Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SGP02N120XKSA1

Part No.:
SGP02N120XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-220-3
Datasheet:
AetrixSGP02N120XKSA1.pdf
Description:
IGBT 1200V 6.2A 62W TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,113

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SGP02N120XKSA1 from Infineon is a 1200 V, 2 A NPT (Non-Punch-Through) IGBT in PG-TO-220-3-1 package, designed for high-voltage switching in motor controls, inverters, and SMPS. It delivers 0.11 mJ turn-off energy (Eoff), 10 µs short-circuit withstand time at Tj ≤ 150°C, and VCE(sat) = 3.1 V (typ.) at IC = 2 A, Tj = 25°C.

For engineers reviewing the SGP02N120XKSA1 datasheet, SGP02N120XKSA1 pinout, SGP02N120XKSA1 application, or SGP02N120XKSA1 equivalent, key selection criteria include its NPT-based ruggedness, tight parameter distribution across temperature, parallel-switching capability, and JEDEC1 qualification for industrial motor drives and high-reliability power conversion.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology to achieve high ruggedness, temperature-stable VCE(sat) behavior (3.1 V @ 25°C → 4.3 V @ 150°C), and robust short-circuit tolerance (10 µs at VGE = 15 V). Its low Eoff (0.11 mJ) and fast switching (td(off) = 260–340 ns typ.) support high-frequency operation up to 100 kHz in hard-switched topologies.

The device features tightly controlled gate threshold voltage (VGE(th) = 3–5 V), low leakage (ICES = 25 µA @ 25°C), and stable dynamic parameters across junction temperature (−55°C to +150°C), enabling reliable performance in thermally demanding environments without derating penalties typical of PT IGBTs.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - Supports DC bus voltages up to 960 V in 3-phase inverters with 20% safety margin.
IC (DC) 2 A - Rated continuous collector current at TC = 100°C; enables compact heatsink design in low-power SMPS.
Eoff 0.11 mJ - Reduces switching losses by ~40% vs prior generation, improving efficiency at 20–50 kHz switching frequencies.
tSC 10 µs - Enables robust protection response in motor control fault handling without external desaturation circuitry.
VCE(sat) 3.1 V (typ., 25°C) / 4.3 V (max, 150°C) - Low conduction loss with minimal thermal runaway risk during overload.
RthJC 2.0 K/W - Allows direct thermal coupling to heatsink; supports 62 W power dissipation at TC = 25°C.
QG 11 nC - Enables gate drive with standard ±15 V logic-level drivers (e.g., 1EDN7512B) using <100 Ω series resistance.

Pinout & Package

SGP02N120XKSA1 is housed in PG-TO-220-3-1 package: insulated plastic case with three leads, vertical mounting, and integral heatsink tab (collector-connected). Thermal path optimized via copper leadframe and solderable backside tab.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side power terminal Connected to heatsink tab; carries full load current; requires isolation from chassis unless system ground referenced.
Gate (G) Control input High-impedance MOS-controlled terminal; requires low-inductance layout and 15 V ±10% drive for specified switching speed.
Emitter (E) Power return and reference node Serves as common source for gate drive return and current sense; must be low-inductance connection to minimize VGE noise.

Key Features

Feature Design Value
NPT technology Enables parallel operation without current imbalance due to positive temperature coefficient of VCE(sat).
JEDEC1 qualification Validated for motor control and inverter applications per industry reliability standards (HTOL, TC, HAST).
Short-circuit withstand 10 µs at VGE = 15 V allows use with standard microcontroller-based protection without dedicated desat detection IC.
Pb-free & RoHS Meets EU RoHS Directive 2011/65/EU; compatible with lead-free reflow (260°C peak, MSL3 for TO-220 variant).
Tight parameter distribution VGE(th) spread of 3–5 V and Eoff variation <±15% ensures consistent timing and loss matching in multi-device modules.

Applications

Motor Control Inverter Systems

Use Scenario: Single-phase or 3-phase BLDC/PMSM drives in HVAC blowers, pumps, and compressors rated ≤ 500 W.

IC Role / Device Role / Timing Role: High-side switch in 6-step commutation; handles 1200 V DC link with 2 A RMS phase current.

Use Value: 10 µs short-circuit rating enables firmware-based overcurrent shutdown without hardware desat detection, reducing BOM count.

Use Scenario: Auxiliary DC-AC inverter stage in solar microinverters and UPS systems operating at 800 V DC input.

IC Role / Device Role / Timing Role: Low-conduction-loss switching element in half-bridge leg; operates at 20–50 kHz with soft-switching assist.

Use Value: 0.11 mJ Eoff reduces total switching loss by 35% vs legacy 1200 V IGBTs, improving full-load efficiency by 0.8%.

SMPS Industrial Power Supplies

Use Scenario: Primary-side switch in resonant LLC and phase-shifted full-bridge converters for telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main switch; rated for 1200 V blocking with 2 A peak current.

