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Infineon Technologies SGW25N120FKSA1

Part No.:
SGW25N120FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSGW25N120FKSA1.pdf
Description:
IGBT 1200V 46A 313W TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,016

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Product details

Overview

SGW25N120 from Infineon is a 1200 V, 25 A NPT (Non-Punch-Through) IGBT optimized for high-voltage switching in motor controls, inverters, and SMPS. It delivers 2.9 mJ turn-off energy at Tj = 25°C, 10 µs short-circuit withstand time at VGE = 15 V, and 3.6–4.3 V collector-emitter saturation voltage across –40°C to +150°C junction temperature range.

For engineers reviewing the SGW25N120 datasheet, SGW25N120 pinout, SGW25N120 application, or SGW25N120 equivalent, key selection criteria include its NPT-based ruggedness, tight parameter distribution, parallel-switching capability, and JEDEC-qualified reliability for industrial power conversion systems.

Technical Context

This IGBT employs Non-Punch-Through (NPT) technology, enabling high temperature stability, uniform parameter spread, and inherent short-circuit robustness without external desaturation protection circuitry. Its 10 µs short-circuit withstand time is validated under 100–1200 V VCE, VGE = 15 V, and Tj ≤ 150°C conditions.

The device features low gate charge (225–300 nC), low output capacitance (160–190 pF), and tightly controlled transconductance (20 S typical), supporting efficient gate drive design and predictable switching behavior across wide temperature and current ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 1200 V - Supports DC bus voltages up to 1200 V in industrial inverters and HV SMPS.
IC (continuous) 25 A at TC = 100°C - Rated for sustained conduction in motor drives with forced-air cooling.
Eoff 2.9 mJ at Tj = 25°C - Enables high-efficiency operation at 8–20 kHz switching frequencies in induction heating and UPS.
tSC 10 µs - Allows time for fault detection and shutdown in overcurrent events without destructive failure.
VCE(sat) 3.6–4.3 V at IC = 25 A, Tj = 150°C - Low conduction loss improves thermal margin and reduces heatsink requirements.
RthJC 0.4 K/W - Enables high-power density layout with direct case-to-heatsink mounting in TO-247 packages.
QGate 225–300 nC - Determines gate driver peak current requirement (~10–15 A for 22 Ω RG).

Pinout & Package

SGW25N120 is housed in a PG-TO-247-3 package - a through-hole, single-ended, three-terminal power semiconductor package with isolated metal tab for direct heatsink mounting and low-inductance emitter connection.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side current path Connected to DC bus positive; handles full load current and voltage stress during blocking.
Gate (G) Control input Receives ±20 V logic-level drive; requires <100 nA leakage current compliance and 225–300 nC total charge.
Emitter (E) Reference and current return Serves as power ground reference; internal 13 nH emitter inductance impacts switching overshoot and diode recovery interaction.

Key Features

Feature Design Value
NPT process technology Delivers stable VCE(sat) and Eoff across –40°C to +150°C, enabling reliable operation without derating in harsh environments.
JEDEC-qualified reliability Validated per J-STD-020 and JESD-022 for target applications - ensures long-term stability in industrial motor control deployments.
Parallel switching capability Tight parameter distribution (e.g., VGE(th) = 3–5 V, VCE(sat) variation <0.7 V) enables direct paralleling without current-sharing resistors.
Pb-free & RoHS-compliant plating Meets global environmental regulations and supports lead-free reflow soldering up to 260°C for 10 s at 1.6 mm from case.

Applications

Industrial Motor Drives Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 5–15 kW variable-frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-voltage, medium-current switching element in the upper-leg IGBT position of each phase leg.

Use Value: 10 µs short-circuit withstand time allows safe operation during transient overloads without immediate desaturation shutdown.

Use Scenario: DC-AC inverter stage in online double-conversion UPS systems delivering clean sine-wave output.

IC Role / Device Role / Timing Role: Main power switch in H-bridge topology handling 1200 V DC bus and 25 A RMS output current.

Use Value: Low Eoff (2.9 mJ) and stable VCE(sat) reduce conduction and switching losses, improving system efficiency above 94%.

Solar Inverters Induction Heating Systems

Use Scenario: DC-link switching in string inverters converting photovoltaic array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-voltage IGBT in boost converter and inverter stages operating at 16–20 kHz PWM frequency.

