Infineon Technologies SGB15N120ATMA1

Overview

SGB15N120ATMA1 from Infineon is a 1200 V, 15 A NPT (Non-Punch-Through) IGBT optimized for high-efficiency motor controls, inverters, and SMPS applications. It delivers 1.5 mJ turn-off energy at 800 V/15 A, 10 µs short-circuit withstand time at T_j ≤ 150 °C, and 2.5–3.6 V collector-emitter saturation voltage across temperature. Its PG-TO-263-3-2 (D²PAK) package supports robust thermal management in industrial power stages.

For engineers reviewing the SGB15N120ATMA1 datasheet, SGB15N120ATMA1 pinout, SGB15N120ATMA1 application, or SGB15N120ATMA1 equivalent, key selection criteria include short-circuit ruggedness, switching loss trade-offs at 150 °C, gate charge (130–175 nC), and parallel-switching capability enabled by tight parameter distribution in NPT technology.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology, delivering temperature-stable V_CE(sat) and highly consistent dynamic parameters across production lots. Its design enables reliable parallel operation without current-sharing resistors due to positive temperature coefficient of V_CE(sat) and minimal parameter spread.

The device integrates a monolithic anti-parallel diode with soft recovery characteristics, supporting inductive load switching with low E_off (0.8–2.0 mJ) and reduced voltage overshoot. Gate drive requirements are defined by Q_gate = 130–175 nC and ±20 V V_GE rating, with critical timing governed by t_d(off) = 580–780 ns and t_f = 22–37 ns across temperature.

Key Specifications

Pinout & Package

Package: PG-TO-263-3-2 (D²PAK), surface-mount, isolated tab, single-side heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP15H120DF and IXGN15N120B3, SGB15N120ATMA1 offers superior short-circuit ruggedness and tighter parameter consistency-critical for paralleled configurations-while maintaining competitive switching loss and thermal performance in compact D²PAK packages.

Availability

SGB15N120ATMA1 is available at Aetrix Electronics and suitable for motor controls, inverters, and SMPS requiring stable component supply, JEDEC-qualified reflow compatibility, and long-lifecycle availability in industrial power electronics.

Supply support for SGB15N120ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for automotive, industrial, and renewable energy markets.

SGB15N120ATMA1 belongs to Infineon's High Voltage IGBT portfolio designed specifically for rugged, high-reliability 1200 V power conversion in motor drives, solar inverters, and industrial SMPS.

FAQ

What is the maximum gate-emitter voltage rating for SGB15N120ATMA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V for reliable turn-on and noise-immune turn-off. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent transient overvoltage during switching transients or layout-induced ringing.

Does SGB15N120ATMA1 include an integrated freewheeling diode?

Yes, it features a monolithic anti-parallel diode fabricated on the same die, optimized for soft reverse recovery with low Q_rr and minimal voltage overshoot. This eliminates need for discrete diode placement and reduces layout parasitics in half-bridge configurations, though external snubbers may still be required in high-dV/dt applications.

Can SGB15N120ATMA1 be operated in parallel with identical units?

Yes-its NPT structure provides a positive temperature coefficient for V_CE(sat), ensuring natural current sharing across temperature gradients. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors (typically 10–33 Ω) to suppress oscillation; no emitter ballast resistors are needed.

What is the thermal resistance from junction to case, and how is it measured?

R_thJC is 0.63 K/W, measured per JEDEC standard JESD51-14 using infrared thermography on the center of the collector tab under steady-state 198 W power dissipation. This value assumes direct thermal interface between the isolated metal tab and heatsink with ≤0.1 mm thermal interface material thickness and uniform pressure ≥50 psi.