Use Value: Stable VCE(sat) across −40°C to +150°C eliminates need for gate voltage compensation in wide-temperature designs.

Use Scenario: Output stage switch in programmable DC power supplies delivering 0–1000 V, 0–2 A with fast transient response.

IC Role / Device Role / Timing Role: Precision-regulated high-voltage switch; used with isolated gate driver and analog current sensing.

Use Value: Tight VGE(th) distribution (3–5 V) ensures consistent turn-on timing across production batches, critical for current-loop stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STGP20NC120WD 1200 V / 20 A rated; higher IC, larger die, RthJC = 1.2 K/W; Eoff = 0.28 mJ (at 20 A) Targeted at higher-current inverters (>5 A); not drop-in due to different SOA and gate charge (QG = 120 nC) Select when scaling to >5 A loads; requires stronger gate driver and revised thermal design.
IXGH20N120B3 1200 V / 20 A; trench-gate PT structure; VCE(sat) = 2.7 V (25°C); tSC = 6 µs; QG = 105 nC Better conduction loss but lower short-circuit ruggedness; unsuitable for unprotected motor control loops Prefer for high-efficiency SMPS where short-circuit exposure is mitigated by topology or external protection.

Compared with STGP20NC120WD and IXGH20N120B3, SGP02N120XKSA1 offers optimal balance of low gate charge (11 nC), proven 10 µs short-circuit robustness, and thermal stability for <2 A applications-making it ideal for cost-sensitive, space-constrained industrial power stages where reliability trumps raw current rating.

Availability

SGP02N120XKSA1 is available at Aetrix Electronics and suitable for motor controls, inverter systems, and SMPS requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for SGP02N120XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive MCUs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to Infineon's SGP-series NPT IGBT portfolio, engineered specifically for rugged, medium-power industrial switching applications where thermal stability, short-circuit resilience, and parameter consistency outweigh ultra-low conduction loss.

FAQ

What is the maximum gate-emitter voltage rating for SGP02N120XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and −5 V to −10 V for fast, noise-immune turn-off. Exceeding ±20 V-even transiently-can cause irreversible gate failure.

Can SGP02N120XKSA1 be paralleled with identical units?

Yes-its NPT structure provides a positive temperature coefficient for VCE(sat), ensuring inherent current sharing across temperature. Parallel operation requires matched gate resistors (<±5% tolerance), symmetrical PCB layout, and shared heatsinking. No external emitter resistors are needed for basic balancing.

Is an anti-parallel diode required for inductive load switching?

Yes-SGP02N120XKSA1 does not integrate a freewheeling diode. An external ultrafast or SiC Schottky diode (e.g., IDH02SG60C) must be connected in anti-parallel to handle inductive flyback current. Diode reverse recovery characteristics directly impact measured Eoff and voltage overshoot.

What is the recommended gate resistor value for 50 kHz operation?

For 50 kHz hard-switched operation with VCC = 800 V and IC = 2 A, a 91 Ω gate resistor (as used in Infineon's reference test circuit) balances switching speed and EMI. Lower values (e.g., 47 Ω) reduce td(off) but increase dV/dt stress; higher values (e.g., 150 Ω) suppress ringing but raise Eon by ~25%.

SGP02N120XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
6.2 A
Current - Collector Pulsed (Icm):
9.6 A
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 2A
Power - Max:
62 W
Switching Energy:
220µJ
Input Type:
Standard
Gate Charge:
11 nC
Td (on/off) @ 25°C:
23ns/260ns
Test Condition:
800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

SGP02N120XKSA1 FAQ

1.How can I place an order for SGP02N120XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGP02N120XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGP02N120XKSA1 reliable?

The price and inventory of SGP02N120XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGP02N120XKSA1 is usually 5 days.

3.What payment methods are accepted for SGP02N120XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGP02N120XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGP02N120XKSA1?

SGP02N120XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGP02N120XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGP02N120XKSA1?

For technical support, including SGP02N120XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGP02N120XKSA1 requirements.

6.How does Aetrix verify that SGP02N120XKSA1 is sourced from the original manufacturer or authorized distributors?

All SGP02N120XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGP02N120XKSA1 meets industry standards.

7.What is the process for return or replacement of SGP02N120XKSA1?

All SGP02N120XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGP02N120XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGP02N120XKSA1 part is unused and in its original packaging.

Return procedure for SGP02N120XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SGP02N120XKSA1 Tags

  • SGP02N120XKSA1
  • SGP02N120XKSA1 PDF
  • SGP02N120XKSA1 Datasheet
  • SGP02N120XKSA1 Specifications
  • SGP02N120XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies SGP02N120XKSA1
  • Buy SGP02N120XKSA1
  • SGP02N120XKSA1 Price
  • SGP02N120XKSA1 Distributor
  • SGP02N120XKSA1 Supplier
  • SGP02N120XKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER