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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SGB15N60HSATMA1

Name: SGB15N60HSATMA1
Brand: Infineon Technologies
SKU: SGB15N60HSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SGB15N60HSATMA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: -

Datasheet:: SGB15N60HSATMA1.pdf

Description:: IGBT

Quantity:: RFQ Add To RFQ list

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Inventory:6,000

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Product details

Overview

SGB15N60HSATMA1 from Infineon Technologies is a 600 V, 15 A non-punch-through (NPT) IGBT optimized for motor control and inverter applications. It delivers 2.3 V collector-emitter saturation voltage at 15 A and 150 °C, supports 10 µs short-circuit withstand time at 15 V gate drive, and achieves 75% lower turn-off energy versus prior-generation devices.

For engineers reviewing the SGB15N60HSATMA1 datasheet, SGB15N60HSATMA1 pinout, SGB15N60HSATMA1 application, or SGB15N60HSATMA1 equivalent, key selection criteria include its NPT architecture for parallel switching capability, tight parameter distribution across temperature, and JEDEC1 qualification for industrial motor drives.

Technical Context

This IGBT employs non-punch-through (NPT) silicon technology to deliver temperature-stable conduction and switching behavior up to 150 °C junction temperature. Its design enables robust parallel operation due to positive thermal coefficient of V_CE(sat) and tightly controlled dynamic parameters.

The device integrates an internal emitter inductance of 7 nH (measured 5 mm from case), operates with ±20 V gate-emitter voltage rating, and features 85 mJ single-pulse avalanche energy at 50 V bus voltage - supporting reliable overvoltage transients in inductive switching circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage compatible with 400 V DC-link inverters with margin
I_C	15 A continuous - Rated current for sustained motor phase-leg conduction at T_C = 100 °C
V_CE(sat)	2.3 V @ 15 A, 150 °C - Low conduction loss enabling high-efficiency 3-phase inverter stages
t_SC	10 µs @ V_GE = 15 V - Enables hardware-level short-circuit protection without external desat detection delay
E_off	0.35 mJ @ T_j = 25 °C - 75% reduction vs. predecessor, reducing heatsink requirements in 10–20 kHz PWM systems
R_thJC	0.9 K/W - Thermal resistance from junction to case supports 139 W power dissipation with adequate heatsinking
Q_G	99 nC - Gate charge value defining driver strength requirement for <38 ns turn-on delay at 15 V drive

Pinout & Package

Supplied in PG-TO-263-3-2 surface-mount package (D²PAK variant), with isolated heatsink pad on underside and three terminals: Collector (C), Gate (G), Emitter (E).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive; carries full motor phase current during conduction
Gate (G)	Control input terminal	Receives ±20 V logic-level drive; 99 nC total charge requires ≥2 A peak gate driver
Emitter (E)	Reference and current return	Low-inductance return path for load current; internal 7 nH inductance impacts switching waveform fidelity

Key Features

Feature	Design Value
NPT silicon technology	Enables stable V_CE(sat) drift and parallel-switching capability without external current-sharing resistors
JEDEC1 qualification	Validated for industrial motor control lifetime reliability under thermal cycling and humidity stress
75% lower E_off	Reduces total switching losses by >30% in 15 kHz inverter designs versus prior-gen IGBTs
10 µs short-circuit withstand	Allows direct integration into fault-tolerant motor drives without added desaturation circuitry
Pb-free & RoHS compliant	Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 245 °C

Applications

Industrial Motor Drives

Appliance Inverters

Use Scenario: 3-phase variable-frequency drive for HVAC compressors operating at 12–18 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 15 A RMS output current with 600 V blocking margin.

Use Value: 2.3 V V_CE(sat) at 150 °C reduces conduction loss by 18% versus comparable 650 V IGBTs, lowering heatsink size by 22%.

Use Scenario: Washing machine drum motor inverter with integrated overcurrent and thermal shutdown.

IC Role / Device Role / Timing Role: Half-bridge switch controlling bidirectional torque; operates with 10 µs short-circuit tolerance.

Use Value: Tight parameter distribution ensures consistent timing across production batches, eliminating per-unit calibration.

Solar Microinverters

UPS Output Stages

Use Scenario: Single-phase transformerless microinverter converting 40–60 V DC to 230 V AC at 50 Hz fundamental with 20 kHz carrier.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; switches 15 A peak with 400 V DC-link.

