Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SGD02N120BUMA1

Part No.:
SGD02N120BUMA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSGD02N120BUMA1.pdf
Description:
IGBT NPT 1200V 6.2A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,215

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SGD02N120BUMA1 from Infineon Technologies is a 1200 V, 2 A NPT (Non-Punch-Through) IGBT in PG-TO-252-3-11 (D-PAK) package, optimized for motor controls, inverters, and SMPS. It delivers 0.11 mJ turn-off energy at Tj = 25°C, 10 µs short-circuit withstand time at VGE = 15 V, and 3.6 V typical VCE(sat) at IC = 2 A and Tj = 150°C.

For engineers reviewing the SGD02N120BUMA1 datasheet, SGD02N120BUMA1 pinout, SGD02N120BUMA1 application, or SGD02N120BUMA1 equivalent, this device offers verified NPT-technology ruggedness, tight parameter distribution, parallel-switching capability, and JEDEC1 qualification for industrial power conversion systems requiring stable high-voltage switching performance.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology, enabling temperature-stable VCE(sat) and high ruggedness across -55°C to +150°C operation. Its 2.0 K/W junction-to-case thermal resistance supports reliable heat transfer in surface-mount applications with PCB copper area.

The device features low dynamic losses-0.22–0.29 mJ total switching energy at 25°C and 0.38–0.48 mJ at 150°C-with gate charge of 11 nC and reverse transfer capacitance of 12–14 pF, enabling efficient gate drive design using standard ±15 V logic-level drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - Withstands DC bus voltages up to 1200 V in industrial inverters and HV SMPS.
IC (DC, TC = 100°C) 2.8 A - Continuous current rating suitable for low-power motor drives and auxiliary power stages.
Eoff 0.11 mJ @ Tj = 25°C - Enables high-frequency switching with reduced thermal stress in 10–100 kHz range.
tSC 10 µs @ VGE = 15 V - Provides deterministic fault response window for external short-circuit protection circuitry.
RthJC 2.0 K/W - Allows direct thermal modeling from die to heatsink via D-PAK mounting pad on FR4 PCB.
VCE(sat) 3.6 V typ. @ IC = 2 A, Tj = 150°C - Low conduction loss enables compact thermal design without forced air cooling.
QG 11 nC - Compatible with low-current gate drivers (e.g., 1–2 A peak) and reduces driver power consumption.

Pinout & Package

SGD02N120BUMA1 is housed in PG-TO-252-3-11 (D-PAK) package with exposed collector tab for thermal and electrical connection. The three terminals are arranged in standard D-PAK footprint: Gate (left), Emitter (center), Collector (right, soldered tab).

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control input Receives ±20 V rated gate drive signal; 11 nC charge requires <100 ns rise/fall for optimal switching.
Emitter (E) Reference node Serves as common return path for gate drive and load current; must be low-inductance layout to avoid shoot-through.
Collector (C) High-side power output Exposed metal tab carries full load current and dissipates heat directly into PCB copper; electrically tied to output rail.

Key Features

Feature Design Value
NPT process technology Delivers tight VCE(sat) distribution (±0.2 V) and stable SOA across temperature, enabling predictable parallel operation.
Short-circuit robustness Guaranteed 10 µs withstand time under 1200 V bus conditions, allowing time for external DESAT detection and shutdown.
Low Eoff 0.11 mJ at 25°C - 40% lower than prior generation - reduces heatsink size and improves efficiency in 20–50 kHz SMPS designs.
JEDEC1 qualification Validated for motor control and inverter applications per JESD47 reliability standards, including HTRB, HTGB, and TC testing.
Pb-free & RoHS compliant Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile (MSL3), supporting lead-free manufacturing.

Applications

Industrial Motor Drives Photovoltaic Inverters

Use Scenario: Single-phase BLDC or PMSM drives in HVAC blowers and pumps operating at 20–40 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switch in half-bridge topology handling 1200 V DC link with 2 A RMS output current.

Use Value: 10 µs short-circuit tolerance enables safe stall detection; 3.6 V VCE(sat) at 150°C minimizes conduction loss during continuous duty cycle.

Use Scenario: DC-AC stage in string inverters converting 800–1000 V PV array voltage to grid-synchronized AC.

IC Role / Device Role / Timing Role: IGBT switch in NPC or T-type three-level inverter leg, operating with 15 V gate drive and 91 Ω gate resistor.

Use Value: 0.11 mJ Eoff reduces switching loss by ~35% vs legacy 1200 V IGBTs, improving inverter efficiency above 96% at partial load.

Induction Heating Power Stages Uninterruptible Power Supplies

Use Scenario: Resonant half-bridge in 20–50 kHz induction cooktops delivering 1.5–2.5 kW output power.

IC Role / Device Role / Timing Role: Fast-switching IGBT controlling series-resonant tank; driven with 15 V/0 V square wave and 91 Ω gate resistor.