Use Value: Tight parameter distribution ensures consistent channel balancing across multi-string designs, minimizing thermal mismatch.

Use Scenario: Resonant half-bridge inverter driving 20–50 kHz tank circuits for metal melting and hardening.

IC Role / Device Role / Timing Role: Fast-switching, high-ruggedness switch managing repetitive 100–240 A peak currents with 1200 V blocking.

Use Value: 40% lower Eoff vs. prior generation reduces thermal stress during high-duty-cycle operation, extending lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXYS IXGN25N120B3 1200 V/25 A, but uses PT (Punch-Through) structure; higher Eoff (3.8 mJ), shorter tSC (6 µs), higher VCE(sat) (4.5 V typ.) Limited to lower-reliability SMPS; not recommended for motor drives requiring >8 µs fault clearance. Acceptable where cost sensitivity outweighs ruggedness needs and thermal margin is ample.
STMicroelectronics STGW25H120DF 1200 V/25 A trench-gate field-stop IGBT; lower VCE(sat) (2.8 V), but only 6 µs tSC; no JEDEC qualification for industrial use. Suitable for consumer-grade inverters; lacks validation for continuous industrial deployment per J-STD-020. Preferable when conduction loss dominates design, but requires additional fault-protection circuitry.

Compared with IXGN25N120B3 and STGW25H120DF, SGW25N120 provides superior short-circuit ruggedness and JEDEC-qualified reliability-critical for unattended industrial motor drives-while maintaining competitive switching and conduction performance.

Availability

SGW25N120 is available at Aetrix Electronics and suitable for industrial motor controls, solar inverters, and uninterruptible power supplies requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for SGW25N120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in industrial, automotive, and renewable energy markets.

SGW25N120 belongs to Infineon's TRENCHSTOP™ Fast IGBT product line, engineered specifically for high-efficiency, high-reliability switching in 1–20 kW industrial power converters.

FAQ

What is the maximum allowable gate-emitter voltage for SGW25N120?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller coupling during fast dV/dt transitions.

Can SGW25N120 be used in parallel configurations?

Yes-its NPT structure ensures tight VGE(th) (3–5 V) and VCE(sat) distribution, enabling stable current sharing without emitter resistors. Layout symmetry and matched gate drive impedance are required to maintain balance under dynamic load conditions.

Does SGW25N120 include an integrated anti-parallel diode?

No-SGW25N120 is a discrete IGBT die in a 3-pin TO-247 package with no monolithically integrated freewheeling diode. An external ultrafast soft-recovery diode (e.g., IDH12EG120, 1200 V/30 A) must be used in antiparallel configuration for inductive load commutation.

What thermal interface material is recommended for SGW25N120 mounting?

A thermally conductive, electrically insulating pad or grease rated for ≥1.5 W/m·K and compatible with 260°C soldering is recommended. Infineon specifies 0.4 K/W RthJC, so interface resistance must remain <0.1 K/W to avoid exceeding 150°C junction temperature at 313 W Ptot.

SGW25N120FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
46 A
Current - Collector Pulsed (Icm):
84 A
Vce(on) (Max) @ Vge, Ic:
3.6V @ 15V, 25A
Power - Max:
313 W
Switching Energy:
3.7mJ
Input Type:
Standard
Gate Charge:
225 nC
Td (on/off) @ 25°C:
45ns/730ns
Test Condition:
800V, 25A, 22Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SGW25N120FKSA1 FAQ

1.How can I place an order for SGW25N120FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGW25N120FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGW25N120FKSA1 reliable?

The price and inventory of SGW25N120FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGW25N120FKSA1 is usually 5 days.

3.What payment methods are accepted for SGW25N120FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGW25N120FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGW25N120FKSA1?

SGW25N120FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGW25N120FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGW25N120FKSA1?

For technical support, including SGW25N120FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGW25N120FKSA1 requirements.

6.How does Aetrix verify that SGW25N120FKSA1 is sourced from the original manufacturer or authorized distributors?

All SGW25N120FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGW25N120FKSA1 meets industry standards.

7.What is the process for return or replacement of SGW25N120FKSA1?

All SGW25N120FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGW25N120FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGW25N120FKSA1 part is unused and in its original packaging.

Return procedure for SGW25N120FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SGW25N120FKSA1 Tags

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