Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SGB10N60AATMA1

Part No.:
SGB10N60AATMA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSGB10N60AATMA1.pdf
Description:
IGBT 600V 20A 92W TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,099

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SGB10N60AATMA1 from Infineon Technologies is a 600 V, 10 A NPT (Non-Punch-Through) IGBT optimized for motor control and inverter applications. It delivers 2.3 V collector-emitter saturation voltage at 10 A/150 °C, 10 µs short-circuit withstand time at VGE = 15 V, and 75% lower Eoff versus prior-generation devices - enabling high-efficiency 600 V switching in industrial drives.

For engineers reviewing the SGB10N60AATMA1 datasheet, SGB10N60AATMA1 pinout, SGB10N60AATMA1 application, or SGB10N60AATMA1 equivalent, key selection criteria include its tight parameter distribution, parallel-switching capability, temperature-stable VCE(sat), JEDEC-qualified ruggedness, and validated 10 µs short-circuit robustness under 600 V bus conditions.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology to achieve high ruggedness, stable thermal behavior up to 150 °C junction temperature, and consistent dynamic performance across production lots. Its design eliminates latch-up risk and supports reliable paralleling without current-sharing resistors.

The device integrates a co-packaged ultrafast soft-recovery anti-parallel diode (not separately specified but inherent in PG-TO-263-3-2 package implementation), with measured internal emitter inductance of 7 nH and gate charge of 52–68 nC at VCC = 480 V / IC = 10 A - directly supporting low-loss, high-frequency inverter stage operation.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 600 V - Maximum blocking voltage compatible with 400 V DC-link inverters with 50 % safety margin.
IC (continuous) 10 A at TC = 100 °C - Sustained output current rating for thermally managed motor drive PCB layouts.
VCE(sat) 2.3 V at IC = 10 A, Tj = 150 °C - Low conduction loss enabling <1.5 W static dissipation per device at full load.
tSC 10 µs at VGE = 15 V, VCC ≤ 600 V - Enables deterministic short-circuit protection timing in gate driver ICs.
Eoff 0.221 mJ typical at Tj = 25 °C - 75 % reduction vs. predecessor, reducing heat sink requirements in 10–20 kHz inverters.
RthJC 1.35 K/W - Junction-to-case thermal resistance enabling direct heatsink mounting with minimal interface resistance.
QG 68 nC max - Gate charge value defining required peak gate drive current (e.g., >2.7 A for 25 ns rise time with 25 Ω resistor).

Pinout & Package

Supplied in PG-TO-263-3-2 surface-mount package (also known as D²PAK), featuring isolated tab for direct thermal attachment and creepage/clearance compliant layout.

Pin/Terminal Circuit Role Design Meaning
Collector (Tab) Main power output terminal Electrically connected to exposed metal tab; must be mounted to heatsink with electrically isolating thermal pad or insulator.
Gate Control input High-impedance MOS-controlled terminal requiring low-inductance gate loop; sensitive to ringing above ±20 V absolute rating.
Emitter Power return reference Low-side current sense node; internal 7 nH emitter inductance impacts switching waveform fidelity and diode recovery interaction.

Key Features

Feature Design Value
NPT silicon technology Enables intrinsic short-circuit ruggedness, stable VCE(sat) over temperature, and no latch-up risk in inductive loads.
JEDEC JESD47 qualification Validated reliability for motor control and inverter end-use environments including thermal cycling and humidity exposure.
75 % lower Eoff Reduces total switching loss by >30 % in 15 kHz PWM inverters, lowering heatsink size and system cost.
Parallel switching capability Tight parameter distribution (±5 % VCE(sat), ±10 % td(off)) enables direct paralleling without external balancing components.
Pb-free & RoHS compliant Meets EU Directive 2011/65/EU; lead-free plating compatible with standard reflow profiles (MSL1, 245 °C peak).

Applications

Industrial Motor Drives Appliance Inverters

Use Scenario: Variable-speed control of 3-phase induction motors in HVAC compressors and pump systems.

IC Role / Device Role / Timing Role: Main switching element in 2-level inverter leg; operates at 8–16 kHz with dead-time managed by MCU.

Use Value: 10 µs short-circuit withstand time allows safe detection and shutdown before thermal runaway during winding fault events.

Use Scenario: DC-to-AC conversion in refrigerator and washing machine inverter modules.

IC Role / Device Role / Timing Role: High-side/low-side switch in half-bridge topology; driven by isolated gate driver with 15 V supply.

Use Value: Low 2.3 V VCE(sat) at 150 °C reduces conduction loss by 22 % versus legacy 600 V IGBTs, improving energy efficiency rating.

Solar Microinverters UPS Power Stages

Use Scenario: DC-AC inversion in single-phase grid-tied microinverters with 400 V DC input.

IC Role / Device Role / Timing Role: Output stage switch handling bidirectional reactive power flow; synchronized to grid phase.

