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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies SIGC07T60NCX1SA4

Name: SIGC07T60NCX1SA4
Brand: Infineon Technologies
SKU: SIGC07T60NCX1SA4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIGC07T60NCX1SA4

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: Die

Datasheet:: SIGC07T60NCX1SA4.pdf

Description:: IGBT 3 CHIP 600V WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:4,672

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Product details

Overview

SIGC07T60NCX1SA4 from Infineon Technologies is a 600 V, 6 A NPT (Non-Punch-Through) IGBT die in bare-die format, designed for high-voltage switching in motor drives and industrial inverters. It features a 2.6 × 2.6 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable parallel operation, and 2.0 V typical V_CE(sat) at 6 A/15 V_GE.

For engineers reviewing the SIGC07T60NCX1SA4 datasheet, SIGC07T60NCX1SA4 pinout (emitter/gate/collector terminals), SIGC07T60NCX1SA4 application in three-phase inverter stages, or SIGC07T60NCX1SA4 equivalent bare-die IGBTs, this page provides verified die-level specifications, thermal and switching behavior, package-independent mounting guidance, and validated alternatives for module integration.

Technical Context

This NPT-technology IGBT die operates with a gate-emitter threshold voltage of 4.5–6.5 V and exhibits low dynamic losses: t_d(off) = 110 ns and t_f = 25 ns under 300 V, 6 A, T_j = 125 °C conditions. Its 222 pF input capacitance and 20 pF reverse transfer capacitance support predictable gate drive design.

The die uses Al–Si (1%) emitter metallization (3200 nm) and Ni–Ag collector metallization (1400 nm), enabling compatibility with both epoxy and soft-solder die bonding. Photoimide passivation ensures frontside reliability under high dv/dt stress in hard-switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage; defines use in 400 V AC input systems with 2× safety margin
I_C	6 A DC - Continuous current rating at T_jmax; sets thermal design baseline for heatsink sizing
V_CE(sat)	2.0 V typ. @ 6 A, 15 V_GE - Directly determines conduction loss (12 W max at full load)
t_d(off) + t_f	135 ns typ. - Total turn-off interval; constrains maximum switching frequency to ≤30 kHz for thermal stability
T_j range	−55 to +150 °C - Enables operation in sealed industrial enclosures without active cooling
C_iss	222 pF - Defines gate charge requirement (~22 nC estimated); informs gate driver peak current selection
Die size	2.6 × 2.6 mm² - Physical footprint for layout planning in custom module substrates or DBC carriers

Pinout & Package

SIGC07T60NCX1SA4 is supplied as an unmounted bare die in sawn-on-foil format (Q67050-A4134-A001), with no leadframe or molded package. Terminal identification follows standard IGBT die layout: central emitter pad (1.11 × 1.78 mm²), corner gate pad (0.5 × 0.7 mm²), and perimeter collector metallization.

Pin/Terminal	Circuit Role	Design Meaning
Emitter pad	Low-side current return path	Al–Si metallized surface; requires low-inductance bond wire or solder connection to emitter node
Gate pad	Control electrode	Small-area (0.5 × 0.7 mm²) terminal; mandates short, low-L gate loop to avoid oscillation
Collector metallization	High-voltage power input	Ni–Ag system covering die backside and edge; enables solder or conductive-epoxy attachment to DBC substrate

Key Features

Feature	Design Value
Positive temperature coefficient	Enables stable current sharing when paralleling multiple dies without external current-balancing resistors
NPT technology	Provides soft, controllable turn-off with reduced tail current-critical for reducing EMI in variable-speed drives
100 µm thin wafer	Optimizes switching speed while maintaining rugged short-circuit withstand capability (≥10 µs)
Photoimide passivation	Withstands >5 kV/µm electric field strength; prevents surface leakage during high dv/dt commutation
Al–Si emitter / Ni–Ag collector	Supports both thermosonic wire bonding (Al) and high-reliability solder die attach (Ni–Ag wettability)

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 0.75 kW HVAC compressor drive operating at 16 kHz PWM.

IC Role / Device Role / Timing Role: High-side IGBT switch in leg configuration; handles 300 V DC bus with 6 A RMS output current.

Use Value: 2.0 V V_CE(sat) limits conduction loss to <12 W per device, enabling compact heatsink design without forced air.

Use Scenario: DC–AC inverter bridge in online double-conversion UPS delivering 1 kVA with THD <3%.

IC Role / Device Role / Timing Role: Low-inductance switching element in H-bridge; commutates 300 V DC link into 230 V AC output.

Use Value: 135 ns total turn-off time supports clean square-wave synthesis up to 20 kHz, minimizing harmonic filter size.

Solar Microinverters

Induction Heating Systems

Use Scenario: Full-bridge inverter in 300 W residential microinverter interfacing 30–60 V PV string to 230 V grid.

IC Role / Device Role / Timing Role: Synchronous switching device in phase-shifted topology; operates at 40–100 kHz with zero-voltage switching assist.

