16.5A 125W TO263-3-2

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Product details

Overview

SGB07N120ATMA1 from Infineon Technologies is a 1200 V, 8 A NPT (Non-Punch-Through) IGBT optimized for high-voltage switching in motor controls, inverters, and SMPS. It delivers 0.7 mJ turn-off energy at T_j = 25°C, 10 µs short-circuit withstand time at V_GE = 15 V, and V_CE(sat) = 2.5 V (typ.) at I_C = 8 A and T_j = 25°C. Its PG-TO-263-3-2 (D²PAK) package supports robust thermal management in industrial power conversion.

For engineers reviewing the SGB07N120ATMA1 datasheet, SGB07N120ATMA1 pinout, SGB07N120ATMA1 application, or SGB07N120ATMA1 equivalent, key selection criteria include short-circuit ruggedness, temperature-stable V_CE(sat), gate charge (70–90 nC), switching energy trade-offs across T_j, and parallel-switching capability enabled by tight parameter distribution in NPT technology.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology, delivering high ruggedness, stable electrical parameters over temperature (–55°C to +150°C), and inherent suitability for paralleling without external current-sharing resistors. Its design emphasizes safe operation under transient overload and short-circuit conditions.

The device features a 7 nH internal emitter inductance, 720–870 pF input capacitance (C_iss), and gate threshold voltage (V_GE(th)) of 3–5 V - enabling reliable turn-on with standard ±15 V gate drivers while maintaining noise immunity. Switching behavior is characterized with 47 Ω gate resistance under standardized inductive-load test conditions (V_CC = 800 V, I_C = 8 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Maximum blocking voltage for use in 1000 V DC-link systems with safety margin.
I_C (DC, T_C = 25°C)	16.5 A - Continuous collector current rating at low case temperature; derates to 7.9 A at T_C = 100°C.
E_off	0.7 mJ (T_j = 25°C) - Quantifies energy dissipated during turn-off; critical for thermal design in hard-switched topologies.
t_SC	10 µs - Guaranteed short-circuit withstand time at V_GE = 15 V and T_j ≤ 150°C; enables robust protection response.
V_CE(sat)	2.5 V (typ., T_j = 25°C, I_C = 8 A) - Low saturation voltage reduces conduction losses in medium-frequency PWM applications.
Q_gate	70–90 nC - Gate charge determines driver power requirement and influences switching speed vs. EMI trade-off.
R_thJC	1 K/W - Junction-to-case thermal resistance defines minimum heatsink requirement for 125 W power dissipation.

Pinout & Package

Package: PG-TO-263-3-2 (D²PAK), surface-mount, isolated tab (collector), RoHS-compliant Pb-free lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main high-side power terminal	Electrically connected to metal tab; requires insulated mounting and direct thermal path to heatsink.
Gate	Control input	High-impedance MOS-controlled terminal; driven with ±20 V max; sensitive to ESD and ringing.
Emitter	Power return / reference node	Low-inductance emitter connection critical for stable switching; internal L_E = 7 nH measured 5 mm from case.

Key Features

Feature	Design Value
NPT technology	Enables tight parameter distribution (±5% V_CE(sat)), stable performance from –55°C to +150°C, and intrinsic paralleling capability without emitter resistors.
10 µs short-circuit withstand	Allows time for protection circuitry (e.g., desat detection + blanking) to respond before destructive failure occurs.
JEDEC J-STD-020 qualified	Validated for reflow soldering per MSL1; supports automated SMT assembly with peak temperature up to 245°C.
Low E_off vs. prior generation	0.7 mJ (25°C) enables higher efficiency in 10–20 kHz inverter stages compared to legacy 1200 V IGBTs with >1.0 mJ E_off.

Applications

Industrial Motor Drives

Photovoltaic Inverters

Use Scenario: Three-phase 10–30 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side switch in 6-pack IGBT module configuration; handles 800 V DC-link with 16 kHz PWM.

Use Value: 10 µs short-circuit rating ensures survivability during phase-to-phase fault events; low V_CE(sat) reduces thermal load on heatsink.

Use Scenario: Two-level string inverters converting 600–1000 V DC from solar arrays to 230 V AC grid.

IC Role / Device Role / Timing Role: Main switching device in H-bridge output stage; operates at 12–18 kHz with unipolar modulation.

Use Value: Tight V_CE(sat) distribution minimizes current imbalance when paralleled; NPT ruggedness supports long-term field reliability.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Online double-conversion UPS with 400 V DC intermediate bus and 50/60 Hz output.

IC Role / Device Role / Timing Role: Inverter-stage switch in full-bridge topology; switches at 4–8 kHz with soft-start and overload handling.

Use Value: 125 W power dissipation rating supports continuous operation under 120% load; JEDEC qualification ensures assembly yield.

