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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC07T60NCX1SA1

Name: SIGC07T60NCX1SA1
Brand: Infineon Technologies
SKU: SIGC07T60NCX1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC07T60NCX1SA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC07T60NCX1SA1.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:6,145

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Product details

Overview

SIGC07T60NCX1SA1 from Infineon Technologies is a 600 V, 6 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in motor drives and industrial inverters. It features a 2.6 × 2.6 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and V_CE(sat) = 2.0 V (typ.) at I_C = 6 A and V_GE = 15 V.

For engineers reviewing the SIGC07T60NCX1SA1 datasheet, SIGC07T60NCX1SA1 pinout (emitter/gate/collector terminals), SIGC07T60NCX1SA1 application in three-phase inverter stages, or SIGC07T60NCX1SA1 equivalent bare-die IGBTs, this page provides verified die-level specifications, thermal and switching behavior, mechanical layout, and validated alternatives for module integration.

Technical Context

This IGBT die employs Non-Punch-Through (NPT) technology with a 100 µm thick silicon substrate, enabling robust short-circuit withstand time and stable V_CE(sat) drift over temperature. Its positive temperature coefficient of V_CE(sat) ensures current sharing when paralleled without active current balancing.

Tested at T_j = 125 °C under inductive load conditions (V_CC = 300 V, I_C = 6 A, V_GE = ±15 V, R_G = 5.4 Ω), it delivers t_d(off) = 110 ns (typ.), t_f = 25 ns (typ.), and C_iss = 222 pF - parameters directly tied to gate drive design and EMI management in 10–20 kHz drive inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - maximum blocking voltage; defines use in 400 V AC input systems with 2× safety margin
I_C	6 A DC - continuous collector current at rated junction temperature; sets thermal design baseline for die attach and heatsink sizing
V_CE(sat)	2.0 V (typ.) at I_C = 6 A, V_GE = 15 V - determines conduction loss and thermal rise in hard-switched topologies
t_d(off)	110 ns (typ.) - critical for dead-time calculation and shoot-through prevention in bridge legs
C_iss	222 pF - governs gate drive power requirement and Miller effect sensitivity during switching
T_j range	−55 °C to +150 °C - supports operation in sealed industrial enclosures without forced cooling
V_GE(th)	5.5 V (typ.) - enables standard +15 V gate drive with noise margin against false turn-on

Pinout & Package

SIGC07T60NCX1SA1 is supplied as a bare die in sawn-on-foil format (Q67050-A4134-A001), with no leadframe or molded package. Die dimensions are 2.6 × 2.6 mm² (total area 6.76 mm², active area 4.3 mm²); emitter pad measures 1.11 × 1.78 mm², gate pad is 0.5 × 0.7 mm². Bonding uses Al wire ≤500 µm on Al–Si 1% emitter metallization and Ni–Ag collector metallization.

Pin/Terminal	Circuit Role	Design Meaning
Emitter (E)	Low-side reference terminal for gate drive and current sensing	1.11 × 1.78 mm² Al–Si pad; compatible with epoxy or soft-solder die attach; primary current return path
Gate (G)	Control electrode for MOS-controlled bipolar conduction	0.5 × 0.7 mm² pad; requires low-inductance gate loop to minimize oscillation during dV/dt > 5 kV/µs
Collector (C)	High-voltage power terminal and heat-sinking surface	Ni–Ag metallized backside; serves as thermal interface to baseplate; electrically isolated only via substrate thickness

Key Features

Feature	Design Value
NPT silicon technology	Enables rugged short-circuit capability (>10 µs at 125 °C) without desaturation protection circuitry
Positive V_CE(sat) tempco	Permits stable current sharing across multiple dies in parallel-connected modules without external ballasting resistors
100 µm die thickness	Optimizes trade-off between breakdown voltage, saturation voltage, and switching speed for 600 V class
Photoimide passivation	Provides humidity resistance and mechanical protection during die handling and wire bonding
Al–Si 1% emitter metallization	Ensures low contact resistance and reliable thermocompression bonding with Al wire ≤500 µm

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase 400 V AC input inverter stage driving 0.75–2.2 kW induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: High-side and low-side switch in 6-pulse IGBT bridge; operates at 8–16 kHz PWM frequency with fixed dead-time control.

Use Value: Low V_CE(sat) reduces conduction loss by ~1.2 W per device at full load, improving system efficiency from 94.1% to 94.8%.

Use Scenario: Online double-conversion UPS with bidirectional inverter/rectifier stage for 3 kVA backup systems.

IC Role / Device Role / Timing Role: Inverter-side switching element; handles 50/60 Hz fundamental plus harmonic content up to 1 kHz.

Use Value: Stable t_d(off) and t_f ensure consistent zero-crossing timing accuracy (<±0.5 µs variation) across temperature, preserving output waveform THD < 2.5%.

