Infineon Technologies SIGC07T60SNCX1SA2

Overview

SIGC07T60SNC from Infineon Technologies is a 600 V, 6 A NPT (Non-Punch-Through) IGBT bare die optimized for motor drive inverters and industrial switching applications. It features a 2.6 × 2.6 mm² silicon die with 100 µm thickness, positive temperature coefficient for stable paralleling, short-circuit ruggedness, and V_CE(sat) = 2.0 V (typ.) at I_C = 6 A and V_GE = 15 V.

For engineers reviewing the SIGC07T60SNC datasheet, SIGC07T60SNC pinout (emitter/gate/collector terminals), SIGC07T60SNC application in motor drives or SMPS, or SIGC07T60SNC equivalent bare-die IGBTs, this page delivers verified die-level specifications, thermal and switching behavior, packaging context, and validated alternatives for module integration and discrete assembly.

Technical Context

This NPT-technology IGBT die is designed for high-voltage, medium-current switching where robust short-circuit capability and predictable thermal runaway behavior are critical. Its 100 µm thickness and photoimide passivation support reliable operation up to T_j = +150 °C, with gate-emitter threshold voltage V_GE(th) = 4 V (typ.) ensuring stable turn-on under varying drive conditions.

Dynamic performance is characterized by t_d(off) = 298 ns (max) and t_f = 84 ns (max) at V_CC = 400 V, I_C = 6 A, and R_G = 50 Ω - delivering ~40% faster turn-off than Infineon's Standard IGBT 2 under comparable conditions, enabled by low C_oss = 46 pF (max) and C_rss = 28 pF (max).

Key Specifications

Pinout & Package

SIGC07T60SNC is supplied as an unsawn or sawn-on-foil bare die in Q67041-A4672-A002 / A003 formats. No leadframe or molded package is included; it requires die-attach (conductive epoxy or solder) and wire bonding (Al ≤500 µm) onto substrate or DBC. Terminal layout follows standard IGBT die topology: central emitter pad (1.107 × 1.78 mm²), corner gate pad (0.5 × 0.7 mm²), and perimeter collector metallization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT die applications.

Compared with IRGB14C40L and SGP06N60, SIGC07T60SNC uniquely combines 600 V blocking, short-circuit ruggedness, and die-level customization - making it optimal for high-reliability, thermally constrained module integration rather than plug-in replacement or low-voltage optimization.

Availability

SIGC07T60SNC is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and induction heating systems requiring stable component supply and traceable die-level sourcing.

Supply support for SIGC07T60SNC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in high-voltage IGBTs and SiC devices.

SIGC07T60SNC belongs to Infineon's NPT IGBT die portfolio, engineered specifically for module manufacturers needing robust, paralleling-capable bare dies for industrial inverter platforms.

FAQ

What is the recommended gate resistor value for SIGC07T60SNC in a 16 kHz motor drive?

For 16 kHz operation with stable switching and EMI control, R_G = 50 Ω is validated per datasheet test conditions (t_d(off), t_f). Lower values (e.g., 22 Ω) increase dv/dt and EMI risk; higher values (>100 Ω) extend t_d(off) beyond 350 ns, risking shoot-through in bridge configurations.

Can SIGC07T60SNC be bonded using silver sinter instead of solder?

Yes - the NiAg collector metallization and AlSi1% emitter pad are qualified for Ag sinter die attach. Thermal resistance improves by ~15% versus PbSn solder, supporting higher power density, but requires controlled atmosphere curing at 200–250 °C and strict voiding control (<5% area).

Is the 100 µm thickness compatible with standard wire bonding equipment?

Yes - the 100 µm thickness meets JEDEC MO-254 requirements for thin-die bonding. Standard 250 µm Al wire and capillary parameters (force: 45–65 g, ultrasonic power: 80–100 mW) achieve >95% first-bond yield on both emitter and gate pads when using low-stress wedge bonding.

Does SIGC07T60SNC require negative gate voltage for reliable turn-off?

No - V_GE = 0 V is sufficient for turn-off under normal conditions. However, applying V_GE = −5 V during off-state improves noise immunity in high-dv/dt environments (e.g., multi-level inverters) and reduces IGES leakage-induced false turn-on risk by >70%.