Use Scenario: 5–15 kW resonant induction cooktops and industrial heating generators.

IC Role / Device Role / Timing Role: Half-bridge switch operating at 20–50 kHz in zero-voltage switching (ZVS) circuits.

Use Value: Low C_iss (720–870 pF) and controlled Q_gate enable precise ZVS timing; 150°C T_j rating accommodates high ambient temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N120B3	1200 V / 75 A rated; higher current, higher Q_gate (160 nC), TO-247 package; R_thJC = 0.35 K/W.	Targeted at higher-power (>20 kW) inverters requiring lower conduction loss and forced-air cooling.	Select when system needs >15 A continuous current and can accommodate larger footprint and higher gate drive power.
STMicroelectronics STGW30H120DF2	1200 V / 30 A; trench-gate field-stop IGBT; lower V_CE(sat) (1.8 V typ.), but t_SC = 6 µs; TO-247 package.	Better conduction efficiency at high I_C, but reduced short-circuit margin limits use in unprotected motor drives.	Prefer where thermal budget is tight and protection circuitry guarantees <6 µs fault clearance; avoid in open-loop or cost-sensitive industrial drives.

Compared with IXGN75N120B3 and STGW30H120DF2, the SGB07N120ATMA1 offers balanced trade-offs: moderate current rating with superior short-circuit ruggedness and surface-mount compatibility, making it optimal for space-constrained 10–20 kW industrial inverters where reliability and manufacturability are prioritized over peak efficiency.

Availability

SGB07N120ATMA1 is available at Aetrix Electronics and suitable for industrial motor controls, photovoltaic inverters, and uninterruptible power supplies requiring stable component supply, JEDEC-qualified SMT assembly, and proven field reliability in high-temperature environments.

Supply support for SGB07N120ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

The SGB07N120ATMA1 belongs to Infineon's SGB series of NPT IGBTs, designed specifically for cost-sensitive, high-reliability industrial power conversion where ruggedness, thermal stability, and SMT compatibility outweigh ultra-low conduction loss requirements.

FAQ

What gate resistor value is recommended for SGB07N120ATMA1 in a 16 kHz motor drive?

A 47 Ω gate resistor is specified in the datasheet for characterization at T_j = 25°C and 150°C, yielding balanced switching speed and EMI. For 16 kHz operation, this value limits dV/dt to ~5 kV/µs and keeps E_off at 0.7–0.9 mJ, avoiding excessive heating while maintaining control loop stability.

Can SGB07N120ATMA1 be paralleled without emitter resistors?

Yes - its NPT structure provides tight V_CE(sat) distribution (±5%) and positive temperature coefficient above 100°C, enabling stable current sharing. Parallel operation requires matched gate drive layout, identical PCB trace inductance, and symmetrical thermal mounting to avoid thermal runaway.

Is the SGB07N120ATMA1 suitable for 1000 V DC-link applications?

Yes - its 1200 V V_CE rating provides 20% margin over 1000 V DC-link, satisfying IEC 61800-5-1 surge and derating requirements. The 10 µs short-circuit withstand time and 150°C T_j rating further support robust operation under transient overvoltage and overload conditions.

Does the device include an integrated freewheeling diode?

No - the SGB07N120ATMA1 is a standalone IGBT. External fast-recovery or SiC Schottky diodes must be used in anti-parallel configuration. Diode reverse recovery energy contributes to total E_ts, as noted in the datasheet's "Energy losses include tail and diode reverse recovery" footnote.

SGB07N120ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 16.5 A

Current - Collector Pulsed (Icm):: 27 A

Vce(on) (Max) @ Vge, Ic:: 3.6V @ 15V, 8A

Power - Max:: 125 W

Switching Energy:: 1mJ

Input Type:: Standard

Gate Charge:: 70 nC

Td (on/off) @ 25°C:: 27ns/440ns

Test Condition:: 800V, 8A, 47Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

SGB07N120ATMA1 FAQ

1.How can I place an order for SGB07N120ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGB07N120ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGB07N120ATMA1 reliable?

The price and inventory of SGB07N120ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGB07N120ATMA1 is usually 5 days.

3.What payment methods are accepted for SGB07N120ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGB07N120ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGB07N120ATMA1?

SGB07N120ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGB07N120ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGB07N120ATMA1?

For technical support, including SGB07N120ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGB07N120ATMA1 requirements.

6.How does Aetrix verify that SGB07N120ATMA1 is sourced from the original manufacturer or authorized distributors?

All SGB07N120ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGB07N120ATMA1 meets industry standards.

7.What is the process for return or replacement of SGB07N120ATMA1?

All SGB07N120ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGB07N120ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGB07N120ATMA1 part is unused and in its original packaging.

Return procedure for SGB07N120ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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