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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SGW30N60FKSA1

Name: SGW30N60FKSA1
Brand: Infineon Technologies
SKU: SGW30N60FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SGW30N60FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: SGW30N60FKSA1.pdf

Description:: IGBT NPT 600V 41A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,399

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Product details

Overview

SGW30N60FKSA1 from Infineon is a 600 V, 30 A NPT (Non-Punch-Through) IGBT in PG-TO-247-3 package, optimized for motor control and inverter applications. It delivers 2.5 V V_CE(sat) at 30 A and 150 °C, 10 µs short-circuit withstand time at V_GE = 15 V, and 70% lower E_off versus prior generation. Its tight parameter distribution and parallel-switching capability support high-reliability industrial drives.

For engineers reviewing the SGW30N60FKSA1 datasheet, SGW30N60FKSA1 pinout, SGW30N60FKSA1 application, or SGW30N60FKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit ruggedness, gate charge (140–182 nC), thermal resistance (R_thJC = 0.5 K/W), and NPT-based safe operating area up to 600 V.

Technical Context

This IGBT uses Non-Punch-Through (NPT) silicon technology, enabling high ruggedness, temperature-stable V_CE(sat), and robust short-circuit behavior without desaturation detection circuitry. Its 10 µs short-circuit withstand time is validated at V_CC ≤ 600 V and T_j ≤ 150 °C with V_GE = 15 V.

The device features low tail current due to NPT structure, reducing turn-off energy (E_off = 0.65–0.85 mJ at 25 °C), and exhibits stable transconductance (g_fs ≈ 20 S) across junction temperature. Input capacitance (C_iss = 1600–1920 pF) and reverse transfer capacitance (C_rss = 92–110 pF) are specified at 1 MHz and V_CE = 25 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage for 600 V DC bus inverters
I_C (T_C = 100 °C)	30 A - Continuous collector current rating at practical heatsink temperature
V_CE(sat) (I_C = 30 A, T_j = 150 °C)	2.5 V - Low conduction loss enabling <1.5 W conduction loss at full load
t_SC	10 µs - Short-circuit withstand time supports fault handling without immediate desat protection
Q_Gate	140–182 nC - Gate charge determines driver strength requirement (e.g., ≥2 A peak for 11 Ω R_G)
R_thJC	0.5 K/W - Enables efficient thermal coupling to heatsink; 125 W power dissipation at ΔT = 62.5 K
E_off (T_j = 25 °C)	0.65–0.85 mJ - 75% lower than previous generation, reducing switching loss in 10–20 kHz motor drives

Pinout & Package

SGW30N60FKSA1 is housed in PG-TO-247-3 plastic package with isolated mounting flange, rated for 260 °C wave soldering (10 s). The package provides low-inductance emitter connection and mechanical robustness for high-power industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus positive; carries full motor phase current; electrically tied to metal tab
Gate (G)	Control input	Receives 15 V logic-level drive; requires low-impedance path (<11 Ω) to minimize switching time variation
Emitter (E)	Power return and reference node	Serves as current sense reference and low-side switch return; layout must minimize stray inductance (<13 nH typical)

Key Features

Feature	Design Value
NPT technology	Delivers tight V_CE(sat) distribution (±0.3 V) and stable SOA across temperature, enabling reliable parallel operation
Short-circuit ruggedness	10 µs withstand time at 600 V and 150 °C allows use in drives without active desat detection circuitry
Low E_off	0.65–0.85 mJ at 25 °C reduces total switching loss by >30% vs legacy 600 V IGBTs in 16 kHz PWM inverters
Pb-free & RoHS	Meets JEDEC J-STD-020 moisture sensitivity level 1 and JESD-022 reliability standards for industrial lifetime

Applications

Industrial Motor Drives

Photovoltaic Inverters

Use Scenario: Three-phase 3–7.5 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; operates at 8–16 kHz with 15 V gate drive.

Use Value: 2.5 V V_CE(sat) at 150 °C enables <1.2 °C/W heatsink requirement for continuous 30 A output.

Use Scenario: String-level DC/AC conversion in residential solar inverters with 600 V DC input.

IC Role / Device Role / Timing Role: High-side switch in H-bridge topology; handles bidirectional reactive power flow.

Use Value: 10 µs short-circuit tolerance supports grid-fault ride-through without hardware desat shutdown.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Online double-conversion UPS with 400 V DC link and 50/60 Hz output.