Solar String Inverters

Welding Power Supplies

Use Scenario: DC–AC stage in single-phase transformerless string inverters with 600 V DC input and 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge leg switch; commutated at 16–20 kHz with unipolar modulation to reduce filter size.

Use Value: C_iss = 222 pF allows gate driver IC (e.g., 1ED020I12FA) to achieve <100 ns rise/fall without overshoot, minimizing EMI emissions in Class B compliance testing.

Use Scenario: Primary-side inverter in IGBT-based inverter welding machines delivering 200 A DC output at 30 V.

IC Role / Device Role / Timing Role: Hard-switched chopper operating at 15–25 kHz with 50% duty cycle and high di/dt (>500 A/µs).

Use Value: Positive V_CE(sat) tempco prevents thermal runaway during repetitive short-circuit events (e.g., arc initiation), extending mean time between failures by 3.2× vs. PT-type dies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRGB14C60LDPBF	600 V, 14 A, PT technology; higher I_C, lower V_CE(sat) (1.8 V), but negative tempco	Requires active current balancing in parallel configurations; unsuitable for direct replacement without gate drive redesign	Select only when higher current rating is mandatory and thermal derating allows safe paralleling
IXYS IXGN75N60B3	600 V, 75 A discrete TO-247 packaged IGBT; includes integrated anti-parallel diode; not a bare die	Used in PCB-mount designs rather than module assembly; incompatible with press-pack or solder-bonded module substrates	Choose only for prototyping or low-volume board-level inverters where module integration is not required

Compared with IRGB14C60LDPBF and IXGN75N60B3, SIGC07T60NCX1SA1 offers superior thermal stability in multi-die modules and direct compatibility with industry-standard press-fit and solder-bonding processes - making it optimal for high-reliability, volume-manufactured IGBT modules targeting industrial drives.

Availability

SIGC07T60NCX1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar string inverters, and welding power supplies requiring stable component supply and long-term module production continuity.

Supply support for SIGC07T60NCX1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with core expertise in high-voltage and high-efficiency power conversion.

SIGC07T60NCX1SA1 belongs to Infineon's legacy NPT IGBT die portfolio, engineered specifically for integration into custom and standard IGBT modules used in industrial variable-frequency drives and medium-power energy conversion systems.

FAQ

Is SIGC07T60NCX1SA1 supplied with solderable or conductive-epoxy-compatible metallization?

Yes. The emitter uses 3200 nm Al–Si 1% metallization and the collector uses 1400 nm Ni–Ag, both qualified for soft-solder die attach (SnPb or Pb-free) and electrically conductive epoxy bonding. The Ni–Ag backside enables reliable thermal and electrical interface to copper or DBC substrates without additional plating.

What is the maximum recommended gate resistor value for reliable switching at 15 kHz?

At 15 kHz with V_GE = ±15 V and T_j = 125 °C, R_G must not exceed 5.4 Ω to maintain t_d(off) ≤ 110 ns and t_f ≤ 25 ns. Higher values increase switching losses and risk cross-conduction; lower values require gate driver peak current ≥3 A to avoid undershoot.

Can SIGC07T60NCX1SA1 be used in avalanche mode?

No. This NPT IGBT die is not rated for repetitive avalanche operation. Its V_(BR)CES = 600 V is a DC blocking rating only; no energy-rated avalanche SOA is specified. System-level overvoltage protection (e.g., RC snubbers or clamping diodes) must be implemented externally.

Does the die include an integrated freewheeling diode?

No. SIGC07T60NCX1SA1 is a standalone NPT IGBT die with no monolithically integrated diode. Module integrators must bond a separate ultrafast recovery diode (e.g., IDH08SG60C) in anti-parallel configuration or select a dual-die substrate layout to enable bidirectional current flow.

SIGC07T60NCX1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 6A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 6A, 54Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC07T60NCX1SA1 FAQ

1.How can I place an order for SIGC07T60NCX1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC07T60NCX1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC07T60NCX1SA1 reliable?

The price and inventory of SIGC07T60NCX1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC07T60NCX1SA1 is usually 5 days.

3.What payment methods are accepted for SIGC07T60NCX1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC07T60NCX1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC07T60NCX1SA1?

SIGC07T60NCX1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC07T60NCX1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC07T60NCX1SA1?

For technical support, including SIGC07T60NCX1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC07T60NCX1SA1 requirements.

6.How does Aetrix verify that SIGC07T60NCX1SA1 is sourced from the original manufacturer or authorized distributors?

All SIGC07T60NCX1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC07T60NCX1SA1 meets industry standards.

7.What is the process for return or replacement of SIGC07T60NCX1SA1?

All SIGC07T60NCX1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC07T60NCX1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC07T60NCX1SA1 part is unused and in its original packaging.

Return procedure for SIGC07T60NCX1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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