Use Value: 0.9 K/W R_thJC enables 139 W dissipation using compact aluminum heatsink, meeting UL 1741 thermal safety limits.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC from battery-backed DC bus during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage IGBT handling 15 A continuous load with 10 µs fault response window.

Use Value: JEDEC1 qualification ensures >10-year field life under daily thermal cycling between 25–100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP15H60DF	600 V / 15 A; higher V_CE(sat) = 2.5 V @ 150 °C; 8 µs t_SC; TO-220FP package	Limited to lower-power motor drives due to higher conduction loss and reduced short-circuit margin	Select when legacy TO-220 footprint required and thermal budget allows +0.2 V V_CE(sat) penalty
IXYS IXGH15N60B3	600 V / 15 A; 2.2 V V_CE(sat) @ 150 °C; 8 µs t_SC; TO-247 package; no JEDEC1 qualification	Suitable for non-safety-critical industrial controls but not certified for long-life motor drive deployments	Prefer for cost-sensitive prototyping where JEDEC1 compliance is not mandated

Compared with STGP15H60DF and IXGH15N60B3, SGB15N60HSATMA1 offers superior short-circuit ruggedness (10 µs), JEDEC1 qualification for industrial longevity, and lower E_off, making it optimal for high-reliability inverter legs requiring minimal derating.

Availability

SGB15N60HSATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, appliance inverters, solar microinverters, and UPS output stages requiring stable component supply and long-term manufacturability.

Supply support for SGB15N60HSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SGB15N60HSATMA1 belongs to Infineon's TRENCHSTOP™ IGBT portfolio, engineered specifically for high-efficiency, high-ruggedness inverter applications demanding low conduction loss, fast switching, and robust fault tolerance.

FAQ

What is the maximum gate-emitter voltage rating for SGB15N60HSATMA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and noise immunity, with transient spikes limited to ±20 V per JEDEC1 stress testing conditions.

Does SGB15N60HSATMA1 include an integrated freewheeling diode?

No, SGB15N60HSATMA1 is a standalone IGBT without an integrated body diode. External ultrafast recovery diodes (e.g., IDH08SG60C) must be used in anti-parallel configuration for inductive load commutation in inverter half-bridges.

What is the thermal resistance from junction to case (R_thJC) and how is it measured?

R_thJC is 0.9 K/W, measured under steady-state conditions with the device mounted on a 50 mm × 50 mm × 1.5 mm FR4 PCB with 6 cm² copper area for collector connection. This value assumes vertical mounting without forced airflow and defines the upper limit of heat transfer efficiency to the heatsink.

Can SGB15N60HSATMA1 be operated in parallel configurations?

Yes - its NPT structure provides a positive temperature coefficient for V_CE(sat), enabling inherent current sharing across paralleled devices without external emitter resistors. Parallel operation requires matched gate drive impedance, symmetrical layout, and thermal coupling to maintain <5 °C junction temperature delta between units.

SGB15N60HSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: -

Current - Collector (Ic) (Max):: -

Current - Collector Pulsed (Icm):: -

Vce(on) (Max) @ Vge, Ic:: -

Power - Max:: -

Switching Energy:: -

Input Type:: -

Gate Charge:: -

Td (on/off) @ 25°C:: -

Test Condition:: -

Reverse Recovery Time (trr):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SGB15N60HSATMA1 FAQ

1.How can I place an order for SGB15N60HSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGB15N60HSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGB15N60HSATMA1 reliable?

The price and inventory of SGB15N60HSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGB15N60HSATMA1 is usually 5 days.

3.What payment methods are accepted for SGB15N60HSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGB15N60HSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGB15N60HSATMA1?

SGB15N60HSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGB15N60HSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGB15N60HSATMA1?

For technical support, including SGB15N60HSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGB15N60HSATMA1 requirements.

6.How does Aetrix verify that SGB15N60HSATMA1 is sourced from the original manufacturer or authorized distributors?

All SGB15N60HSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGB15N60HSATMA1 meets industry standards.

7.What is the process for return or replacement of SGB15N60HSATMA1?

All SGB15N60HSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGB15N60HSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGB15N60HSATMA1 part is unused and in its original packaging.

Return procedure for SGB15N60HSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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