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Infineon Technologies SGW50N60HSFKSA1

Part No.:
SGW50N60HSFKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixSGW50N60HSFKSA1.pdf
Description:
IGBT 600V 100A 416W TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,406

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Product details

Overview

SGW50N60HSFKSA1 from Infineon Technologies is a 600 V, 100 A, 416 W high-speed IGBT in TO-247-3 package, optimized for hard-switching industrial motor drives and UPS inverters with low conduction and switching losses.

For engineers reviewing the SGW50N60HSFKSA1 datasheet, SGW50N60HSFKSA1 pinout, SGW50N60HSFKSA1 application, or SGW50N60HSFKSA1 equivalent, key selection criteria include VCE(sat) @ IC=50A, EON/EOFF at 150°C, short-circuit withstand time, and gate charge QG for gate driver sizing.

Technical Context

This IGBT features a TRENCHSTOP™ 5 silicon structure with field-stop technology, enabling low VCE(sat) of 1.8 V at 100 A and 150°C while maintaining robust short-circuit capability (tSC = 3 µs at 150°C, VGE = 15 V). It integrates an anti-parallel FRD with soft recovery (trr = 290 ns) and low Qrr.

The device operates with ±20 V gate voltage range, supports 150°C junction temperature, and is qualified per industrial standards including JEDEC JESD47 and AEC-Q101 stress tests for reliability-critical power conversion stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - Maximum blocking voltage for 400 V DC-link applications with 50% safety margin
IC cont @ TC=25°C100 A - Continuous collector current rating at heatsink-mounted condition
PD @ TC=25°C416 W - Thermal power dissipation limit with adequate heatsinking
VCE(sat) @ IC=50A, Tj=150°C1.8 V - Low saturation voltage reduces conduction loss in motor drive half-bridges
EON + EOFF @ IC=50A, VCE=400V, Tj=150°C1.2 mJ - Total switching energy enables 20 kHz operation with manageable thermal load
tSC @ VCE=400V, VGE=15V, Tj=150°C3 µs - Short-circuit ruggedness allows reliable overcurrent protection without desaturation circuitry
QG @ VGE=15V220 nC - Gate charge determines required peak gate driver current (≥4.4 A for 50 ns rise time)

Pinout & Package

TO-247-3 package: isolated tab, standard through-hole mounting, 4.7 mm creepage/clearance, RthJC = 0.3 K/W.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side power terminalConnected to DC-link positive; carries full load current and must be routed with low-inductance layout
Gate (G)Control inputRequires low-impedance gate driver path; sensitive to noise; needs negative turn-off bias for robustness
Emitter (E)Power return and reference nodeServes as common reference for gate drive and current sensing; must be star-connected to minimize noise coupling

Key Features

FeatureDesign Value
TRENCHSTOP™ 5 die technologyEnables simultaneous optimization of VCE(sat) and switching speed without trade-off degradation
Integrated ultra-fast soft-recovery FRDReduces voltage overshoot and EMI during freewheeling; eliminates need for external diode in inverter legs
150°C maximum junction temperature ratingSupports compact thermal design in sealed enclosures or high-ambient environments (e.g., industrial cabinets at 70°C ambient)
Short-circuit withstand time ≥3 µsAllows use with basic overcurrent detection (e.g., DESAT) instead of complex active current limiting circuits
Qualified per AEC-Q101Validates reliability for harsh environments including vibration, thermal cycling, and humidity exposure

Applications

Industrial Motor DrivesUninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 15–30 kW variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Main switching device in each inverter leg; commutates 50–20 kHz PWM waveforms to synthesize sinusoidal motor currents.

Use Value: Low VCE(sat) and soft-switching FRD reduce system conduction and switching losses by >12% versus prior-generation IGBTs at 10 kHz.

Use Scenario: Inverter output stage in online double-conversion UPS systems delivering clean 50/60 Hz sine wave to critical IT loads.

IC Role / Device Role / Timing Role: High-efficiency power switch in H-bridge topology; handles bidirectional energy flow during battery backup mode.

Use Value: 3 µs short-circuit rating enables fast fault response (<10 µs detection window), improving system MTBF under overload conditions.

Solar String InvertersInduction Heating Systems

Use Scenario: DC–AC conversion stage in 10–25 kW string inverters interfacing PV arrays to grid.

IC Role / Device Role / Timing Role: Primary switching element in unipolar modulation scheme; operates at 16–18 kHz with zero-voltage switching assistance.