Use Value: 260–340 ns td(off) at 25°C ensures precise phase control; low Crss (12–14 pF) minimizes Miller-induced false turn-on risk.

Use Scenario: Online double-conversion UPS output stage delivering clean 230 V / 50 Hz sine wave from 700–800 V DC bus.

IC Role / Device Role / Timing Role: Output bridge switch in IGBT-based PWM inverter with active harmonic filtering and battery backup.

Use Value: NPT ruggedness supports 1000+ short-circuit events over lifetime; 2.0 K/W RthJC allows thermal management on standard 6 cm² copper pad without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP20NC120WD 1200 V / 20 A, TO-247 package, higher current rating but 0.22 mJ Eoff at 25°C - 2× higher switching loss. Targets higher-power motor drives (>5 kW); not drop-in due to larger footprint and different thermal interface. Select when system requires >5 A continuous current and can accommodate TO-247 mechanical layout and higher gate drive power.
IXYS IXGN20N120B3 1200 V / 20 A, 3rd-gen XPT IGBT, 0.18 mJ Eoff, 15 µs tSC, but requires 20 V gate drive and has 15 nC QG. Designed for high-reliability UPS and traction inverters; higher gate charge increases driver complexity and cost. Prefer when extended short-circuit margin (15 µs) and higher current headroom justify added gate drive overhead and board space.

Compared with STGP20NC120WD and IXGN20N120B3, SGD02N120BUMA1 provides optimal balance of low switching loss, compact D-PAK form factor, and proven NPT ruggedness for sub-3 kW industrial converters where thermal and layout constraints dominate selection.

Availability

SGD02N120BUMA1 is available at Aetrix Electronics and suitable for motor controls, photovoltaic inverters, and uninterruptible power supplies requiring stable component supply, JEDEC-qualified reliability, and surface-mount manufacturability.

Supply support for SGD02N120BUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and wafer fabrication facilities.

This part belongs to Infineon's TRENCHSTOP™ and CoolSiC™-complementary IGBT portfolio, designed specifically for cost-sensitive, high-efficiency industrial power conversion systems operating up to 1200 V DC bus.

FAQ

What is the maximum gate-emitter voltage rating for SGD02N120BUMA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V risks accelerated gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller coupling in high-dV/dt environments.

Can SGD02N120BUMA1 be used in parallel configurations?

Yes - its NPT structure provides positive temperature coefficient for VCE(sat) and tight parameter distribution, enabling stable current sharing. Successful parallel operation requires matched gate resistors, symmetrical PCB layout, and shared emitter inductance less than 5 nH per device.

What is the thermal resistance from junction to ambient for SGD02N120BUMA1 on a standard PCB?

With a 50 mm × 50 mm × 1.5 mm FR4 PCB and 6 cm² copper area for collector connection, RthJA is 50 K/W. This value assumes vertical mounting without forced airflow; adding a heatsink to the exposed collector tab reduces effective RthJA to ~15–20 K/W.

Does SGD02N120BUMA1 include an integrated freewheeling diode?

No - it is a discrete IGBT without monolithically integrated diode. External ultrafast recovery diodes (e.g., IDH02SG60C) must be used in inductive load applications to handle reverse recovery current and prevent voltage overshoot during turn-off.

SGD02N120BUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
6.2 A
Current - Collector Pulsed (Icm):
9.6 A
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 2A
Power - Max:
62 W
Switching Energy:
220µJ
Input Type:
Standard
Gate Charge:
11 nC
Td (on/off) @ 25°C:
23ns/260ns
Test Condition:
800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11

SGD02N120BUMA1 FAQ

1.How can I place an order for SGD02N120BUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGD02N120BUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGD02N120BUMA1 reliable?

The price and inventory of SGD02N120BUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGD02N120BUMA1 is usually 5 days.

3.What payment methods are accepted for SGD02N120BUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGD02N120BUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGD02N120BUMA1?

SGD02N120BUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGD02N120BUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGD02N120BUMA1?

For technical support, including SGD02N120BUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGD02N120BUMA1 requirements.

6.How does Aetrix verify that SGD02N120BUMA1 is sourced from the original manufacturer or authorized distributors?

All SGD02N120BUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGD02N120BUMA1 meets industry standards.

7.What is the process for return or replacement of SGD02N120BUMA1?

All SGD02N120BUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGD02N120BUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGD02N120BUMA1 part is unused and in its original packaging.

Return procedure for SGD02N120BUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SGD02N120BUMA1 Tags

  • SGD02N120BUMA1
  • SGD02N120BUMA1 PDF
  • SGD02N120BUMA1 Datasheet
  • SGD02N120BUMA1 Specifications
  • SGD02N120BUMA1 Images
  • Infineon Technologies
  • Infineon Technologies SGD02N120BUMA1
  • Buy SGD02N120BUMA1
  • SGD02N120BUMA1 Price
  • SGD02N120BUMA1 Distributor
  • SGD02N120BUMA1 Supplier
  • SGD02N120BUMA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER