Infineon Technologies SGW20N60HSFKSA1
- Part No.:
- SGW20N60HSFKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
SGW20N60HSFKSA1.pdf
- Description:
- IGBT 600V 36A 178W TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,154
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Product details
Overview
SGW20N60HSFKSA1 from Infineon is a 600 V, 20 A high-speed NPT-IGBT optimized for >30 kHz switching in industrial motor drives and UPS systems. It delivers 240 µJ turn-off energy at 400 V/20 A, 10 µs short-circuit withstand time at 15 V gate drive, and 2.8–3.15 V collector-emitter saturation voltage (Tj = 25–150 °C).
For engineers reviewing the SGW20N60HSFKSA1 datasheet, SGW20N60HSFKSA1 pinout, SGW20N60HSFKSA1 application, or SGW20N60HSFKSA1 equivalent, key selection criteria include its NPT architecture enabling parallel operation, tight parameter distribution across temperature, and validated ruggedness for hard-switched 600 V topologies.
Technical Context
This IGBT employs Non-Punch-Through (NPT) silicon technology to deliver stable dynamic performance across junction temperatures from –55 °C to 150 °C. Its moderate Eoff increase with temperature and low thermal resistance (RthJC = 0.7 K/W) support reliable high-frequency operation without derating penalties.
The device integrates a monolithic structure with tightly controlled threshold voltage (VGE(th) = 3–5 V) and transconductance (gfs = 14 S), enabling predictable gate drive design and robust short-circuit behavior up to 170 A peak under 10 µs stress at Tj ≤ 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 600 V - Supports 400 V DC bus designs with 50 % voltage margin for transient overvoltage handling. |
| IC (continuous) | 20 A @ TC = 100 °C - Enables compact heatsink sizing in forced-air-cooled inverters. |
| Eoff | 240 µJ @ 400 V/20 A - Reduces switching losses by ~30 % vs prior generation, critical for >30 kHz PWM efficiency. |
| tSC | 10 µs @ VGE = 15 V - Allows time for fault detection and shutdown in motor drive protection circuits. |
| VCE(sat) | 3.15 V max @ Tj = 150 °C - Limits conduction loss to <63 W at full load, easing thermal management. |
| RthJC | 0.7 K/W - Enables direct mounting to heatsinks with minimal thermal interface resistance impact. |
| QG | 100 nC - Defines gate driver current requirement (~6.25 A peak for 16 ns rise time with 16 Ω RG). |
Pinout & Package
SGW20N60HSFKSA1 uses the PG-TO-247-3 package: a through-hole, 3-terminal power package with isolated tab, rated for high-power dissipation and mechanical robustness in industrial environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side current path | Connected to DC bus positive; carries full load current and must be routed with low-inductance layout. |
| Gate (G) | Control input terminal | Requires low-impedance gate driver (RG = 2.2–16 Ω typical); sensitive to noise due to high dV/dt capability. |
| Emiter (E) | Reference and current return path | Serves as power ground reference for gate drive; must be low-inductance connection to minimize Miller-induced turn-on risk. |
Key Features
| Feature | Design Value |
|---|---|
| NPT technology | Enables parallel switching without external current-sharing resistors due to positive VCE(sat) temperature coefficient. |
| Short-circuit ruggedness | 10 µs withstand time at 15 V gate drive allows integration into fast-fault-response protection schemes without desaturation circuitry oversizing. |
| Tight parameter distribution | JEDEC J-STD-020 qualified with ±5 % VGE(th) and ±8 % Eoff variation ensures consistent system-level timing and loss budgeting. |
| High-temperature stability | VCE(sat) increases only 0.35 V from 25 °C to 150 °C, preserving conduction loss predictability in thermally constrained enclosures. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Three-phase inverter stage in 3–7.5 kW variable-frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: High-side switch in 600 V DC-link topology operating at 16–32 kHz PWM frequency. Use Value: 240 µJ Eoff and 10 µs tSC enable efficient, fault-tolerant operation while maintaining <150 °C junction temperature under continuous load. | Use Scenario: Online double-conversion UPS output inverter delivering clean 230 VAC with <5 % THD. IC Role / Device Role / Timing Role: Main switching element in full-bridge inverter stage with synchronous rectification control. Use Value: NPT-based parameter stability ensures consistent dead-time margin and low cross-conduction risk across ambient temperatures from 0–40 °C. |
| Solar Inverters | Induction Heating Systems |
Use Scenario: DC–AC stage in string inverters converting 600 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Hard-switched IGBT in unidirectional H-bridge configuration with active clamp snubber. Use Value: 0.7 K/W RthJC and 30 kHz+ capability reduce heatsink mass by 35 % versus legacy 10 kHz devices, lowering BOM cost. | Use Scenario: Resonant half-bridge inverter driving 20–100 kHz induction coils for metal heating in manufacturing lines. IC Role / Device Role / Timing Role: High-frequency switching element with precise timing control for zero-voltage switching (ZVS) envelope. Use Value: Low Coss (105 pF) and predictable QG (100 nC) simplify resonant tank tuning and gate driver loop compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN20N60A3 | Higher VCE(sat) (3.4 V typ.), lower Eoff (190 µJ), TO-247-3 package | Optimized for soft-switching; less tolerant of hard-switched short-circuit stress | Prefer when ZVS operation dominates and gate drive loss minimization is critical. |
| STMicroelectronics STGW20H65DFB | 650 V rating, 20 A, trench-gate field-stop IGBT, 220 µJ Eoff, higher Coss (140 pF) | Better 650 V margin but reduced high-frequency efficiency above 25 kHz due to higher capacitance | Choose for 650 V bus designs requiring extended voltage headroom and lower conduction loss at 25 °C. |
Compared with IXGN20N60A3 and STGW20H65DFB, SGW20N60HSFKSA1 offers superior short-circuit ruggedness (10 µs vs 6 µs and 8 µs) and tighter VCE(sat) distribution-critical for parallel operation in high-reliability industrial inverters.