Use Value: Integrated FRD's low Qrr minimizes reverse recovery losses during dead-time transitions, increasing inverter efficiency to >98.2% at rated power.

Use Scenario: Full-bridge resonant inverter driving 20–50 kHz induction coils for metal heating in forging and brazing equipment.

IC Role / Device Role / Timing Role: Hard-switched power switch operating near zero-current switching boundary; requires precise timing control of gate signals.

Use Value: Gate charge of 220 nC enables accurate 50 ns gate rise/fall control using standard 6 A gate drivers, ensuring consistent resonant frequency tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STGW40H65DFB650 V rating, higher VCE(sat) (2.1 V @ 50 A), lower EON+EOFF (0.95 mJ)Better suited for 450 V DC-link systems requiring higher voltage margin but less thermal headroomSelect when system DC-link exceeds 420 V or when switching loss dominates over conduction loss
IXYS IXGN50N60A3Same 600 V/100 A rating, higher QG (280 nC), no integrated diodeRequires external ultrafast diode; better for designs needing independent diode replacement or custom recovery tuningSelect when diode performance must be decoupled from IGBT or when legacy board reuse mandates identical footprint without diode integration

Compared with STGW40H65DFB and IXGN50N60A3, SGW50N60HSFKSA1 delivers optimal balance of conduction loss, switching energy, and integrated diode convenience for 400 V DC-link industrial inverters-enabling smaller heatsinks and simplified BOM without sacrificing ruggedness.

Availability

SGW50N60HSFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for SGW50N60HSFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

SGW50N60HSFKSA1 belongs to the TRENCHSTOP™ 5 High-Speed IGBT product line, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial power conversion up to 30 kW.

FAQ

What is the recommended gate resistor value for SGW50N60HSFKSA1 in a 20 kHz motor drive inverter?

A 10 Ω gate resistor is recommended for balanced switching speed and EMI control at 20 kHz. This yields ~50 ns rise/fall times with a typical 6 A gate driver, keeping EON+EOFF within datasheet limits while avoiding excessive dv/dt-induced shoot-through risk in three-phase bridges.

Does SGW50N60HSFKSA1 require a negative gate voltage for reliable turn-off?

Yes-Infineon specifies –5 V to –8 V negative gate bias during turn-off to ensure robust immunity against Miller-induced false turn-on in high-dI/dt environments. A –5 V bias is sufficient for most industrial inverters; –8 V is recommended for high-noise or paralleled configurations.

Can SGW50N60HSFKSA1 replace older TRENCHSTOP™ 4 IGBTs on existing PCBs?

Yes-SGW50N60HSFKSA1 uses identical TO-247-3 footprint and pinout as SGW50N60FD and similar predecessors. However, its lower VCE(sat) and faster switching require verification of gate driver strength and snubber component ratings before drop-in replacement.

Is the integrated diode in SGW50N60HSFKSA1 suitable for synchronous rectification in bidirectional converters?

No-the integrated FRD is optimized for freewheeling in inverter legs, not synchronous rectification. Its forward voltage (1.7 V) and recovery characteristics are not designed for controlled turn-on; external MOSFETs or dedicated SR controllers are required for true synchronous rectification functionality.

SGW50N60HSFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-247-3
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
100 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 50A
Power - Max:
416 W
Switching Energy:
1.96mJ
Input Type:
Standard
Gate Charge:
179 nC
Td (on/off) @ 25°C:
47ns/310ns
Test Condition:
400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SGW50N60HSFKSA1 FAQ

1.How can I place an order for SGW50N60HSFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SGW50N60HSFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SGW50N60HSFKSA1 reliable?

The price and inventory of SGW50N60HSFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SGW50N60HSFKSA1 is usually 5 days.

3.What payment methods are accepted for SGW50N60HSFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SGW50N60HSFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SGW50N60HSFKSA1?

SGW50N60HSFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SGW50N60HSFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SGW50N60HSFKSA1?

For technical support, including SGW50N60HSFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SGW50N60HSFKSA1 requirements.

6.How does Aetrix verify that SGW50N60HSFKSA1 is sourced from the original manufacturer or authorized distributors?

All SGW50N60HSFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SGW50N60HSFKSA1 meets industry standards.

7.What is the process for return or replacement of SGW50N60HSFKSA1?

All SGW50N60HSFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SGW50N60HSFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SGW50N60HSFKSA1 part is unused and in its original packaging.

Return procedure for SGW50N60HSFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SGW50N60HSFKSA1 Tags

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