Use Value: Positive temperature coefficient allows direct paralleling of two dies per switch position, doubling current capacity without imbalance risk.

Use Scenario: Half-bridge resonant inverter in 5 kW domestic induction cooktop operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Hard-switched power switch handling 400 V DC link and 15 A peak load current.

Use Value: 100 µm NPT die structure sustains 10 µs short-circuit capability-critical for surviving transient overloads during pan detection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N60B3	600 V / 75 A discrete TO-247 packaged IGBT; higher current rating but larger footprint and fixed package parasitics	Used in PCB-mounted half-bridge modules; not suitable for custom DBC-based multi-die layouts	Select when rapid prototyping on standard PCBs is required, not for high-density module integration
STMicroelectronics STGP7NC60HD	600 V / 7 A planar NPT die in TO-220FP package; lower V_CE(sat) (1.6 V) but smaller active area and no collector metallization for solder bonding	Targeted at low-cost consumer inverters; lacks Ni–Ag collector for high-reliability die attach	Choose for cost-sensitive single-die applications where solder-bonded collector is unnecessary

Compared with IXGN75N60B3 and STGP7NC60HD, SIGC07T60NCX1SA4 uniquely delivers bare-die flexibility, Ni–Ag collector metallization for robust die bonding, and proven 10 µs short-circuit ruggedness-making it optimal for custom high-power module assembly rather than off-the-shelf replacement.

Availability

SIGC07T60NCX1SA4 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and induction heating systems requiring stable component supply and long-term module production continuity.

Supply support for SIGC07T60NCX1SA4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global R&D and fabrication facilities.

SIGC07T60NCX1SA4 belongs to Infineon's high-voltage NPT IGBT die portfolio, engineered specifically for integration into custom power modules targeting industrial drive and energy conversion applications demanding high reliability and thermal scalability.

FAQ

Is SIGC07T60NCX1SA4 supplied with a leadframe or molded package?

No. SIGC07T60NCX1SA4 is a bare die in sawn-on-foil format (Q67050-A4134-A001), with no leadframe, encapsulation, or terminals beyond the emitter, gate, and collector metallized surfaces. It requires die-attach and wire-bonding or solder interconnection by the end user during module assembly.

What is the recommended gate resistor value for this IGBT die?

A 5 Ω gate resistor is specified in the datasheet for switching characterization (t_d(off), t_f). For actual designs, gate resistance must be selected based on system requirements: lower values (3–5 Ω) reduce switching losses but increase EMI; higher values (10–22 Ω) improve noise immunity at the cost of increased t_f and conduction loss trade-off.

Can SIGC07T60NCX1SA4 be used in parallel configurations?

Yes. Its positive temperature coefficient of V_CE(sat) ensures inherent current balancing across multiple dies under thermal stress. Successful parallel operation requires matched gate drive paths, symmetrical layout, and uniform die mounting pressure to minimize thermal gradient-induced imbalance.

Does this die support short-circuit withstand capability?

Yes. As an NPT IGBT, SIGC07T60NCX1SA4 maintains safe operation for ≥10 µs under short-circuit conditions at rated V_CE and T_j = 125 °C, provided gate voltage remains at 15 V. This capability is validated per Infineon's internal test protocol and is critical for drive fault protection schemes.

SIGC07T60NCX1SA4 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Obsolete

IGBT Type:: NPT

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 6 A

Current - Collector Pulsed (Icm):: 18 A

Vce(on) (Max) @ Vge, Ic:: 2.5V @ 15V, 6A

Power - Max:: -

Switching Energy:: -

Input Type:: Standard

Gate Charge:: -

Td (on/off) @ 25°C:: 21ns/110ns

Test Condition:: 300V, 6A, 54Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Die

SIGC07T60NCX1SA4 FAQ

1.How can I place an order for SIGC07T60NCX1SA4 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIGC07T60NCX1SA4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIGC07T60NCX1SA4 reliable?

The price and inventory of SIGC07T60NCX1SA4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIGC07T60NCX1SA4 is usually 5 days.

3.What payment methods are accepted for SIGC07T60NCX1SA4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIGC07T60NCX1SA4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIGC07T60NCX1SA4?

SIGC07T60NCX1SA4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIGC07T60NCX1SA4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIGC07T60NCX1SA4?

For technical support, including SIGC07T60NCX1SA4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIGC07T60NCX1SA4 requirements.

6.How does Aetrix verify that SIGC07T60NCX1SA4 is sourced from the original manufacturer or authorized distributors?

All SIGC07T60NCX1SA4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIGC07T60NCX1SA4 meets industry standards.

7.What is the process for return or replacement of SIGC07T60NCX1SA4?

All SIGC07T60NCX1SA4 units undergo pre-shipment inspection (PSI). If there is an issue with SIGC07T60NCX1SA4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIGC07T60NCX1SA4 part is unused and in its original packaging.

Return procedure for SIGC07T60NCX1SA4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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