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Infineon Technologies SIGC06T60EX1SA2
- Part No.:
- SIGC06T60EX1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
SIGC06T60EX1SA2.pdf
- Description:
- IGBT TRENCH FS 600V 10A DIE
- Quantity:
- Payment:
- Shipping:
Inventory:2,231
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Product details
Overview
SIGC06T60EX1SA2 from Infineon Technologies is a 600 V, 10 A TRENCHSTOP™ IGBT3 bare die optimized for industrial power control in discrete and module applications. It features low VCE(sat) (1.5 V typ. @ 10 A), short tail current, positive temperature coefficient for stable paralleling, and 6 µs short-circuit withstand time at 150 °C junction temperature - deployed in motor drives and resonant converters.
For engineers reviewing the SIGC06T60EX1SA2 datasheet, SIGC06T60EX1SA2 pinout, SIGC06T60EX1SA2 application, or SIGC06T60EX1SA2 equivalent, key selection criteria include VCE(sat) stability across temperature, RBSOA compliance at 600 V/20 A, gate threshold voltage (5.8 V typ.), and die-level thermal resistance constraints for die-attach integration.
Technical Context
This IGBT3 die employs trench-gate and field-stop architecture to achieve simultaneous low conduction loss and fast switching. Its 2.40 mm × 2.38 mm silicon die integrates AlSiCu frontside metallization, Ni/Ag backside metallization, and photoimide passivation - designed for conductive epoxy or soft-solder die bonding into power modules or discrete packages.
Static characteristics are wafer-tested per JEDEC JESD22-A114 at 25 °C; dynamic behavior (switching, thermal impedance, RBSOA) depends on final assembly and is not specified for bare die. Short-circuit capability is validated at VGE = 15 V, VCC = 360 V, and Tvj = 150 °C with ≤1000 events and >1 s recovery interval.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE Rating | 600 V DC - supports 400 V AC input rectified systems with 50 % voltage margin for transients |
| IC Continuous | 10 A @ Tvj max - defines maximum steady-state current before thermal derating begins |
| VCE(sat) | 1.5 V typ. @ 10 A, 15 V VGE, 25 °C - directly determines conduction loss in hard-switched topologies |
| VGE(th) | 5.8 V typ. - ensures robust noise immunity against false turn-on in noisy industrial environments |
| tsc | 6 µs @ 150 °C - enables hardware-level short-circuit protection without external desaturation detection |
| Cies | 551 pF typ. @ 25 V - impacts gate drive power and EMI in high-frequency PWM operation |
| Tvj Range | –40 to +175 °C - allows operation in sealed enclosures with limited airflow and high ambient temperatures |
Pinout & Package
Package: Bare die (no leadframe or molded package); dimensions 2.40 mm × 2.38 mm × 70 µm thick; wafer diameter 200 mm; backside metallized with Ni/Ag for solder bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Current return path for collector-emitter conduction | Large-area AlSiCu pad (size per chip drawing) - minimizes emitter inductance in parallel configurations |
| G (Gate) | Control terminal for MOS-controlled bipolar conduction | 0.27 mm × 0.27 mm Al pad - requires low-inductance gate loop layout to suppress oscillation during turn-off |
| Collector | High-side power terminal (backside contact) | Ni/Ag metallized silicon backside - must be fully wetted by solder; Ni layer retention critical for long-term bond reliability |
Key Features
| Feature | Design Value |
|---|---|
| Positive VCE(sat) tempco | Enables inherent current sharing in paralleled dies without external ballasting resistors |
| Short tail current | Reduces turn-off energy (Eoff) and di/dt-induced voltage overshoot in snubberless designs |
| Low Cres (17 pF) | Minimizes Miller effect, easing gate driver design and improving dv/dt immunity |
| RBSOA compliance | Validated at 600 V / 20 A / ≤150 °C - supports safe operation under inductive load switching |
| ESD-sensitive handling | Classified per MIL-STD-883 - mandates grounded workstations and ionized air during die placement |
Applications
| Motor Drives | Induction Cooking |
|---|---|
Use Scenario: 3-phase inverter stage in HVAC compressors and industrial servo drives operating at 8–20 kHz PWM frequency. IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration; handles 10 A RMS output current with <1.5 V conduction drop. Use Value: Low VCE(sat) and short tail current reduce total losses by ~12 % vs. IGBT2 equivalents at 15 kHz, enabling smaller heatsinks. | Use Scenario: Resonant half-bridge in 20–50 kHz induction cooktops with zero-voltage switching (ZVS) topology. IC Role / Device Role / Timing Role: High-side switch in asymmetrical ZVS converter; operates with 600 V blocking and controlled turn-off dv/dt. Use Value: Low Cres and predictable tsc allow precise dead-time tuning and reliable ZVS across line voltage range (180–264 VAC). |
| UPS Inverters | Welding Power Supplies |
Use Scenario: Output stage of online double-conversion UPS delivering clean 50/60 Hz sine wave with <3 % THD. IC Role / Device Role / Timing Role: Hard-switched IGBT in full-bridge inverter; rated for 10 A continuous and 30 A pulsed current. Use Value: 6 µs short-circuit rating enables cycle-by-cycle overcurrent shutdown without external sensing delay, meeting UL 1741 fault response requirements. | Use Scenario: Primary-side switch in IGBT-based inverter welding machines with 1–10 kHz burst-mode operation. IC Role / Device Role / Timing Role: High-current switching element handling 30 A pulsed loads with rapid duty-cycle transitions. Use Value: Positive VCE(sat) temperature coefficient ensures balanced current sharing across multiple dies in multi-chip modules used for >200 A output. |
Availability
SIGC06T60EX1SA2 is available at Aetrix Electronics and suitable for motor drives, induction cooking systems, and UPS inverters requiring stable component supply for high-volume industrial production.
Supply support for SIGC06T60EX1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.
The TRENCHSTOP™ IGBT3 product line targets cost-sensitive, high-efficiency industrial power conversion - emphasizing low-loss switching, rugged short-circuit behavior, and die-level flexibility for module integrators.
FAQ
Is SIGC06T60EX1SA2 qualified for automotive applications?
No. This bare die is not qualified to AEC-Q101 or any automotive stress test standard. Infineon explicitly states in the datasheet that it is intended for industrial power control only, and automotive use is prohibited without additional qualification and validation by the end customer.
What is the recommended die-attach method for SIGC06T60EX1SA2?
Infineon specifies electrically conductive epoxy glue or soft solder for die attachment. The Ni/Ag backside metallization requires full wetting but preservation of the Ni barrier layer - complete consumption of Ni during solder reflow risks intermetallic voiding and long-term bond fatigue failure.
Can SIGC06T60EX1SA2 be paralleled without external gate resistors?
Yes - its positive VCE(sat) temperature coefficient enables inherent current balancing. However, matched gate loop inductance and symmetrical thermal mounting are mandatory; Infineon recommends individual gate resistors (≤10 Ω) to dampen parasitic oscillation during turn-off in high-di/dt layouts.
Why are switching parameters like Eon/Eoff not specified in the datasheet?
Switching characteristics depend entirely on external circuit conditions - gate drive strength, stray inductance, bus voltage, and heatsink thermal mass. As a bare die, SIGC06T60EX1SA2's dynamic behavior is undefined until integrated into a specific module or package; those parameters must be measured at system level.
SIGC06T60EX1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 10 A
- Current - Collector Pulsed (Icm):
- 30 A
- Vce(on) (Max) @ Vge, Ic:
- 1.9V @ 15V, 10A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
SIGC06T60EX1SA2 FAQ
1.How can I place an order for SIGC06T60EX1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIGC06T60EX1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIGC06T60EX1SA2 reliable?
The price and inventory of SIGC06T60EX1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC06T60EX1SA2 is usually 5 days.
3.What payment methods are accepted for SIGC06T60EX1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC06T60EX1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIGC06T60EX1SA2?
SIGC06T60EX1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIGC06T60EX1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIGC06T60EX1SA2?
For technical support, including SIGC06T60EX1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC06T60EX1SA2 requirements.
6.How does Aetrix verify that SIGC06T60EX1SA2 is sourced from the original manufacturer or authorized distributors?
All SIGC06T60EX1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC06T60EX1SA2 meets industry standards.
7.What is the process for return or replacement of SIGC06T60EX1SA2?
All SIGC06T60EX1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC06T60EX1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIGC06T60EX1SA2 part is unused and in its original packaging.
Return procedure for SIGC06T60EX1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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