onsemi SGF5N150UFTU

Overview

SGF5N150UFTU from ON Semiconductor is a 1500 V, 5 A insulated gate bipolar transistor (IGBT) in TO-3PF package, optimized for high-input-voltage off-line switching power supplies. It delivers low saturation voltage (4.7 V @ IC = 5 A), fast switching (td(off) ≤ 50 ns), and high input impedance, enabling efficient high-voltage DC-DC conversion in industrial SMPS.

For engineers reviewing the SGF5N150UFTU datasheet, pinout, applications, or equivalent options, key selection criteria include VCES rating, thermal resistance (RθJC = 2.0 °C/W), gate charge (Qg = 30–45 nC), and safe operating area under inductive switching at 600 V.

Technical Context

The SGF5N150UFTU employs a planar IGBT structure with field-stop technology to balance conduction and switching losses. Its gate threshold voltage (VGE(th) = 2.0–4.0 V) ensures robust noise immunity while supporting standard 10 V gate drive.

Designed for hard-switched, high-voltage flyback and forward converters, it operates with pulsed collector current up to 20 A and supports case temperatures from –55 °C to +150 °C. Thermal performance is characterized by RθJC = 2.0 °C/W and RθJA = 40 °C/W.

Key Specifications

Pinout & Package

SGF5N150UFTU uses the TO-3PF (Fairchild pkg code AG) metal-can package with isolated tab, rated for 300 °C lead-soldering. The case serves as the collector terminal, enabling low-inductance, high-current PCB mounting with thermal interface to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP10NC150D and IXGH5N150, the SGF5N150UFTU offers superior switching efficiency per watt at 5 A due to lower Qg and Eoff, tighter thermal resistance, and fully characterized dynamic parameters-making it optimal for compact, high-frequency, high-reliability SMPS where loss and size are constrained.

Availability

SGF5N150UFTU is available at Aetrix Electronics and suitable for industrial off-line SMPS, high-voltage DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SGF5N150UFTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The SGF5N150UFTU belongs to Fairchild's legacy high-voltage IGBT family, designed specifically for rugged, high-efficiency switching power supplies operating directly from universal AC mains or high-voltage DC buses.

FAQ

What is the maximum continuous collector current rating for SGF5N150UFTU at 100°C case temperature?

The SGF5N150UFTU has a continuous collector current rating of 5 A at TC = 100°C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal limits under sustained conduction; pulsed operation allows up to 20 A for short durations limited by junction temperature. Designers must verify heatsink sizing using RθJC = 2.0 °C/W to maintain TJ ≤ 150°C under worst-case load conditions. The SGF5N150UFTU datasheet confirms this value applies to the TO-3PF package with proper mounting.

Does SGF5N150UFTU support gate drive with 15 V instead of 10 V?

Yes, SGF5N150UFTU supports gate-emitter voltage up to ±20 V (VGES), so 15 V gate drive is within specification and improves noise immunity and saturation margin. However, VCE(sat) shows minimal improvement above 10 V (typical 4.7 V at 10 V vs. ~4.6 V at 15 V), while Qg increases slightly-so 10 V remains the recommended drive for optimal efficiency. The SGF5N150UFTU electrical characteristics confirm stable operation across VGE = 10–15 V.

Can SGF5N150UFTU replace older Fairchild SGF5N150UF in existing designs?

Yes, SGF5N150UFTU is the updated ON Semiconductor part number for the original Fairchild SGF5N150UF, with identical electrical specifications, pinout, and TO-3PF package. The "T" suffix denotes tape-and-reel packaging, and the underscore-to-dash change (UF → UFTU) aligns with ON Semiconductor's nomenclature system. No layout or schematic changes are needed when migrating from SGF5N150UF to SGF5N150UFTU.

What is the safe operating area (SOA) limitation for SGF5N150UFTU at 600 V and 25°C?

At VCE = 600 V and TC = 25°C, the SGF5N150UFTU SOA supports up to 10 A for pulse widths ≤ 100 µs with 50% duty cycle, as shown in Figure 12 of its datasheet. Beyond that, current must be reduced to limit junction temperature rise. The SOA is defined by both thermal and second-breakdown limits; designers must apply derating curves for higher case temperatures. The SGF5N150UFTU SOA data is validated for inductive switching with VGE = 20 V.

How does the thermal resistance RθJC of SGF5N150UFTU impact heatsink selection?

The SGF5N150UFTU has RθJC = 2.0 °C/W, meaning each watt dissipated raises the junction temperature 2.0 °C above the case. For example, at 25 W dissipation and TC = 80°C, TJ = 130°C-well within the 150°C limit. This low value allows compact heatsinks; designers should use thermal interface material with ≤ 0.5 °C·in²/W resistance and ensure full case contact. The SGF5N150UFTU package dimensions and mounting notes confirm mechanical compatibility with standard TO-3PF heatsink fixtures.