IC Role / Device Role / Timing Role: Inverter-stage IGBT; switched at 4–8 kHz with sinusoidal PWM modulation.

Use Value: Low C_rss (92–110 pF) minimizes Miller-induced false turn-on during high dv/dt commutation.

Use Scenario: 20–50 kW resonant induction cooktops and industrial heating generators.

IC Role / Device Role / Timing Role: Half-bridge switch in series-resonant topology; operated at 20–80 kHz with zero-voltage switching.

Use Value: Tight g_fs tolerance (20 S typ.) ensures matched current sharing between paralleled devices in multi-kW modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP30NC60WD	600 V, 30 A, V_CE(sat) = 2.2 V @ 25 °C but rises to 3.1 V @ 150 °C; t_SC = 6 µs	Limited to lower ambient temperature designs due to higher V_CE(sat) drift and shorter short-circuit margin	Prefer when cost sensitivity outweighs thermal margin requirements in forced-air-cooled systems
IXYS IXGN30N60B3	600 V, 30 A, V_CE(sat) = 2.4 V @ 150 °C; t_SC = 8 µs; Q_Gate = 125 nC	Lower gate charge reduces driver loss but reduced short-circuit immunity limits fault-handling headroom	Select for space-constrained designs where gate drive efficiency is prioritized over worst-case fault robustness

Compared with STGP30NC60WD and IXGN30N60B3, SGW30N60FKSA1 offers superior thermal stability of V_CE(sat), longer short-circuit withstand time, and tighter parameter spread-critical for paralleled operation and high-temperature industrial environments.

Availability

SGW30N60FKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and JEDEC-qualified ruggedness.

Supply support for SGW30N60FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SGW30N60FKSA1 belongs to Infineon's TRENCHSTOP™ Fast IGBT product line, engineered specifically for high-efficiency, high-ruggedness 600 V inverter applications including motor control, solar, and UPS systems.

FAQ

What is the maximum allowable gate-emitter voltage for SGW30N60FKSA1?

The absolute maximum gate-emitter voltage is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause irreversible damage. Gate drive circuits must include clamping to ensure compliance under transient conditions.

Does SGW30N60FKSA1 include an integrated anti-parallel diode?

No, SGW30N60FKSA1 is a standalone IGBT die in a 3-pin TO-247 package with no monolithically integrated freewheeling diode. External ultrafast diodes (e.g., IDH08SG60C) must be used in inverter legs to handle reactive current and reverse recovery energy.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases linearly with junction temperature: from 1.7 V at 25 °C to 2.5 V at 150 °C (typical). This positive temperature coefficient enables inherent current sharing in paralleled configurations and improves thermal stability during overload conditions.

Can SGW30N60FKSA1 be used in parallel configurations?

Yes-its NPT structure, tight V_CE(sat) distribution (±5%), and positive temperature coefficient make it suitable for paralleling. Successful implementation requires matched gate resistors, symmetrical PCB layout, and common-source emitter inductance <5 nH per device to avoid dynamic current imbalance.

SGW30N60FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 41 A

Current - Collector Pulsed (Icm):: 112 A

Vce(on) (Max) @ Vge, Ic:: 2.4V @ 15V, 30A

Power - Max:: 250 W

Switching Energy:: 1.29mJ

Input Type:: Standard

Gate Charge:: 140 nC

Td (on/off) @ 25°C:: 44ns/291ns

Test Condition:: 400V, 30A, 11Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SGW30N60FKSA1 FAQ

1.How can I place an order for SGW30N60FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGW30N60FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGW30N60FKSA1 reliable?

The price and inventory of SGW30N60FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGW30N60FKSA1 is usually 5 days.

3.What payment methods are accepted for SGW30N60FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGW30N60FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGW30N60FKSA1?

SGW30N60FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGW30N60FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGW30N60FKSA1?

For technical support, including SGW30N60FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGW30N60FKSA1 requirements.

6.How does Aetrix verify that SGW30N60FKSA1 is sourced from the original manufacturer or authorized distributors?

All SGW30N60FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGW30N60FKSA1 meets industry standards.

7.What is the process for return or replacement of SGW30N60FKSA1?

All SGW30N60FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGW30N60FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGW30N60FKSA1 part is unused and in its original packaging.

Return procedure for SGW30N60FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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