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Infineon Technologies SGW30N60HSFKSA1

Part No.:
SGW30N60HSFKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSGW30N60HSFKSA1.pdf
Description:
IGBT 600V 41A 250W TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,008

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Product details

Overview

SGW30N60HSFKSA1 from Infineon is a 600 V, 30 A high-speed NPT-IGBT optimized for >30 kHz switching in industrial motor drives and UPS inverters. It delivers 480 µJ turn-off energy at 150 °C, 10 µs short-circuit withstand time, and 0.5 K/W junction-to-case thermal resistance in PG-TO-247-3 package.

For engineers reviewing the SGW30N60HSFKSA1 datasheet, SGW30N60HSFKSA1 pinout, SGW30N60HSFKSA1 application, or SGW30N60HSFKSA1 equivalent, key selection criteria include its NPT-based temperature-stable VCE(sat) (3.15–4.00 V), low Eoff drift with temperature, parallel-switching capability, and JEDEC-qualified ruggedness for high-reliability 600 V systems.

Technical Context

This IGBT employs Non-Punch-Through (NPT) silicon technology to achieve tight parameter distribution and moderate Eoff increase over temperature-critical for multi-device paralleling in high-power converters. Its gate threshold voltage (3–5 V) and transconductance (20 S typ.) support robust drive margin under varying junction temperatures.

The device features integrated emitter inductance of 13 nH (measured 5 mm from case), optimized dynamic characteristics (td(off) = 122 ns typ. at 150 °C), and a defined safe operating area up to 112 A pulsed with VCE ≤ 600 V and Tj ≤ 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VCE600 V - supports DC bus voltages up to 400 V nominal with 50% safety margin in three-phase rectified systems
IC (TC = 100 °C)30 A - continuous conduction rating enabling 2.5 kW motor drive output with standard heatsinking
Eoff480 µJ - measured at 400 V, 30 A, 150 °C; enables efficient high-frequency operation above 30 kHz
tSC10 µs - short-circuit withstand time at VGE = 15 V, allowing time for protection circuit activation
RthJC0.5 K/W - low thermal resistance enables compact thermal design and stable junction temperature control
VCE(sat) (150 °C)3.15–4.00 V - tightly distributed saturation voltage ensures balanced current sharing in parallel configurations
Ciss/Coss/Crss1500 / 150 / 92 pF - low reverse transfer capacitance reduces Miller-induced turn-on risk in hard-switched topologies

Pinout & Package

SGW30N60HSFKSA1 is housed in PG-TO-247-3 package: isolated metal tab (collector), vertical mounting, 3-pin through-hole configuration with 2.54 mm lead pitch and RoHS-compliant Pb-free plating.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Tab)Collector (C)Electrically connected to metal tab; requires insulated mounting and direct thermal path to heatsink
Pin 2Emitter (E)Low-inductance emitter return; internal 13 nH inductance impacts gate loop stability and switching loss accuracy
Pin 3Gate (G)Control terminal with ±20 V static/±30 V transient rating; gate charge QG = 141 nC dictates driver strength requirement

Key Features

FeatureDesign Value
NPT technologyEnables stable VCE(sat) and Eoff across –55 to +150 °C, supporting wide ambient and overload conditions
Parallel switching capabilityResult of tight parameter distribution and positive temperature coefficient of VCE(sat), eliminating external current-sharing resistors
10 µs short-circuit ruggednessValidated per JEDEC JESD47; allows use without active desaturation detection in cost-sensitive designs
High ruggednessRated for single-pulse avalanche energy EAS = 165 mJ (IC = 20 A, VCC = 50 V), enhancing fault tolerance in inductive loads

Applications

Industrial Motor DrivesUninterruptible Power Supplies

Use Scenario: Three-phase inverter stage in 2–5 kW variable-frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; switches at 16–32 kHz with sinusoidal PWM.

Use Value: Low Eoff and stable VCE(sat) reduce conduction and switching losses by ~12% vs. prior-generation IGBTs at 100 °C case temperature.

Use Scenario: Inverter output stage in online double-conversion UPS delivering clean 50/60 Hz sine wave to critical IT loads.

IC Role / Device Role / Timing Role: High-side switch in full-bridge topology; operates in hard-switched mode with zero-voltage switching assistance.

Use Value: 10 µs short-circuit withstand time enables reliable operation during battery-mode transitions without added crowbar circuitry.

Solar InvertersInduction Heating Systems

Use Scenario: DC–AC stage in string inverters converting PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Switching element in H-bridge; modulated at 16–20 kHz to minimize audible noise and filter size.