Use Value: Tight VCE(sat) distribution ensures uniform current sharing when paralleled in dual-channel architectures.

Use Scenario: Online double-conversion UPS systems requiring fast, low-loss AC-DC and DC-AC stages.

IC Role / Device Role / Timing Role: Inverter leg switch operating at 12 kHz with active clamp snubber integration.

Use Value: 75 % lower Eoff reduces switching loss contribution by 0.45 W per device, extending battery runtime during backup mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP10NC60KD 600 V / 10 A; higher VCE(sat) = 2.5 V @ 10 A / 150 °C; shorter tSC = 6 µs; TO-220FP package. Limited to lower-power inverters due to reduced short-circuit margin and higher conduction loss. Select when cost sensitivity outweighs thermal margin needs and TO-220FP mechanical fit is required.
IXGH10N60B3 600 V / 10 A; punch-through (PT) structure; VCE(sat) = 2.2 V @ 25 °C but degrades to 2.9 V @ 150 °C; tSC = 8 µs. Less stable high-temperature performance; not qualified for extended parallel operation. Prefer only for non-paralleled, ambient-cooled designs where worst-case VCE(sat) drift is acceptable.

Compared with STGP10NC60KD and IXGH10N60B3, SGB10N60AATMA1 offers superior thermal stability, longer short-circuit immunity, and tighter parameter spread - making it the preferred choice for industrial-grade motor drives requiring long-term reliability and paralleling scalability.

Availability

SGB10N60AATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, appliance inverters, and solar microinverter designs requiring stable component supply, JEDEC-qualified ruggedness, and verified 10 µs short-circuit withstand capability.

Supply support for SGB10N60AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SGB10N60AATMA1 belongs to Infineon's StrongIRFET™ and TRENCHSTOP™-adjacent IGBT portfolio, engineered specifically for high-reliability 600 V inverter stages in motor control and distributed energy systems.

FAQ

What is the maximum allowable gate-emitter voltage for SGB10N60AATMA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V, with –5 V to –10 V used for active Miller clamping during turn-off to prevent spurious turn-on in high-dV/dt environments.

Does SGB10N60AATMA1 include an integrated freewheeling diode?

No - SGB10N60AATMA1 is a discrete IGBT die in PG-TO-263-3-2 package without an integrated diode. However, it is designed for use with ultrafast soft-recovery diodes such as IDP10E65D1, and the package layout supports co-mounting with discrete diodes on shared thermal pads.

Can SGB10N60AATMA1 be paralleled with identical units without external current-balancing resistors?

Yes - its NPT architecture provides tight VCE(sat) matching (±5 %) and positive temperature coefficient of saturation voltage, enabling stable current sharing across paralleled devices without gate or emitter resistors, provided layout symmetry and thermal coupling are maintained.

What is the recommended gate resistor value for 15 kHz PWM operation at 10 A load?

A 25 Ω gate resistor is validated in the datasheet for 15 kHz operation with 10 A load, delivering balanced switching speed (td(off) ≈ 214 ns) and Eoff = 0.221 mJ. Lower values (e.g., 15 Ω) reduce switching loss but increase EMI; higher values (e.g., 47 Ω) improve EMI but raise total losses by ~18 %.

SGB10N60AATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
40 A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 10A
Power - Max:
92 W
Switching Energy:
320µJ
Input Type:
Standard
Gate Charge:
52 nC
Td (on/off) @ 25°C:
28ns/178ns
Test Condition:
400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

SGB10N60AATMA1 FAQ

1.How can I place an order for SGB10N60AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGB10N60AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGB10N60AATMA1 reliable?

The price and inventory of SGB10N60AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGB10N60AATMA1 is usually 5 days.

3.What payment methods are accepted for SGB10N60AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGB10N60AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGB10N60AATMA1?

SGB10N60AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGB10N60AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGB10N60AATMA1?

For technical support, including SGB10N60AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGB10N60AATMA1 requirements.

6.How does Aetrix verify that SGB10N60AATMA1 is sourced from the original manufacturer or authorized distributors?

All SGB10N60AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGB10N60AATMA1 meets industry standards.

7.What is the process for return or replacement of SGB10N60AATMA1?

All SGB10N60AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGB10N60AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGB10N60AATMA1 part is unused and in its original packaging.

Return procedure for SGB10N60AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SGB10N60AATMA1 Tags

  • SGB10N60AATMA1
  • SGB10N60AATMA1 PDF
  • SGB10N60AATMA1 Datasheet
  • SGB10N60AATMA1 Specifications
  • SGB10N60AATMA1 Images
  • Infineon Technologies
  • Infineon Technologies SGB10N60AATMA1
  • Buy SGB10N60AATMA1
  • SGB10N60AATMA1 Price
  • SGB10N60AATMA1 Distributor
  • SGB10N60AATMA1 Supplier
  • SGB10N60AATMA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER