Infineon Technologies SIGC04T60EX1SA2

Overview

SIGC04T60EX1SA2 from Infineon Technologies is a 600 V, 6 A trench-and-field-stop IGBT bare die optimized for industrial power control in discrete and module implementations. It features 1.5 V typical V_CE(sat), 6 µs short-circuit withstand time at 150 °C, and positive temperature coefficient for stable parallel operation. Used in motor drives and resonant converters where low conduction loss and controlled switching tail current are critical.

For engineers reviewing the SIGC04T60EX1SA2 datasheet, SIGC04T60EX1SA2 pinout, SIGC04T60EX1SA2 application, or SIGC04T60EX1SA2 equivalent, key selection criteria include V_CE(sat) consistency across temperature, RBSOA boundary at 600 V/12 A, gate threshold voltage (5.0–6.5 V), and die-level thermal resistance constraints in module assembly.

Technical Context

This IGBT3-generation bare die employs trench-gate and field-stop architecture to simultaneously reduce V_CE(sat) and turn-off losses while maintaining short tail current and robust short-circuit ruggedness. Its 1.98 mm × 1.96 mm silicon die uses AlSiCu frontside metallization and Ni/Ag backside metallization for reliable thermal and electrical interface bonding.

The device exhibits a positive V_CE(sat) temperature coefficient above 25 °C-enabling inherently stable current sharing in paralleled configurations-and is characterized for 6 µs short-circuit capability under V_GE = 15 V, V_CC = 360 V, and T_vj = 150 °C conditions.

Key Specifications

Pinout & Package

SIGC04T60EX1SA2 is supplied as a bare die in sawn-on-foil format with no leadframe or molded package. Die dimensions are 1.98 mm × 1.96 mm; total silicon area is 3.88 mm². Backside metallization is Ni/Ag for solder or sinter bonding; frontside features AlSiCu emitter and gate pads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Compared with IKB15N60T and FGH40T60UFD, SIGC04T60EX1SA2 offers optimal balance of die size, V_CE(sat), and short-circuit ruggedness for compact industrial modules requiring precise thermal management and paralleling capability-not raw current rating or drop-in replacement.

Availability

SIGC04T60EX1SA2 is available at Aetrix Electronics and suitable for industrial motor drives, white goods inverters, and resonant converter designs requiring stable component supply, wafer-level traceability, and consistent die-to-die parameter matching.

Supply support for SIGC04T60EX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SIGC04T60EX1SA2 belongs to the TRENCHSTOP™ IGBT3 bare die product line, engineered specifically for high-reliability, thermally constrained power modules in variable-speed drive and resonant power conversion systems.

FAQ

Is SIGC04T60EX1SA2 qualified for automotive applications?

No. This bare die is not qualified to AEC-Q101 or any automotive reliability standard. Infineon explicitly states in the datasheet that it is intended for industrial and consumer applications only, and warns against use in safety-critical systems where failure could cause personal injury.

What is the recommended gate resistor value for this die?

The datasheet does not specify a gate resistor value because switching behavior depends entirely on module layout, driver strength, and parasitic inductance. Designers must characterize gate loop inductance and select R_G to achieve desired dV/dt and EMI performance while staying within the 6 µs short-circuit window.

Can SIGC04T60EX1SA2 be directly bonded using conductive epoxy?

Yes-Infineon specifies electrically conductive epoxy glue as an approved die-bond method. However, thermal performance will be 20–30% lower than soft-solder or sintering due to higher interfacial thermal resistance; epoxy bonding is acceptable only in low-power-density or non-continuous-duty applications.

Does this die include an integrated anti-parallel diode?

No. SIGC04T60EX1SA2 is a single-die IGBT without an integrated freewheeling diode. External diode selection-such as ultrafast or SiC Schottky types-must be made based on commutation requirements, reverse recovery characteristics, and thermal coupling to the IGBT die in the final module.