Infineon Technologies SGW20N60HS

Overview

SGW20N60HS from Infineon is a 600 V, 20 A high-speed NPT IGBT optimized for >30 kHz switching in motor drives and induction heating. It delivers 240 µJ turn-off energy at 400 V/20 A, 10 µs short-circuit withstand time, and 0.7 K/W junction-to-case thermal resistance in PG-TO-247-3 package.

For engineers reviewing the SGW20N60HS datasheet, SGW20N60HS pinout, SGW20N60HS application, or SGW20N60HS equivalent, key selection criteria include E_off temperature stability, parallel-switching capability, ruggedness under repetitive short-circuit stress, and gate charge (100 nC) impact on driver sizing.

Technical Context

This IGBT uses Non-Punch-Through (NPT) technology to ensure tight parameter distribution and moderate E_off increase with temperature-critical for consistent performance across wide operating ranges. Its 150 °C maximum junction temperature and 175 °C time-limited rating support high-power density designs.

The device features low collector-emitter saturation voltage (2.8–3.15 V at 25 °C, 3.5–4.0 V at 150 °C), enabling efficient conduction in hard-switched topologies. Gate threshold voltage (3–5 V) and ±20 V static gate-emitter rating provide robust noise immunity and driver compatibility.

Key Specifications

Pinout & Package

SGW20N60HS is housed in PG-TO-247-3 package: isolated tab (collector), vertical lead layout, and industry-standard footprint compatible with manual and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Compared with STGP20NC60WD and IXGN20N60A3, SGW20N60HS offers the best balance of low E_off, stable V_CE(sat) temperature coefficient, and proven short-circuit ruggedness-making it optimal for cost-sensitive, high-reliability 30–50 kHz inverter designs where thermal management and protection simplicity are critical.

Availability

SGW20N60HS is available at Aetrix Electronics and suitable for motor drives, induction heating systems, and UPS inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified ruggedness.

Supply support for SGW20N60HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

SGW20N60HS belongs to Infineon's High Speed IGBT product line, engineered specifically for high-frequency hard-switched and resonant converter applications demanding low switching loss, robust short-circuit behavior, and parallel operation capability.

FAQ

What is the maximum gate-emitter voltage rating for SGW20N60HS?

The absolute maximum static gate-emitter voltage is ±20 V, with ±30 V allowed for transient pulses shorter than 1 µs and duty cycle under 5 %. Exceeding ±20 V continuously risks gate oxide degradation and threshold voltage shift, especially at elevated temperatures.

Does SGW20N60HS include an integrated freewheeling diode?

No, SGW20N60HS is a standalone IGBT without an integrated body diode. An external ultrafast or soft-recovery freewheeling diode-such as IDH08SG60C-must be used in anti-parallel configuration to handle inductive load current commutation and reverse recovery energy.

How does the 10 µs short-circuit withstand time translate to practical protection design?

The 10 µs rating assumes V_GE = 15 V, V_CC ≤ 600 V, and T_j ≤ 150 °C. Protection circuits must detect overcurrent and remove gate drive within ≤8 µs to maintain safety margin; typical solutions use DESAT pins on gate drivers like IRS21860 or UCC21520 with <1 µs propagation delay.

Can SGW20N60HS be paralleled with other units without emitter resistors?

Yes-its NPT structure provides a positive temperature coefficient for V_CE(sat), enabling inherently self-balancing current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting to ensure uniform thermal coupling and avoid current hogging.