Availability
SGW20N60HSFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems requiring stable component supply and long-term production continuity.
Supply support for SGW20N60HSFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SGW20N60HSFKSA1 belongs to Infineon's High-Speed IGBT portfolio designed specifically for high-frequency, hard-switched 600 V applications where low Eoff, parallel capability, and rugged short-circuit behavior are mandatory.
FAQ
What is the maximum recommended gate resistor value for SGW20N60HSFKSA1 in a 32 kHz motor drive?
A 16 Ω gate resistor is validated for 32 kHz operation with 20 A load and 400 V bus, yielding 222 ns turn-off delay and 0.96 mJ total switching energy at 150 °C. Lower values (e.g., 2.2 Ω) reduce switching time but increase EMI and gate driver stress; use 8–12 Ω for balanced trade-offs.
Does SGW20N60HSFKSA1 integrate an anti-parallel diode?
No. SGW20N60HSFKSA1 is a discrete IGBT without an integrated freewheeling diode. External ultrafast diodes (e.g., IDH08SG60C) must be used in complementary pairs for inductive load commutation, with matched reverse recovery characteristics to avoid shoot-through.
Can SGW20N60HSFKSA1 operate reliably at 175 °C junction temperature?
No. The absolute maximum rated junction temperature is 150 °C for continuous operation. Short-term exposure up to 175 °C is permitted for <150 hours lifetime, but thermal design must ensure steady-state Tj ≤ 150 °C per JEDEC qualification limits and reliability requirements.
Is PG-TO-247-3 mounting compatible with standard TO-247 heatsinks?
Yes. SGW20N60HSFKSA1 uses the industry-standard PG-TO-247-3 footprint with 2.54 mm lead pitch and 15.8 mm body width. Mechanical compatibility is confirmed with common extruded aluminum heatsinks using M3 screws and thermal interface materials meeting 0.1–0.3 mm thickness specifications.
SGW20N60HSFKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 36 A
- Current - Collector Pulsed (Icm):
- 80 A
- Vce(on) (Max) @ Vge, Ic:
- 3.15V @ 15V, 20A
- Power - Max:
- 178 W
- Switching Energy:
- 690µJ
- Input Type:
- Standard
- Gate Charge:
- 100 nC
- Td (on/off) @ 25°C:
- 18ns/207ns
- Test Condition:
- 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-1
SGW20N60HSFKSA1 FAQ
1.How can I place an order for SGW20N60HSFKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SGW20N60HSFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SGW20N60HSFKSA1 reliable?
The price and inventory of SGW20N60HSFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGW20N60HSFKSA1 is usually 5 days.
3.What payment methods are accepted for SGW20N60HSFKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGW20N60HSFKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SGW20N60HSFKSA1?
SGW20N60HSFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SGW20N60HSFKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SGW20N60HSFKSA1?
For technical support, including SGW20N60HSFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGW20N60HSFKSA1 requirements.
6.How does Aetrix verify that SGW20N60HSFKSA1 is sourced from the original manufacturer or authorized distributors?
All SGW20N60HSFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGW20N60HSFKSA1 meets industry standards.
7.What is the process for return or replacement of SGW20N60HSFKSA1?
All SGW20N60HSFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGW20N60HSFKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SGW20N60HSFKSA1 part is unused and in its original packaging.
Return procedure for SGW20N60HSFKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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