onsemi SGH15N60RUFDTU

Overview

SGH15N60RUFDTU from Fairchild Semiconductor is a short-circuit-rated 600 V, 15 A IGBT with integrated fast recovery diode in TO-3P package, featuring V_CE(sat) = 2.2 V @ I_C = 15 A, t_sc = 10 µs @ T_C = 100 °C, and trr = 42 ns (typ.), designed for motor control inverters and UPS systems requiring rugged switching under fault conditions.

For engineers reviewing the SGH15N60RUFDTU datasheet, pinout, applications, or equivalent options, key selection criteria include short-circuit withstand time, co-packaged FRD performance, thermal resistance (R_θJC = 0.77 °C/W), gate charge (Q_g = 42 nC typ.), and TO-3P mechanical compatibility in high-power industrial drives.

Technical Context

This IGBT employs a trench-gate field-stop structure optimized for low conduction loss and controlled switching behavior, with built-in fast recovery diode (trr = 42 ns) enabling bidirectional current handling in bridge-leg configurations. Its 10 µs short-circuit rating at 100 °C ensures reliable operation during transient overloads without external desaturation protection.

The device operates with ±20 V gate-emitter voltage tolerance and exhibits positive temperature coefficient for V_CE(sat), supporting inherently stable parallel operation. Thermal design is enabled by low R_θJC (0.77 °C/W for IGBT, 0.7 °C/W for diode) and defined lead soldering temperature (300 °C for 5 s).

Key Specifications

Pinout & Package

SGH15N60RUFDTU uses the TO-3P (also known as TO-247) package: a 3-pin, isolated-tab, through-hole power package with 19.9 mm × 15.6 mm footprint, 4.8 mm height, and center-tab thermal interface. Pin assignment is standardized across Fairchild's RUFD series.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with STGP15H60DF and IXGN15N60B2, SGH15N60RUFDTU delivers the lowest V_CE(sat) (2.2 V) and best thermal resistance (0.77 °C/W), making it optimal for thermally demanding, short-circuit-prone applications like industrial servo drives-while maintaining identical TO-3P footprint and pinout.

Availability

SGH15N60RUFDTU is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and robotics actuation systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SGH15N60RUFDTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor (now part of ON Semiconductor) is a pioneer in power semiconductor innovation, specializing in high-reliability discrete and analog components for industrial, automotive, and computing markets.

The RUFD series-including SGH15N60RUFDTU-was engineered specifically for short-circuit-tolerant inverter applications in motor control and UPS, emphasizing ruggedness, low-loss switching, and integrated diode performance.

FAQ

What is the maximum short-circuit withstand time for SGH15N60RUFDTU?

The SGH15N60RUFDTU has a confirmed short-circuit withstand time of 10 µs at T_C = 100 °C and V_GE = 15 V, as specified in the Absolute Maximum Ratings table. This value is measured under standardized test conditions (V_CC = 300 V) and defines the safe fault-clearing window before thermal runaway occurs. Engineers must implement gate drive shutdown within this interval to ensure reliability.

Does SGH15N60RUFDTU include an integrated diode, and what are its key parameters?

Yes, SGH15N60RUFDTU integrates a fast recovery diode (FRD) in the same TO-3P package. Key diode parameters include trr = 42 ns (typ.) at T_C = 25 °C, V_FM = 1.4 V (typ.) @ I_F = 15 A, and I_F = 15 A continuous @ T_C = 100 °C. The diode shares the emitter terminal with the IGBT and is rated for 160 A pulsed forward current.

What is the gate-emitter threshold voltage (V_GE(th)) range for SGH15N60RUFDTU?

The gate-emitter threshold voltage for SGH15N60RUFDTU is specified as 5.0–8.5 V at I_C = 15 mA and V_CE = V_GE, with a typical value of 6.0 V. This range ensures robust turn-on margin against noise while maintaining compatibility with standard 15 V gate drive rails used in industrial inverter gate driver ICs.

What thermal resistance values apply to SGH15N60RUFDTU, and how do they impact heatsink design?

SGH15N60RUFDTU specifies R_θJC = 0.77 °C/W for the IGBT section and R_θJC = 0.7 °C/W for the integrated diode. These low values mean that for 15 A continuous operation at 100 °C case temperature, junction temperature rise is ~11.6 °C (IGBT) and ~10.5 °C (diode) above case-enabling compact heatsink solutions with minimal thermal interface resistance.

Is SGH15N60RUFDTU pin-compatible with other TO-3P IGBTs, and what is its package variant designation?

SGH15N60RUFDTU uses the standard TO-3P (also designated TO-247) package with 3-pin, isolated-tab configuration and identical mechanical dimensions (19.9 mm × 15.6 mm × 4.8 mm) as industry-standard TO-247 devices. Pinout is Collector–Gate–Emitter (left-to-right when tab faces outward), ensuring mechanical and electrical compatibility with existing TO-247 footprints and mounting hardware.