Use Value: NPT architecture provides predictable Eoff rise with temperature, simplifying thermal derating calculations across 45–65 °C ambient ranges.

Use Scenario: Half-bridge resonant inverter driving 20–100 kHz induction coils for metal heating in industrial furnaces.

IC Role / Device Role / Timing Role: High-frequency switching device in ZVS-capable topology; handles repetitive 100–300 A peak currents.

Use Value: 0.5 K/W RthJC and 250 W Ptot rating allow sustained 30 A RMS operation with minimal heatsink volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 600 V IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS IXGN30N60B3Higher VCE(sat) (3.4–4.2 V @ 150 °C); lower Eoff (420 µJ); TO-247-3 packageBetter efficiency at light load; less tolerant of paralleling due to wider VCE(sat) spreadSelect when minimizing total switching loss dominates over current-sharing precision
STMicroelectronics STGP30H60DFField-stop IGBT; higher Crss (120 pF); 8 µs tSC; same packageLower gate drive immunity; reduced short-circuit margin limits use in unmonitored systemsSelect only where cost sensitivity outweighs need for JEDEC-qualified ruggedness and parallel operation

Compared with IXGN30N60B3 and STGP30H60DF, SGW30N60HSFKSA1 offers superior parameter uniformity and short-circuit robustness-making it preferred for multi-module inverters requiring field-replaceable consistency and long-term reliability without active current balancing.

Availability

SGW30N60HSFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar inverters, and induction heating systems requiring stable component supply, JEDEC-qualified ruggedness, and consistent high-frequency switching performance.

Supply support for SGW30N60HSFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's High-Speed IGBT portfolio designed specifically for >30 kHz switching in industrial inverters, UPS, and renewable energy systems where efficiency, ruggedness, and thermal stability are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 30 kHz?

A 11 Ω gate resistor is validated in the datasheet for 30 A, 400 V, 30 kHz operation with 150 °C junction temperature. Using RG > 15 Ω increases td(off) beyond 150 ns and raises Eoff by >18%, risking thermal runaway in continuous duty. For 30 kHz, RG = 8–11 Ω balances loss and EMI.

Can SGW30N60HSFKSA1 be used without a freewheeling diode in inductive loads?

No. This IGBT does not integrate an anti-parallel diode. External ultrafast diodes (e.g., IDP30E60, 30 A, 600 V, trr < 60 ns) must be used in antiparallel configuration to handle inductive flyback current and prevent destructive voltage overshoot during turn-off.

Is the PG-TO-247-3 package electrically isolated?

No. The metal tab is internally connected to the collector terminal. Electrical isolation requires insulating thermal interface material (e.g., ceramic washer or silicone pad) and isolated mounting hardware. Creepage/clearance distances must meet IEC 61800-5-1 for 600 V systems.

How does junction temperature affect short-circuit capability?

Short-circuit withstand time decreases linearly with rising Tj: from 10 µs at 25 °C to ~7 µs at 150 °C. The datasheet specifies tSC = 10 µs only at Tj ≤ 150 °C and VGE = 15 V. Exceeding 150 °C junction temperature invalidates the rated tSC and risks latch-up.

SGW30N60HSFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
41 A
Current - Collector Pulsed (Icm):
112 A
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 30A
Power - Max:
250 W
Switching Energy:
1.15mJ
Input Type:
Standard
Gate Charge:
141 nC
Td (on/off) @ 25°C:
20ns/250ns
Test Condition:
400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SGW30N60HSFKSA1 FAQ

1.How can I place an order for SGW30N60HSFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGW30N60HSFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGW30N60HSFKSA1 reliable?

The price and inventory of SGW30N60HSFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGW30N60HSFKSA1 is usually 5 days.

3.What payment methods are accepted for SGW30N60HSFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGW30N60HSFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGW30N60HSFKSA1?

SGW30N60HSFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGW30N60HSFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGW30N60HSFKSA1?

For technical support, including SGW30N60HSFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGW30N60HSFKSA1 requirements.

6.How does Aetrix verify that SGW30N60HSFKSA1 is sourced from the original manufacturer or authorized distributors?

All SGW30N60HSFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGW30N60HSFKSA1 meets industry standards.

7.What is the process for return or replacement of SGW30N60HSFKSA1?

All SGW30N60HSFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGW30N60HSFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGW30N60HSFKSA1 part is unused and in its original packaging.

Return procedure for SGW30N60HSFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SGW30N60HSFKSA1 Tags

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